FAST SDD 25mm Ultra High Performance Silicon Drift Detector
Description
Unlike our conventional SDDs which use a junction gate field-effect transistor (JFET) inside the hermetically sealed TO-8 package, along with an external preamplifier, the FAST SDD uses a complementary metal-oxide-semiconductor (CMOS) preamplifier inside the TO-8 package, and replaces the JFET with a metal-oxide-semiconductor field-effect transistor (MOSFET). This significantly reduces capacitance, providing much lower series noise and yielding improved resolution at very short peaking times. The FAST SDD® uses the same detector but with a preamplifier giving lower noise at short peaking times. Improved (lower) resolution enables isolation/separation of fluorescent X-rays with close energy values where peaks would otherwise overlap, permitting users better identification all of the elements in their sample(s). Short peaking times also yield significant improvements in count rates; more counts provide better statistics.
FAST SDD 25mm Ultra High Performance Silicon Drift Detector
Specifications |
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|---|---|
| Active Area (horizontal): | 25 mm |
| Active Area (vertical): | 17 mm |
| Image Resolution (actual): | -- lp/mm |
| Image Size (horizontal): | -- Pixels |
| Image Size (vertical): | -- Pixels |
| Image Size (vertical): | -- Pixels |
| Pixel Size (square): | -- um |
Features
25 mm2 active area collimated to 17 mm2
Also available 70 mm2 collimated to 50 mm2
122 eV FWHM resolution at 5.9 keV
Count rates > 1,000,000 CPS
High peak-to-background ratio – 26,000/1
Preamplifier Output Rise Time <35 ns
Windows: Be (0.5 mil) 12.5 μm, or C Series (Si3N4)
Radiation hard
Detector thickness 500 μm
TO-8 Package 25 mm2 FAST SDD®
Cooling ΔT>85 K
Multilayer Collimator
Applications
Ultra-fast benchtop and handheld XRF analyzers
Scanning/mapping of samples in an SEM as part of an EDS system
On-line process control
X-Ray Sorting Machines
OEM
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Frequently Asked Questions
The FAST SDD uses a CMOS preamplifier and MOSFET instead of a JFET, resulting in lower capacitance and improved resolution at short peaking times.
The FAST SDD has a 25 mm2 active area collimated to 17 mm2, 122 eV FWHM resolution at 5.9 keV, count rates over 1,000,000 CPS, and a high peak-to-background ratio of 26,000/1.
The FAST SDD is suitable for ultra-fast benchtop and handheld XRF analyzers, scanning/mapping of samples in an SEM, on-line process control, and X-Ray Sorting Machines.
The improved resolution of the FAST SDD allows for isolation/separation of fluorescent X-rays with close energy values, preventing peak overlap and enabling better identification of elements.
The FAST SDD has lower noise, lower leakage current, better charge collection, and uniformity from detector to detector, making it the best performing silicon drift detector available.