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Page 11 - CW Semiconductor Lasers

CM808DL10 is a high-quality C-mount package laser diode, which Fabry-Perot laser based on state-of-the-art, quantum-well epitaxial layer growth and reliable ridge waveguide structure.  CM808DL5/CM808DL10 is easy to mount and provides good thermal contact, making it an ideal choice for high power and OEM applications.  ...

Specifications

Center Wavelength: 808 um
Output Power: 10000 mW
Operating Current Iop: 5 A
Threshold Current Ith: 0.3 A
Operating Voltage Vop: 2 V
YLS-8304-01is a series of research-grade narrow-linewidth multimode lasers. 532/785/808/830/976/1064nm central wavelengths options are available.    External triggering and real-time monitoring are supported.YLS-8304-01 is compact and portable and has the advantages of narrow linewidth and stable power & wavelength ...

Specifications

Center Wavelength: 0.532 um
Output Power: 100 mW
Wavelength Options: 532nm (100mW), 785nm (500mW), 808nm (600mW), 830nm (600mW), 976nm (800mW), 1064 (800mW)
Wavelength Tolerance: ±0.5 nm
Linewidth: <0.08, <0.1, <0.3, <0.1, <0.3, <0.1 nm
Sharp To18 5.6mm 405nm 350MW Violet Laser Diode JLD4035Z.

Specifications

Center Wavelength: 0.405 um
Output Power: 350 mW
Storage Temperature: -40~85 °C
Threshold Current: 406 mA
Operating Current: 325 mA
In recent years, great success has been achieved in the development of GaN-based semiconductor lasers by diversifying the wavelength range and enhancing the optical output power. The emission wavelength has been extended from the UV-A region to the visible blue and green regions. As a result, the applications have been expanding into ...

Specifications

Center Wavelength: 0.405 um
Output Power: 300 mW
LD Reverse Voltage: 5 V
PD Reverse Voltage: 20 V
Storage Temperature: -35 ~ 85 °C
Thorlabs' ULN15TK Turnkey, Ultra-Low-Noise (ULN) Laser System is a ready-to-use laser system that integrates our ULN15PC laser, which has a patented fiber Bragg grating (FBG) based design, with a low-noise driver and temperature stabilization inside of a benchtop housing. This turnkey laser system provides ...

Specifications

Center Wavelength: 1.55 um
Output Power: >90 mW
Center Wavelength: 1550 nm
Linewidth (Lorentzian): <250 (Typ. 100) Hz
Power: >90 (Typ. 120) mW
HAM High Power CW Laser Modules
Onset Electro-optics Co Ltd
The HAM is designed for use with high power laser diodes with current requirements over 500mA. The HAM operates in either constant current or automatic power control mode, depending on the type of diode selected. For effective thermal management, the unit also contains an internal fan and heat sink. 

Specifications

Center Wavelength: -- um
Output Power: -- mW
IQ1C16 Blue Violet And UV Diode Laser Modules
Onset Electro-optics Co Ltd
Compact, versatile, and highly cost-effective, our blue, violet, and ultraviolet IQ (Instrument Quality) laser diode modules are ideal replacements for bulky, inefficient gas lasers. Most applications that use Argon-Ion, Helium Cadmium, and blue Nd:YAG lasers can take advantage of this newer, more efficient technology. Such ...

Specifications

Center Wavelength: 0.473 um
Output Power: 16 mW
OSRAM PLT5 450B Blue Laser Diode in TO56 Package

Specifications

Center Wavelength: 450 um
Output Power: 80 mW
OSRAM PLT5 520B Green Laser Diode in TO56 Package

Specifications

Center Wavelength: 520 um
Output Power: 80 mW
USHIO HL40071MG 405nm 300mW Violet Laser Diode

Specifications

Center Wavelength: 405 um
Output Power: 300 mW
USHIO HL8337MG/HL8338MG 830nm 50mW GaAlAs Laser Diode

Specifications

Center Wavelength: 830 um
Output Power: 50 mW
USHIO HL40085G 405nm 1000mW laser diode

Specifications

Center Wavelength: 405 um
Output Power: 1000 mW
USHIO HL63193MG 638nm 700mW AlGaInP Laser Diode

Specifications

Center Wavelength: 638 um
Output Power: 700 mW
USHIO HL6501MG 658nm 35mW AlGaInP Laser Diode

Specifications

Center Wavelength: 658 um
Output Power: 35 mW
USHIO HL63290HD 638nm 2.2W (CW) 2.5W (Pulse) AlGaInP Laser Diode

Specifications

Center Wavelength: 638 um
Output Power: 2200 mW
USHIO HL63520HD laser diode, 638nm, 2.4W power, 9mm CAN package

Specifications

Center Wavelength: 638 um
Output Power: 2400 mW
USHIO HL40033G 405nm 1000mW laser diode

Specifications

Center Wavelength: 405 um
Output Power: 1000 mW
Operating Current: 900mA
Anteryon’s diode laser modules are designed from the perspective of optical engineers, enabling our customers to have superior optical performance. Our customers receive high quality diode laser modules, manufactured and tested in our own factory. These are optimized for the required fit, form and function. Our aspherical ...

Specifications

Center Wavelength: N/A um
Output Power: N/A mW
Point lasers collimate the beam of a laser diode. Anteryon’s rigid mechanics, the perfect focusing and the Anteryon aspherical collimator lens give our laser modules a laser beam only limited by the laws of physics.If required, the beams pointing error normally found in focused laser modules can be adjusted to be collinear with the ...

Specifications

Center Wavelength: N/A um
Output Power: N/A mW
The QLD123F-4010 is a 1240-nm distributed feedback (DFB) laser suitable for gas sensing applications. The laser is mounted into a TO-56 header and hermetically sealed with a flat-type cap.

Specifications

Center Wavelength: 1.24 um
Output Power: 30 mW