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Page 13 - CW Semiconductor Lasers

920 nm Laser Diode | PH920DBR Series
Photodigm Inc.
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920 nm Laser Diode | PH920DBR Series
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The PH920DBR Series of high-power edge-emitting lasers are based onPhotodigm’s advanced single-frequency laser technology. It provides adiffraction limited, single lateral and longitudinal mode beam. Facets arepassivated for high-power reliability. Applications for the 920 nm laser diodeinclude spectroscopy, difference ...

Specifications
Center Wavelength: 0.920 um
Output Power: 40 mW
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895 nm Laser Diode | PH895DBR Series
Photodigm Inc.
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895 nm Laser Diode | PH895DBR Series
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The PH895DBR Series of high-power edge-emitting lasers are based on Photodigm’s advanced single-frequency laser technology. It provides a diffraction limited, single lateral and longitudinal mode beam.Facets are passivated for high-power reliability. 895 nm laser diodes are used in atomic spectroscopy for cesium based ...

Specifications
Center Wavelength: 0.859 um
Output Power: 40 mW
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895 nm DBR Laser Diode Mercury Series
Photodigm Inc.
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895 nm DBR Laser Diode Mercury Series
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The 895nm Mercury™ series of high-power edge-emitting lasers are based onPhotodigm’s advanced single-frequency laser technology. It provides adiffraction limited, single lateral and longitudinal mode beam in a compacthermetic package. Facets are passivated for high-power reliability. Applicationsinclude mobile ...

Specifications
Center Wavelength: 0.859 um
Output Power: 40 mW
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852 nm Laser Diode | PH852DBR Series
Photodigm Inc.
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852 nm Laser Diode | PH852DBR Series
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The PH852DBR Series of high-power edge-emitting lasers are based on Photodigm’s advanced single-frequency laser technology. It provides a diffraction limited, single lateral and longitudinal mode beam.Facets are passivated for high-power reliability. 852 nm laser diodes are used in atomic spectroscopy for cesium based applications.

Specifications
Center Wavelength: 0.852 um
Output Power: 40 mW
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852 nm Laser Diode | PH852DBR Mercury Series
Photodigm Inc.
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852 nm Laser Diode | PH852DBR Mercury Series
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The 852nm Mercury™ series of high-power edge-emitting lasers are based onPhotodigm’s advanced single-frequency laser technology. It provides adiffraction limited, single lateral and longitudinal mode beam in a compacthermetic package. Facets are passivated for high-power reliability. Applicationsinclude mobile ...

Specifications
Center Wavelength: 0.852 um
Output Power: 40 mW
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808 nm Laser Diode, Single Frequency DBR
Photodigm Inc.
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808 nm Laser Diode, Single Frequency DBR
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The PH808DBR Series of high-power edge-emitting lasers are based on Photodigm’s advancedsingle-frequency laser technology. The 808 nm laser diode is a DBR that provides a diffractionlimited, single lateral and longitudinal mode beam. Facets are passivated for high-power reliability.Devices used in medical diagnostics, solid ...

Specifications
Center Wavelength: 0.808 um
Output Power: N/A mW
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PH808DBR Mercury Series
Photodigm Inc.
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PH808DBR Mercury Series
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The 808nm Mercury™ series of high-power edge-emitting lasers are based onPhotodigm’s advanced single-frequency laser technology. It provides a diffractionlimited, single lateral and longitudinal mode beam in a compact hermetic package. Facets are passivated for high-power reliability. Applications include ...

Specifications
Center Wavelength: 0.807 um
Output Power: 40 mW
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795 nm Laser Diode | PH795DBR Series
Photodigm Inc.
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795 nm Laser Diode | PH795DBR Series
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The PH795DBR Series of high-power edge-emitting lasers are based onPhotodigm’s advanced single-frequency laser technology. It provides adiffraction limited, single lateral and longitudinal mode beam. Facets arepassivated for high-power reliability. Applications for the 795 nm LaserDiode include rubidium-based D1 applications.

