EYP-RWL-1080-00080-0750-SOT01-0000 GaAs Semiconductor Laser Diode
Description
1080 nm Fabry-Perot Laser, sealed SOT Housing, Monitor Diode.
EYP-RWL-1080-00080-0750-SOT01-0000 GaAs Semiconductor Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 1.08 um |
| Output Power: | 90 mW |
Applications
- Spectroscopy
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How to order?
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Ships from:
Germany
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On FindLight:
External Vendor
Claim Eagleyard Photonics GmbH Page to edit and add data
Frequently Asked Questions
The center wavelength of the laser diode is 1080 nm.
The maximum forward current for the laser diode is 150 mA.
The maximum output power of the laser diode is 90 mW.
The polarization of the laser diode is TE, with the electric field parallel to the Pin 2 - Pin 3 plane.
The recommended operational temperature range for the laser diode is -20 to 50°C.
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