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CW Semiconductor Lasers

The 852.347 nm DBR Laser Diode from Photodigm offers high-performance edge-emitting technology, ideal for Cesium-based atomic spectroscopy and Raman spectroscopy applications. Built on advanced monolithic single-frequency Gallium Arsenide (GaAs) technology, this laser provides a stable, single spatial mode beam with passivated facets ...

Specifications

Center Wavelength: 0.852 ±.0.006 um
Output Power: 80-240 mW
Laser Forward Voltage: 2 V
Operating Current, Max (CW & Pulsed): 350 mA
Optical Power At Max Operating Current: 240 mW
The Photodigm 845.584 nm DBR Laser Diode is a high-performance, edge-emitting semiconductor laser designed for precision spectroscopy and atomic cooling applications. Engineered with monolithic single-frequency Gallium Arsenide (GaAs) technology, this Distributed Bragg Reflector (DBR) laser ensures exceptional spectral purity, ...

Specifications

Center Wavelength: 0.845 ±.0.006 um
Output Power: 80-240 mW
Operating Current, Max (CW & Pulsed): 350 mA
Optical Power At Max Operating Current: 240 mW
Storage Temperature: 0 to +70 °C
The Photodigm 830 nm DBR Laser Diode is a high-performance, edge-emitting semiconductor laser designed for precision optical applications. Built on advanced monolithic single-frequency Gallium Arsenide (GaAs) technology, this Distributed Bragg Reflector (DBR) laser provides a stable single spatial mode beam, ensuring minimal noise ...

Specifications

Center Wavelength: 0.830 ±.0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
The 828 nm DBR Laser Diode from Photodigm is a high-performance, single-frequency laser designed for precision applications such as LIDAR and water vapor sensing. Based on advanced Gallium Arsenide (GaAs) monolithic technology, this distributed Bragg reflector (DBR) laser provides a single spatial mode beam with excellent spectral ...

Specifications

Center Wavelength: 0.828 ±.0.006 um
Output Power: 80-180 mW
Laser Forward Voltage: 2 V
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
The Photodigm 823 nm DBR Laser Diode is a high-performance, monolithic, single-frequency edge-emitting laser designed for precision optical applications. Engineered with Gallium Arsenide (GaAs) technology, it delivers a stable single spatial mode output with a nominal wavelength of 823 nm. Featuring passivated facets for enhanced ...

Specifications

Center Wavelength: 0.823 ±.0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
Product Description (180 words): The 810 nm DBR Laser Diode from Photodigm offers high performance and reliability, utilizing advanced Gallium Arsenide (GaAs) single-frequency laser technology. These edge-emitting diodes provide a high-power output range from 80 mW to 180 mW and are ideal for use in biomedical diagnostics and imaging ...

Specifications

Center Wavelength: 0.810 ±.0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mA
Storage Temperature: 0 to +75 °C
The 808 nm Series Distributed Bragg Reflector (DBR) Laser Diode is engineered for precision and reliability in high-performance applications. Utilizing Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) laser technology, this edge-emitting laser diode delivers exceptional performance with a single spatial ...

Specifications

Center Wavelength: 0.808 ±.0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +75 °C
The 800 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, edge-emitting semiconductor laser designed for applications requiring stable, single-frequency output. Based on Photodigm’s monolithic Gallium Arsenide (GaAs) technology, this laser provides a single spatial mode beam with high output power ranging ...

Specifications

Center Wavelength: 0.800 ± 0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +75 °C
The Photodigm 794.978 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, monolithic, single-frequency laser designed for precision applications in atomic spectroscopy, rubidium-based quantum sensing, and optical metrology. Engineered with Gallium Arsenide (GaAs) technology, it delivers a single spatial mode beam ...

Specifications

Center Wavelength: 0.794 ± .0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mA
Storage Temperature: 0 to +75 °C
The 785 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance edge-emitting laser designed for applications requiring a single-frequency, stable, and reliable optical source. Built using Photodigm’s advanced monolithic GaAs laser technology, this diode provides a single spatial mode beam and features passivated ...

Specifications

Center Wavelength: 0.785 ± .0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
The 780.241 nm Distributed Bragg Reflector (DBR) Laser Diode from Photodigm is engineered for high-precision applications in atomic spectroscopy, particularly for rubidium (Rb) atom-based experiments. Utilizing Photodigm's advanced monolithic single-frequency Gallium Arsenide (GaAs) technology, this laser provides a single spatial ...

Specifications

Center Wavelength: 0.780 ± .0.006 um
Output Power: 10-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +45 °C
The 778.105 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, edge-emitting laser diode that utilizes advanced monolithic Gallium Arsenide (GaAs) technology. This laser diode is designed specifically for precision atomic spectroscopy, especially in rubidium-based (Rb) applications, offering unparalleled ...

Specifications

Center Wavelength: 0.778 ± .0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
The 776.061 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance edge-emitting laser diode designed by Photodigm, Inc., utilizing advanced GaAs technology. Offering precise single-frequency operation, this laser diode is optimized for rubidium-based atomic spectroscopy, providing exceptional stability for rubidium ...

