FILTER PRODUCTS

to
to

CW Semiconductor Lasers

Low noise tunable laser for sensing and scientific applications. Based on telecom platform, with high volume production and inherent quality control and reliability. Optimized firmware and electronics design ensures suitability for highest demanding applications and provides alternative to high-cost single-wavelength solutions for ...

Specifications

Center Wavelength: 1.550 um
Output Power: 40 mW
DML -XX series of analog broadband direct-tuning transmitters use a highly linear microwave direct-coupled DFB laser (DML), a fully transparent operating mode without RF drive amplifiers and integrated automatic power control (APC) and automatic temperature control (ATC) circuit to ensures that the laser can transmit up to 18 GHz of ...

Specifications

Center Wavelength: 1530 um
Output Power: 10 mW
The M15 EEL Laser Module (405nm | 150mW) is a state-of-the-art laser device designed for precision and versatility. It incorporates an APC circuit that ensures unwavering light output power, setting it apart as a premium adjustable focus module. Depending on the unique demands of your site conditions, this module offers unparalleled ...

Specifications

Center Wavelength: 0.405 um
Output Power: 150 mW
CW Optical Power: 150 mW
Operating Current: 120 mA
Monitor Current (Iop=120mA): 0.85 mA
The M15 EEL Laser Module (638nm | 100mW) is a state-of-the-art laser device designed for precision and versatility. It incorporates an APC circuit that ensures unwavering light output power, setting it apart as a premium adjustable focus module. Depending on the unique demands of your site conditions, this module offers unparalleled ...

Specifications

Center Wavelength: 0.638 um
Output Power: 100 mW
CW Optical Power: 100 mW
Operating Current: 200 mA
Operating Voltage: 5 V
The M15 EEL Laser Module (450nm | 0.75mW) is a state-of-the-art laser device designed for precision and versatility. It incorporates an APC circuit that ensures unwavering light output power, setting it apart as a premium adjustable focus module. Depending on the unique demands of your site conditions, this module offers unparalleled ...

Specifications

Center Wavelength: 0.450 um
Output Power: 0.75 mW
CW Optical Power: 0.75 mW
Operating Current: 50 mA
Operating Voltage: 24 V
Our laser modules are tailored to your unique needs, offering a versatile spectrum of wavelengths from vivid red, green, and blue to even invisible light. Catering to a vast array of applications - be it ranging, positioning, PM2.5 detection, or 3D printing - we've got a product that fits your requirements. At LECC, we don't just ...

Specifications

Center Wavelength: 0.405 um
Output Power: 50 mW
CW Optical Power: 50 mW
Operating Current: 200 mA
Operating Voltage: 5 V
The Motorized Focal Length Laser Module M18 AP45600001 offers unparalleled flexibility and precision, supported by APC and TEC temperature control feedback circuits. With this module, users can effortlessly adjust the focal length, power, wavelength, and temperature through intuitive software settings, ensuring precise application ...

Specifications

Center Wavelength: 0.45 um
Output Power: 0~70 mW
CW Optical Power: 70 mW
Operating Current: 20 mA
Operating Voltage: 6 V
Unveiling the future of laser technology with the SMD Laser Module AD65040009. Standing out in its class, it's the industry's most compact laser module, radiating at 650nm with a power of 4mW. This pioneering module challenges past laser stereotypes, offering unparalleled compactness without compromising on optical ...

Specifications

Center Wavelength: 0.65 um
Output Power: 4 mW
CW Optical Power: 2.5 mW
Operating Current: 17 mA
Operating Voltage: 2.2 V
Boasting a compact design at 3.4x3.3mm, this 650nm wavelength laser diode is ideal for lightweight and space-efficient applications. With a powerful 3.5mW optical output, its Surface Mount Device (SMD) welding construction is primed for seamless integration in automated production processes, enhancing productivity by minimizing ...

Specifications

Center Wavelength: 0.65 um
Output Power: 3.5 mW
Threshold Current: 12 mW
Operating Current: 17 mA
Operating Voltage: 2.2 V
Introducing the EEL M8 Laser Module (650nm | 0.55~0.75mW) - the epitome of precision and efficiency in the world of industrial laser technology. With a focus on delivering a consistent and stable light quality, this module ensures unparalleled light uniformity. Its uniquely designed short focal length optimizes mechanism space, ...

Specifications

Center Wavelength: 0.65 um
Output Power: 0.55~0.75 mW
CW Optical Power: 0.6 mW
Operating Current: 22 mA
Operating Voltage: 5 V
The EEL M10 module features a 650nm diode laser that boasts an aluminum anode appearance treatment. This ensures scratch resistance, corrosion resistance, and high voltage resistance. With a wide operating voltage range and 2.5mW power output, it offers superior heat dissipation, resulting in an extended laser life. Designed with ...

Specifications

Center Wavelength: 0.65 um
Output Power: 1.8~2.5 mW
CW Optical Power: 1.8 mW
Operating Current: 35 mA
Operating Voltage: 3 V
Discover the unparalleled performance of our 650nm diode laser module, EEL M12. Renowned for its superior heat dissipation, this module is powered by an advanced APC circuit ensuring a consistently stable optical power output. With a sturdy structure crafted from a high-quality aluminum anode finish, this laser module not only boasts ...

