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Page 22 - CW Semiconductor Lasers

The Stradus® diode laser module is a fully integrated, plug and play, and self‐contained laser module. The patented sealed optical cavity and the innovative electronics give the Stradus® laser unparalleled power stability, beam pointing stability, and low noise overtime and temperature.

Specifications

Center Wavelength: 0.488 um
Output Power: 50 mW
The Stradus® diode laser module is a fully integrated, plug and play, and self‐contained laser module. The patented sealed optical cavity and the innovative electronics give the Stradus® laser unparalleled power stability, beam pointing stability, and low noise overtime and temperature.

Specifications

Center Wavelength: 0.473 um
Output Power: 80 mW
The Stradus® diode laser module is a fully integrated, plug and play, and self‐contained laser module. The patented sealed optical cavity and the innovative give the Stradus® laser unparalleled power stability, beam pointing stability, and low noise over time and temperature.

Specifications

Center Wavelength: 0.445 um
Output Power: 80 mW
The Stradus® diode laser module is a fully integrated, plug and play, and self‐contained laser module. The patented sealed optical cavity and the innovative electronics give the Stradus® laser unparalleled power stability, beam pointing stability, and low noise overtime and temperature.

Specifications

Center Wavelength: 0.420 um
Output Power: 100 mW
The Stradus® diode laser module is a fully integrated, plug and play, and self‐contained laser module. The patented sealed optical cavity and the innovative electronics give the Stradus® laser unparalleled power stability, beam pointing stability, and low noise overtime and temperature.

Specifications

Center Wavelength: 0.405 um
Output Power: 250 mW
The Stradus® diode laser module is a fully integrated, plug and play, and self‐contained laser module. The patented sealed optical cavity and the innovative electronics give the Stradus® laser unparalleled power stability, beam pointing stability, and low noise overtime and temperature.

Specifications

Center Wavelength: 0.405 um
Output Power: 100 mW
The Stradus® diode laser module is a fully integrated, plug and play, and self‐contained laser module. The patented sealed optical cavity and the innovative electronics give the Stradus® laser unparalleled power stability, beam pointing stability, and low noise overtime and temperature.

Specifications

Center Wavelength: 0.395 um
Output Power: 100 mW
The ORION™ devices are compact laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with ...

Specifications

Center Wavelength: 1.550 um
Output Power: 20 mW
Optical Isolation: 40 dB
Power Stability: +/-0.3 %
Center Wavelength (ITU Grid): 1530 - 1565 nm
The ORION™ devices are compact laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity ...

Specifications

Center Wavelength: 1.550 um
Output Power: 10 mW
Power Stability: +/-0.3 %
Center Wavelength (ITU Grid): 1530 - 1565 nm
Wavelength Tuning Range: 30 pm
The RIO019x Series devices are high-performance cost effective External Cavity Laser (ECL). The design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant ...

Specifications

Center Wavelength: 1.550 um
Output Power: 20 mW
Side Mode Suppression Ratio: 40 dB
Center Wavelength (ITU Grid): 1530-1565nm
Relative Intensity Noise (>/= 1kHz): -140 dB/Hz
The RIO019x Series devices are high-performance cost effective External Cavity Laser (ECL). The design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity ...

Specifications

Center Wavelength: 1.550 um
Output Power: 10 mW
Center Wavelength (ITU Grid): 1530-1565nm
Side Mode Suppression Ratio: 40 dB
Wavelength Tunability: 30 pm
The ORION™ laser sources are compact benchtop lasers based on the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, ...

Specifications

Center Wavelength: 1.550 um
Output Power: 20 mW
Side Mode Suppression Ratio: 40 dB
Optical S/N Ratio: 60 dB
Polarization Extinction Ratio: 20 dB
The ORION™ laser sources are compact benchtop lasers based on the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, ...

Specifications

Center Wavelength: 1.550 um
Output Power: 10 mW
Power Stability Over Operating Temperature Range: +/- 0.3 %
Wavelength Tuning Range: 30 pm
Relative Intensity Noise: -140 db/Hz
The RIO GRANDE devices are high power laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, ...

Specifications

Center Wavelength: 1.550 um
Output Power: 2000 mW
Output Power Adjustment Range: 10-100%
Wavelength Stability: +/- 10 pm
Relative Intensity Noise (>/= 100Hz): -110 db/Hz
The RIO GRANDE devices are high power laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with ...

Specifications

Center Wavelength: 1.550 um
Output Power: 1000 mW
Output Power Adjustment Range: 10-100%
Wavelength Stability: +/- 10 pm
Relative Intensity Noise (>/= 100Hz): -110 dB/Hz
The RIO GRANDE devices are high power laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, ...

Specifications

Center Wavelength: 1.550 um
Output Power: 200 mW
Output Power Adjustment Range: 10-100%
Wavelength Stability: +/- 10 pm
Relative Intensity Noise (>/= 100Hz): -110 db/Hz
The RIO COLORADO widely tunable laser sources are compact benchtop lasers sources based on semiconductor external cavity laser technology.Key characteristics:* Wavelength tuning range: C-band, 1530nm-1565nm, including ITU wavelength* L-band available* Low phase / frequency noise* Narrow linewidth, long coherence length* Low relative ...

Specifications

Center Wavelength: 1.550 um
Output Power: 20 mW
Output Power Range: 5-20mW
Wavelength Tuning Range (L-Band): 1570.01-1608.76nm
Side Mode Suppression Ratio: 55 dB
The RIO COLORADO widely tunable laser sources are compact benchtop lasers sources based on semiconductor external cavity laser technology. Key characteristics: * Wavelength tuning range: C-band, 1530nm-1565nm, including ITU wavelength* L-band available* Low phase / frequency noise* Narrow linewidth, long coherence length* Low ...

Specifications

Center Wavelength: 1.550 um
Output Power: 20 mW
Output Power Range: 5-20mW
Wavelength Tuning Range (C-Band): 1527.60-1565.60
Side Mode Suppression Ratio: 55 dB
The RIO019X-X-XX-X devices are high-performance cost effective External Cavity Laser (ECL). The design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant ...

Specifications

Center Wavelength: 1.064 um
Output Power: 20 mW
Threshold Current (typ.): 30 mA
Laser Bias Current: 100 mA
Wavelength Vs. TEC Temperature (Tset +/- 1 ºC): 14 pm/ºC
The RIO019X-X-XX-X devices are high-performance cost effective External Cavity Laser (ECL). The design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with ...

Specifications

Center Wavelength: 1.064 um
Output Power: 10 mW
Threshold Current: 30 mA
Laser Bias Current: 100 mA
Wavelength Vs. TEC Temperature (Tset +/- 1 ºC): 14 pm/ºC