Specifications

Center Wavelength: 0.776 ± .0.006 um
Output Power: 40-120 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 120 mW
Beam Divergence (FWHM): 6 x 28 º
The Photodigm 770.108 nm DBR Laser Diode is a high-performance, single-frequency laser designed for precision atomic spectroscopy applications, particularly potassium (K) D1 transition experiments. Built on Photodigm’s advanced monolithic Gallium Arsenide (GaAs) platform, this distributed Bragg reflector (DBR) laser delivers a ...

Specifications

Center Wavelength: 0.770 ± .0.006 um
Output Power: 40-100 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 100 mW
Storage Temperature: 0 to +70 °C
The 737 nm Distributed Bragg Reflector (DBR) Laser Diode from Photodigm is a high-performance edge-emitting laser designed for precision optical applications. Utilizing monolithic single-frequency GaAs-based laser technology, this device delivers a single spatial mode beam, ensuring excellent spectral purity and stability. With a ...

Specifications

Center Wavelength: 0.737 ± .0.006 um
Output Power: 40-80 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 80 mW
Storage Temperature: 0 to +70 °C
The Photodigm 730 nm DBR Laser Diode is a high-performance edge-emitting laser designed using advanced monolithic single-frequency Gallium Arsenide (GaAs) technology. It delivers a single spatial mode beam with passivated facets for enhanced reliability. This diode provides high power output, excellent stability, and precise ...

Specifications

Center Wavelength: 0.730 ± .0.006 um
Output Power: 40-80 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 80 mW
Storage Temperature: 0 to +70 °C
The 760 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 760 nm Series DBR devices are used in O2 sensing, LiDAR, and ...

Specifications

Center Wavelength: 0.760 ± .0006 um
Output Power: 40-60 mW
Operating Current, Max (CW & Pulsed): 150 mA
Optical Power At Max Operating Current: 60 mW
Storage Temperature: 0 to +70 °C
The 766.700nm (K) DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 766.700 nm Series DBR devices are used in atomic ...

Specifications

Center Wavelength: 0.7667 +/- 0.0006 um
Output Power: 40-80 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 80 mW
Storage Temperature: 0 to +70 °C

Frequently Asked Questions

Facet coating is a technique used to reduce the reflectivity of the laser cavity's end facets, which can cause optical feedback and degrade the laser's performance. By applying a thin layer of anti-reflective coating to the facets, the reflectivity can be minimized, resulting in higher output powers, better beam quality, and improved reliability.

Temperature and current are critical parameters that can affect the performance and lifetime of CW semiconductor lasers. High operating temperatures can cause degradation and failure of the laser due to increased thermal stress, while high currents can lead to increased heating, decreased efficiency, and premature aging. Careful control of temperature and current is essential for optimizing the performance and reliability of CW semiconductor lasers.

Yes, CW diode lasers are commonly used in medical and scientific applications, including biomedical imaging, microscopy, and spectroscopy. Their high efficiency, compact size, and ease of integration make them well-suited for these applications, where precise and reliable performance is critical.

Wavelength stabilization is a technique used to stabilize the output wavelength of CW semiconductor lasers by using a feedback mechanism to compensate for changes in temperature or current. This results in a more stable and consistent output wavelength, which is critical for applications such as optical communications and spectroscopy.

Quantum well design is a technique used to improve the efficiency and output power of CW semiconductor lasers by using a series of ultra-thin semiconductor layers to confine the electrons and holes in the laser's active region. This results in a higher gain, lower threshold current, and reduced heating, which can improve the laser's performance and lifetime.

Distributed feedback (DFB) lasers are a type of CW semiconductor laser that use a grating structure to provide feedback for the laser cavity. This results in a single-mode output with high spectral purity and narrow linewidth. DFB lasers are widely used in optical communications and sensing applications, where stable and precise performance is critical.

External modulation is a technique used to improve the performance of CW diode lasers by modulating the input signal externally, rather than directly modulating the laser itself. This can improve the laser's bandwidth, reduce noise, and enable higher data rates in optical communications and data networking applications.

Gain-switched lasers are a type of CW semiconductor laser that use a pulsed current to achieve a high peak power output. They offer several advantages over other types of CW semiconductor lasers, including higher peak powers, faster rise times, and lower costs. Gain-switched lasers are used in a variety of applications, including range finding, LIDAR, and materials processing.

There are 359 different CW Semiconductor Lasers from suppliers and manufacturers listed in this category. In just a few clicks you can compare different CW Semiconductor Lasers with each other and get an accurate quote based on your needs and specifications. Please note that the prices of CW Semiconductor Lasers vary significantly for different products based on various factors including technical parameters, features, brand name, etc. Please contact suppliers directly to inquire about the details and accurate pricing information for any product model. Simply navigate to the product page of interest and use the orange button to directly reach out to the respective supplier with one click.

Did You know?

The first useful semiconductor laser was made by R.N. Hall in 1962 which was composed of GaAs materials that emitted in near infrared at 0.8 µm. The semiconductor laser is similar to transistor, has the appearance of a LED but the output beam has the characteristics of a laser. The application that was the main driving force in the development of semiconductor lasers was in the field of long distance communications but at this moment the use of this laser in compact disc players constitutes their largest single market. Using semiconductor laser gives an advantage of low power consumption requirements.