Specifications
Center Wavelength: 0.795 um
Output Power: 40 mW
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795 nm DBR Laser Diode - Mercury Series
Photodigm Inc.
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795 nm DBR Laser Diode - Mercury Series
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The 795nm Mercury™ series of high-power edge-emitting lasers are basedon Photodigm’s advanced single-frequency laser technology. It provides adiffraction limited, single lateral and longitudinal mode beam in a compacthermetic package. Facets are passivated for high-power reliability.Applications include mobile ...

Specifications
Center Wavelength: 0.795 um
Output Power: 40 mW
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785 nm Laser Diode | PH785DBR Series
Photodigm Inc.
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785 nm Laser Diode | PH785DBR Series
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The PH785DBR Series of high-power edge-emitting lasers are based onPhotodigm’s advanced single-frequency laser technology. It provides adiffraction limited, single lateral and longitudinal mode beam. Facets arepassivated for high-power reliability. Applications for the 785 nm laser diodeinclude Raman spectroscopy and optical storage.

Specifications
Center Wavelength: 0.785 um
Output Power: 40 mW
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780 nm Laser Diode | PH780DBR Series
Photodigm Inc.
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780 nm Laser Diode | PH780DBR Series
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The PH780DBR Series of high-power edge-emitting lasers are based onPhotodigm’s advanced single-frequency laser technology. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for highpower reliability. Single frequency 780 nm laser diodes are used in atomicspectroscopy for ...

Specifications
Center Wavelength: 0.780 um
Output Power: 40 mW
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770 nm Laser Diode | PH770DBR Series
Photodigm Inc.
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770 nm Laser Diode | PH770DBR Series
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The PH770DBR Series of high-power edge-emitting lasers are based onPhotodigm’s advanced single-frequency laser technology. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high-power reliability. Applications of the 770 nm Laser Diode include spectroscopy for ...

Specifications
Center Wavelength: 0.770 um
Output Power: 40 mW
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767 nm Laser Diode | PH767DBR Series
Photodigm Inc.
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767 nm Laser Diode | PH767DBR Series
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The PH767DBR Series of high-power edge-emitting lasers are based on Photodigm’s advanced single-frequency laser technology. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high-power reliability. 767 nm Laser Diodes used for K D2 line spectroscopy.

Specifications
Center Wavelength: 0.767 um
Output Power: 40 mW
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760 nm Laser Diode | PH760DBR Series
Photodigm Inc.
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760 nm Laser Diode | PH760DBR Series
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This monolithic laser diode incorporates a distributed Bragg reflector (DBR) forstable frequency performance over its life time. It provides a diffraction limited,single lateral and longitudinal mode beam. Facets are passivated for highreliability. The 760 nm Laser Diode is designed specifically for O2 detection.

Specifications
Center Wavelength: 0.760 um
Output Power: 40 mW
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SPL BM88-20 Unmounted Diode Laser Bar
Osram Opto Semiconductors
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SPL BM88-20 Unmounted Diode Laser Bar
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30% fill factor, 880 nm

Specifications
Center Wavelength: 0.880 um
Output Power: 90000 mW
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SPL BK98-40 Unmounted Diode Laser Bar
Osram Opto Semiconductors
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SPL BK98-40 Unmounted Diode Laser Bar
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50% fill factor, 980nm

Specifications
Center Wavelength: 0.980 um
Output Power: 250000 mW
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SPL BK102-40 Unmounted Diode Laser Bar
Osram Opto Semiconductors
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SPL BK102-40 Unmounted Diode Laser Bar
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50% fill factor, 1020nm

Specifications
Center Wavelength: 1.020 um
Output Power: 250000 mW
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SPL BF98-40-5 Unmounted Diode Laser Bar
Osram Opto Semiconductors
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SPL BF98-40-5 Unmounted Diode Laser Bar
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10% fill factor, 980nm

Specifications
Center Wavelength: 0.971 um
Output Power: 40000 mW
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PLT5 520B Metal Can® TO56
Osram Opto Semiconductors
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PLT5 520B Metal Can® TO56
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Green Laser Diode in TO56 Package

Specifications
Center Wavelength: 0.520 um
Output Power: 80 mW
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PLT5 520_B1-3 Metal Can® TO56
Osram Opto Semiconductors
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PLT5 520_B1-3 Metal Can® TO56
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Green Laser Diode in TO56 Package

Specifications
Center Wavelength: 0.520 um
Output Power: 30 mW
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