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Page 2 - CW Semiconductor Lasers

The 816 nm DBR Laser Diode from Photodigm is a high-performance edge-emitting laser diode, featuring advanced Gallium Arsenide (GaAs) technology. Designed for precision and reliability, it delivers a stable, single-frequency beam ideal for demanding applications in biomedical diagnostics and imaging. The diode operates at a nominal ...

Specifications

Center Wavelength: 0.816 ±.0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
Product Description (180 words): The 810 nm DBR Laser Diode from Photodigm offers high performance and reliability, utilizing advanced Gallium Arsenide (GaAs) single-frequency laser technology. These edge-emitting diodes provide a high-power output range from 80 mW to 180 mW and are ideal for use in biomedical diagnostics and imaging ...

Specifications

Center Wavelength: 0.810 ±.0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mA
Storage Temperature: 0 to +75 °C
The 808 nm Series Distributed Bragg Reflector (DBR) Laser Diode is engineered for precision and reliability in high-performance applications. Utilizing Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) laser technology, this edge-emitting laser diode delivers exceptional performance with a single spatial ...

Specifications

Center Wavelength: 0.808 ±.0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +75 °C
The 800 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, edge-emitting semiconductor laser designed for applications requiring stable, single-frequency output. Based on Photodigm’s monolithic Gallium Arsenide (GaAs) technology, this laser provides a single spatial mode beam with high output power ranging ...

Specifications

Center Wavelength: 0.800 ± 0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +75 °C
The Photodigm 794.978 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, monolithic, single-frequency laser designed for precision applications in atomic spectroscopy, rubidium-based quantum sensing, and optical metrology. Engineered with Gallium Arsenide (GaAs) technology, it delivers a single spatial mode beam ...

Specifications

Center Wavelength: 0.794 ± .0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mA
Storage Temperature: 0 to +75 °C
The 785 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance edge-emitting laser designed for applications requiring a single-frequency, stable, and reliable optical source. Built using Photodigm’s advanced monolithic GaAs laser technology, this diode provides a single spatial mode beam and features passivated ...

Specifications

Center Wavelength: 0.785 ± .0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
The Photodigm 770.108 nm DBR Laser Diode is a high-performance, single-frequency laser designed for precision atomic spectroscopy applications, particularly potassium (K) D1 transition experiments. Built on Photodigm’s advanced monolithic Gallium Arsenide (GaAs) platform, this distributed Bragg reflector (DBR) laser delivers a ...

Specifications

Center Wavelength: 0.770 ± .0.006 um
Output Power: 40-100 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 100 mW
Storage Temperature: 0 to +70 °C
The Photodigm 730 nm DBR Laser Diode is a high-performance edge-emitting laser designed using advanced monolithic single-frequency Gallium Arsenide (GaAs) technology. It delivers a single spatial mode beam with passivated facets for enhanced reliability. This diode provides high power output, excellent stability, and precise ...

Specifications

Center Wavelength: 0.730 ± .0.006 um
Output Power: 40-80 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 80 mW
Storage Temperature: 0 to +70 °C
The 766.700nm (K) DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 766.700 nm Series DBR devices are used in atomic ...

Specifications

Center Wavelength: 0.7667 +/- 0.0006 um
Output Power: 40-80 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 80 mW
Storage Temperature: 0 to +70 °C
The Photodigm 739 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, single-frequency laser designed for applications requiring exceptional spectral purity and precision. Based on Photodigm’s advanced Gallium Arsenide (GaAs) monolithic laser technology, this edge-emitting diode provides a single spatial ...

Specifications

Center Wavelength: 0.739 ± .0.006 um
Output Power: 40-80 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 80 mW
Storage Temperature: 0 to +70 °C
SemiNex offers high-power infrared lasers with wavelengths ranging from 12xx to 19xx nm. These lasers are designed to deliver superior optical and electrical performance, with options for customization to meet specific customer requirements. The C-Mount design ensures cost-effectiveness and versatility for various applications, ...

Specifications

Center Wavelength: 1.480 um
Output Power: 5000 mW
Chip Cavity Length: 2500 μm
Emitter Width: 95 µm
Emitter Height: 1 μm
SemiNex SMX15XX Laser Diode delivers exceptional power and precision with wavelengths ranging from 12xx to 19xx nm, catering to various industrial and medical applications. Engineered for reliability, these laser diodes undergo rigorous testing to meet the highest performance standards. With customizable options available, SemiNex ...

Specifications

Center Wavelength: 1.565 um
Output Power: 400 mW
Chip Cavity Length: 2500 μm
Emitter Width: 4 μm
Emitter Height: 1 μm
Experience unparalleled power and precision with the SemiNex SMX19XX Laser Diode (1.9μm) - C-Mount. Crafted to deliver exceptional performance in the infrared spectrum, this laser diode offers a perfect blend of efficiency and cost-effectiveness. With output power reaching up to 1.10 watts (CW), it meets the demanding ...

Specifications

Center Wavelength: 1.940 um
Output Power: 1100 mW
Chip Cavity Length: 1500 μm
Emitter Width: 150 μm
Emitter Height: 1 μm
The 778.105 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, edge-emitting laser diode that utilizes advanced monolithic Gallium Arsenide (GaAs) technology. This laser diode is designed specifically for precision atomic spectroscopy, especially in rubidium-based (Rb) applications, offering unparalleled ...

Specifications

Center Wavelength: 0.778 ± .0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
The Photodigm 830 nm DBR Laser Diode is a high-performance, edge-emitting semiconductor laser designed for precision optical applications. Built on advanced monolithic single-frequency Gallium Arsenide (GaAs) technology, this Distributed Bragg Reflector (DBR) laser provides a stable single spatial mode beam, ensuring minimal noise ...

Specifications

Center Wavelength: 0.830 ±.0.006 um
Output Power: 80-180 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
The Photodigm 854.209 nm DBR Laser Diode is a high-performance, single-frequency, edge-emitting laser diode based on monolithic Gallium Arsenide (GaAs) technology. Designed for precision atomic spectroscopy, this device is Spectroscopy Certified, ensuring it reaches the Ca⁺ cooling transition (Ca⁺ CT) within ±10°C of room ...

Specifications

Center Wavelength: 0.854 ±.0.006 um
Output Power: 80-240 mW
Operating Current, Max (CW & Pulsed): 350 mA
Optical Power At Max Operating Current: 240 mW
Storage Temperature: 0 to +70 °C