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CW Semiconductor Lasers

High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The ...

Specifications

Center Wavelength: 0.750 um
Output Power: 20000 mW
CM808DL10 is a high-quality C-mount package laser diode, which Fabry-Perot laser based on state-of-the-art, quantum-well epitaxial layer growth and reliable ridge waveguide structure.    CM808DL5/CM808DL10 is easy to mount and provides good thermal contact, making it an ideal choice for high power and OEM ...

Specifications

Center Wavelength: 0.808 um
Output Power: 10000 mW
Operating Current Iop: 5 A
Threshold Current Ith: 0.3 A
Operating Voltage Vop: 2 V
The Matchbox series of laser diode modules offer excellent performance and reliability in an ultra-compact “all-in-one” driver integrated laser head. The 520L-1XA CW version is a 520nm low noise diode laser with up to 80mW output power. This green laser module comes standard with internal voltage up-conversion that allows ...

Specifications

Center Wavelength: 0.520 um
Output Power: 80 mW
The 785L-1XA CW version is a 785nm low noise diode laser with up to 170mW output power. This NIR laser module comes standard with internal voltage up-conversion that allows a 5V power supply while maintaining low noise operation. The monolithic design of these laser diode modules features thermally stabilized optics in a hermetically ...

Specifications

Center Wavelength: 0.785 um
Output Power: 170 mW
The 808L-1XA CW version is a 808nm low noise diode laser with up to 110mW output power. This NIR laser module comes standard with internal voltage up-conversion that allows a 5V power supply while maintaining low noise operation. The monolithic design of these laser diode modules features thermally stabilized optics in a hermetically ...

Specifications

Center Wavelength: 0.808 um
Output Power: 110 mW
UV Laser Diode in with 300mW in a TO18 (5.6mm) package. 

Specifications

Center Wavelength: 0.395 um
Output Power: 300 mW
The SDL-488-LM-XXXT is a compact and reliable blue diode laser, producing high-quality laser output at 488nm wavelength. With single mode LD mode and near TEM00 beam spot outline, it provides stable and accurate performance for a wide range of applications in research, industry, and medical fields. The laser also features a TTL ...

Specifications

Center Wavelength: 0.488 um
Output Power: 1 - 50 mW
LD Mode: Single Mode
Operation Mode: CW
Power Stability: < 5 %
The SDL-680-LM-XXXT is a high-performance red diode laser emitting at 680nm with an output power of 1-1000mW. It features TTL modulation and customizable options such as power stability, analog modulation, line output versions, and detachable fiber-coupled systems. The SDL-680-LM-XXXMFL is a fiber-coupled version of the same laser, ...

Specifications

Center Wavelength: 0.680 um
Output Power: 1000 mW
LD Mode: Multi Mode
Operation Mode: CW
Power Stability Over 2 Hours After Warm-up: < 5 %
The SDL-808-LM-50000T is a high-power diode laser system emitting at 808nm. With an output power of 50W, this laser is designed for a wide range of industrial and scientific applications. It features TTL modulation and customizable options such as longer operation periods, improved power stability, analog modulation, line output ...

Specifications

Center Wavelength: 0.808 um
Output Power: 4000000 mW
Introducing the SDL-980-LM-XXXT 980nm Diode Laser from Shanghai Dream Lasers Technology Co., Ltd. This powerful and versatile laser offers an output power range of 8000-15000mW with a wavelength of 980±5nm, making it ideal for a range of precision applications. The SDL-980-LM-XXXT model features multi-mode LD mode and ...

Specifications

Center Wavelength: 0.980 um
Output Power: 15000 mW
USHIO HL63290HD 638nm 2.2W (CW) 2.5W (Pulse) AlGaInP Laser Diode

Specifications

Center Wavelength: 0.638 um
Output Power: 2200 mW
USHIO HL63520HD laser diode, 638nm, 2.4W power, 9mm CAN package

Specifications

Center Wavelength: 0.638 um
Output Power: 2400 mW
USHIO HL40033G 405nm 1000mW laser diode

Specifications

Center Wavelength: 0.405 um
Output Power: 1000 mW
Operating Current: 900mA
USHIO HL6501MG 658nm 35mW AlGaInP Laser Diode