Specifications

Center Wavelength: 0.65 um
Output Power: 1~2 mW
CW Optical Power: 1 mW
Operating Current: 200 mA
Operating Voltage: 3 V
The DWDM Butterfly Laser Module RZLD-1562.23-10-BP-FA-14 is a high-quality, high-power DFB laser diode with a butterfly package that's perfect for optical transmitter systems. With a built-in thermo-electric cooler (TEC), this laser diode is able to function properly in a variety of environments. This laser module features high ...

Specifications

Center Wavelength: 1.562 um
Output Power: 5 mW
Optical Isolation (optional): 35 dB
Spectral Width (-20 DB): 0.1 to 1 nm
Wavelength Temperature Coefficient: 0.08 to 0.12 nm/degC
The 808L-1XA CW version is a 808nm low noise diode laser with up to 110mW output power. This NIR laser module comes standard with internal voltage up-conversion that allows a 5V power supply while maintaining low noise operation. The monolithic design of these laser diode modules features thermally stabilized optics in a hermetically ...

Specifications

Center Wavelength: 808 um
Output Power: 110 mW
The 785L-1XA CW version is a 785nm low noise diode laser with up to 170mW output power. This NIR laser module comes standard with internal voltage up-conversion that allows a 5V power supply while maintaining low noise operation. The monolithic design of these laser diode modules features thermally stabilized optics in a hermetically ...

Specifications

Center Wavelength: 785 um
Output Power: 170 mW
This 780nm red diode laser produces 1200mW from a 50um emitter in the free space packages or 960mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.780 um
Output Power: 960 mW
This 1550nm red diode laser produces 1000mW from a 60um emitter in the free space packages or 800mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 1.550 um
Output Power: 800 mW
The LDX-XXXX-885 is a high-power multimode laser diode designed to provide reliable and efficient laser performance at a wavelength of 885nm. This laser diode offers a wide range of output power options, with up to 6000mW in free space and up to 4800mW when used with fiber optics. It boasts high output power and dynamic range, ...

Specifications

Center Wavelength: 0.885 um
Output Power: 2500 mW
Operating Temperature: 25 °C
Threshold Current: 200 mA
Operating Current: 2500 mA
The LDX-XXXX-860 is a versatile multimode laser diode with a wavelength of 860nm. It offers high output power and dynamic range, making it suitable for a wide range of applications. Custom packaging options are available, and custom wavelengths and laser designs can be accommodated upon request.

Specifications

Center Wavelength: 0.860 um
Output Power: 4000 mW
Operating Temperature: 25 °C
Threshold Current: 575 mA
Operating Current: 3900 mA

Frequently Asked Questions

Facet coating is a technique used to reduce the reflectivity of the laser cavity's end facets, which can cause optical feedback and degrade the laser's performance. By applying a thin layer of anti-reflective coating to the facets, the reflectivity can be minimized, resulting in higher output powers, better beam quality, and improved reliability.

Temperature and current are critical parameters that can affect the performance and lifetime of CW semiconductor lasers. High operating temperatures can cause degradation and failure of the laser due to increased thermal stress, while high currents can lead to increased heating, decreased efficiency, and premature aging. Careful control of temperature and current is essential for optimizing the performance and reliability of CW semiconductor lasers.

Yes, CW diode lasers are commonly used in medical and scientific applications, including biomedical imaging, microscopy, and spectroscopy. Their high efficiency, compact size, and ease of integration make them well-suited for these applications, where precise and reliable performance is critical.

Wavelength stabilization is a technique used to stabilize the output wavelength of CW semiconductor lasers by using a feedback mechanism to compensate for changes in temperature or current. This results in a more stable and consistent output wavelength, which is critical for applications such as optical communications and spectroscopy.

Quantum well design is a technique used to improve the efficiency and output power of CW semiconductor lasers by using a series of ultra-thin semiconductor layers to confine the electrons and holes in the laser's active region. This results in a higher gain, lower threshold current, and reduced heating, which can improve the laser's performance and lifetime.

Distributed feedback (DFB) lasers are a type of CW semiconductor laser that use a grating structure to provide feedback for the laser cavity. This results in a single-mode output with high spectral purity and narrow linewidth. DFB lasers are widely used in optical communications and sensing applications, where stable and precise performance is critical.

External modulation is a technique used to improve the performance of CW diode lasers by modulating the input signal externally, rather than directly modulating the laser itself. This can improve the laser's bandwidth, reduce noise, and enable higher data rates in optical communications and data networking applications.

Gain-switched lasers are a type of CW semiconductor laser that use a pulsed current to achieve a high peak power output. They offer several advantages over other types of CW semiconductor lasers, including higher peak powers, faster rise times, and lower costs. Gain-switched lasers are used in a variety of applications, including range finding, LIDAR, and materials processing.

There are 937 different CW Semiconductor Lasers from suppliers and manufacturers listed in this category. In just a few clicks you can compare different CW Semiconductor Lasers with each other and get an accurate quote based on your needs and specifications. Please note that the prices of CW Semiconductor Lasers vary significantly for different products based on various factors including technical parameters, features, brand name, etc. Please contact suppliers directly to inquire about the details and accurate pricing information for any product model. Simply navigate to the product page of interest and use the orange button to directly reach out to the respective supplier with one click.

Did You know?

The first useful semiconductor laser was made by R.N. Hall in 1962 which was composed of GaAs materials that emitted in near infrared at 0.8 µm. The semiconductor laser is similar to transistor, has the appearance of a LED but the output beam has the characteristics of a laser. The application that was the main driving force in the development of semiconductor lasers was in the field of long distance communications but at this moment the use of this laser in compact disc players constitutes their largest single market. Using semiconductor laser gives an advantage of low power consumption requirements.