WiDy SenS Lin/Log Gated InGaAs
Description
InGaAs, i.e. indium gallium arsenide, is an alloy of gallium arsenide and indium arsenide. InGaAs sensors have a high sensitivity in the infrared region, ranging from 950 nm to 1700 nm, allowing users to detect photons invisible to the human eye.
WiDy SenS Lin/Log Gated InGaAs
Specifications |
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|---|---|
| Camera Type: | Industrial, Security, Military |
| Array Type: | InGaAs |
| Spectral Band: | 0.95-1.7um |
| # Pixels (Height): | 640 |
| # Pixels (Width): | 512 |
| Pixel Pitch: | 15 um |
| Array Cooling: | Cooled |
Features
Low SWap InGaAs camera
Linear mode for sensitivity (50e- readout noise)
Logarithmic mode for dynamic range (>120dB)
High shutter efficiency with 100 ns min exposure
TEC1 cooling
640 x 512 with 15µm pixel pitch
ITAR-free
Applications
Active Imaging
Laser Beam profiling
Metrology (microscopy, hyperspectral)
Process control (industry, semiconductors, food, …)
Defence and security
Airborne cameras (UAV)
For pricing, technical or any other questions please contact the supplier
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
since 2020
Frequently Asked Questions
The applications of WiDy SenS Lin/Log Gated InGaAs include active imaging, laser beam profiling, metrology (microscopy, hyperspectral), process control (industry, semiconductors, food, …), defence and security, and airborne cameras (UAV).
The features of WiDy SenS Lin/Log Gated InGaAs include low SWap InGaAs camera, linear mode for sensitivity, logarithmic mode for dynamic range, high shutter efficiency with 100 ns min exposure, TEC1 cooling, and 640 x 512 with 15µm pixel pitch.
InGaAs is an alloy of gallium arsenide and indium arsenide that has a high sensitivity in the infrared region.
The power consumption of WiDy SenS Lin/Log Gated InGaAs is < 2,5W (TEC OFF) and < 4W (TEC ON) in standard mode, and < 4W in gated mode.
The resolution of WiDy SenS Lin/Log Gated InGaAs is 640(H)x512(V) with a pixel pitch of 15µm.