Specifications

Center Wavelength: 0.658 um
Output Power: 35 mW
USHIO HL63193MG 638nm 700mW AlGaInP Laser Diode

Specifications

Center Wavelength: 0.638 um
Output Power: 700 mW
USHIO HL40085G 405nm 1000mW laser diode

Specifications

Center Wavelength: 0.405 um
Output Power: 1000 mW
USHIO HL8337MG/HL8338MG 830nm 50mW GaAlAs Laser Diode

Specifications

Center Wavelength: 0.830 um
Output Power: 50 mW
USHIO HL40071MG 405nm 300mW Violet Laser Diode

Specifications

Center Wavelength: 0.405 um
Output Power: 300 mW
OSRAM PLT5 520B Green Laser Diode in TO56 Package

Specifications

Center Wavelength: 0.520 um
Output Power: 80 mW
OSRAM PLT5 450B Blue Laser Diode in TO56 Package

Specifications

Center Wavelength: 0.450 um
Output Power: 80 mW

Frequently Asked Questions

Facet coating is a technique used to reduce the reflectivity of the laser cavity's end facets, which can cause optical feedback and degrade the laser's performance. By applying a thin layer of anti-reflective coating to the facets, the reflectivity can be minimized, resulting in higher output powers, better beam quality, and improved reliability.

Temperature and current are critical parameters that can affect the performance and lifetime of CW semiconductor lasers. High operating temperatures can cause degradation and failure of the laser due to increased thermal stress, while high currents can lead to increased heating, decreased efficiency, and premature aging. Careful control of temperature and current is essential for optimizing the performance and reliability of CW semiconductor lasers.

Yes, CW diode lasers are commonly used in medical and scientific applications, including biomedical imaging, microscopy, and spectroscopy. Their high efficiency, compact size, and ease of integration make them well-suited for these applications, where precise and reliable performance is critical.

Wavelength stabilization is a technique used to stabilize the output wavelength of CW semiconductor lasers by using a feedback mechanism to compensate for changes in temperature or current. This results in a more stable and consistent output wavelength, which is critical for applications such as optical communications and spectroscopy.

Quantum well design is a technique used to improve the efficiency and output power of CW semiconductor lasers by using a series of ultra-thin semiconductor layers to confine the electrons and holes in the laser's active region. This results in a higher gain, lower threshold current, and reduced heating, which can improve the laser's performance and lifetime.

Distributed feedback (DFB) lasers are a type of CW semiconductor laser that use a grating structure to provide feedback for the laser cavity. This results in a single-mode output with high spectral purity and narrow linewidth. DFB lasers are widely used in optical communications and sensing applications, where stable and precise performance is critical.

External modulation is a technique used to improve the performance of CW diode lasers by modulating the input signal externally, rather than directly modulating the laser itself. This can improve the laser's bandwidth, reduce noise, and enable higher data rates in optical communications and data networking applications.

Gain-switched lasers are a type of CW semiconductor laser that use a pulsed current to achieve a high peak power output. They offer several advantages over other types of CW semiconductor lasers, including higher peak powers, faster rise times, and lower costs. Gain-switched lasers are used in a variety of applications, including range finding, LIDAR, and materials processing.

There are 314 different CW Semiconductor Lasers from suppliers and manufacturers listed in this category. In just a few clicks you can compare different CW Semiconductor Lasers with each other and get an accurate quote based on your needs and specifications. Please note that the prices of CW Semiconductor Lasers vary significantly for different products based on various factors including technical parameters, features, brand name, etc. Please contact suppliers directly to inquire about the details and accurate pricing information for any product model. Simply navigate to the product page of interest and use the orange button to directly reach out to the respective supplier with one click.

Did You know?

The first useful semiconductor laser was made by R.N. Hall in 1962 which was composed of GaAs materials that emitted in near infrared at 0.8 µm. The semiconductor laser is similar to transistor, has the appearance of a LED but the output beam has the characteristics of a laser. The application that was the main driving force in the development of semiconductor lasers was in the field of long distance communications but at this moment the use of this laser in compact disc players constitutes their largest single market. Using semiconductor laser gives an advantage of low power consumption requirements.