EYP-RWL-1120-00050-1300-SOT02-0000 GaAs Semiconductor Laser Diode
Description
1120 nm Fabry-Perot Laser, sealed SOT Housing, Monitor Diode.
EYP-RWL-1120-00050-1300-SOT02-0000 GaAs Semiconductor Laser Diode
Specifications |
|
|---|---|
| Center Wavelength: | 1.12 um |
| Output Power: | 55 mW |
Applications
- Spectroscopy
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Contact Supplier
How to order?
-
Ships from:
Germany
-
Sold by:
-
On FindLight:
External Vendor
Claim Eagleyard Photonics GmbH Page to edit and add data
Frequently Asked Questions
The center wavelength of the laser diode is 1120 nm.
The maximum output power of the laser diode is 55 mW.
The package pinout of the laser diode is M-Type Ground 1, Photo Diode (+) 2, Laser (+) 3.
The polarization of the laser diode is TE (E field parallel to Pin 2 - Pin 3 - plane).
The recommended operational temperature range is -20 to 50 degrees Celsius.
You May Also Like
Don’t have an account?
Please consider registering
NOTE: It may take up to 10 min to receive the registration verification link. For immediate assistance please use the “GUEST” option above.
Your inquiry has been received
by adding a password
Benefits of having an account:
- Save time on filling future request forms
- Track your prior Requests
- Save favorite products in your account
- Choose your contact preferences
- If you change your mind later, you may close you account with 1 click
The Leading Photonics Marketplace
Within 3-10 minutes you will receive an email with a validation link to activate your account.
If you don't receive the confirmation link soon, please let us know at contact@findlight.net
Useful quick links