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Page 6 - CW Semiconductor Lasers

The LBX-638-XXX-CSB laser diode module is part of the LaserBoxx low noise series of CW DPSS laser and laser diode modules available at a variety of wavelengths from 375nm through 980nm.  The LBX lasers are a fully integrated laser diode solution that provides an extremely stable, <0.2% rms, TEM00 output beam with ...

Specifications

Center Wavelength: 0.638 um
Output Power: 180 mW
The LaserBoxx HPE series is a high-power multimode CW laser series from Oxxius featuring excellent performance and reliability in a compact, fully integrated laser module.  With power levels in the 100’s of mW range to +2W, the LaserBoxx HPE is available at wavelengths of 375 to 940nm. The LaserBoxx series is designed with ...

Specifications

Center Wavelength: 0.638 um
Output Power: 1100 mW
The LBX-638-XXX-CSB laser diode module is part of the LaserBoxx low noise series of CW DPSS laser and laser diode modules available at a variety of wavelengths from 375nm through 980nm.  The LBX lasers are a fully integrated laser diode solution that provides an extremely stable, <0.2% rms, TEM00 output beam with ...

Specifications

Center Wavelength: 0.638 um
Output Power: 150 mW
The LBX lasers are a fully integrated laser diode solution that provides an extremely stable, <0.2% rms, TEM00 output beam with outstanding pointing stability, and fast modulation capabilities.  The LCX/LPX lasers are self-contained modules that utilize Oxxius’ proprietary alignment-free monolithic resonator. The ...

Specifications

Center Wavelength: 0.785 um
Output Power: 350 mW
The LaserBoxx HPE series is a high-power multimode CW laser series from Oxxius featuring excellent performance and reliability in a compact, fully integrated laser module.  With power levels in the 100’s of mW range to +2W, the LaserBoxx HPE is available at wavelengths of 375 to 940nm.  The LaserBoxx series is ...

Specifications

Center Wavelength: 0.785 um
Output Power: 800 mW
The LBX lasers are a fully integrated laser diode solution that provides an extremely stable, <0.2% rms, TEM00 output beam with outstanding pointing stability, and fast modulation capabilities.  The LCX/LPX lasers are self-contained modules that utilize Oxxius’ proprietary alignment-free monolithic resonator. The ...

Specifications

Center Wavelength: 0.785 um
Output Power: 250 mW
The LBX-730-40-CSB laser diode module is part of the LaserBoxx low noise series of CW DPSS laser and laser diode modules available at a variety of wavelengths from 375nm through 980nm.  The LBX lasers are a fully integrated laser diode solution that provides an extremely stable, <0.2% RMS, TEM00 output beam with ...

Specifications

Center Wavelength: 0.730 um
Output Power: 40 mW
The LBX lasers are a fully integrated laser diode solution that provides an extremely stable, <0.2% rms, TEM00 output beam with outstanding pointing stability, and fast modulation capabilities.  The LCX/LPX lasers are self-contained modules that utilize Oxxius’ proprietary alignment-free monolithic resonator. The ...

Specifications

Center Wavelength: 0.785 um
Output Power: 100 mW
This 808nm diode laser produces 4000mW from a 150um emitter in the free space packages or 3200mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.808 um
Output Power: 4000 mW
This 808nm diode laser produces 10000mW from a 200um emitter in the free space packages or 8000mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.808 um
Output Power: 10000 mW
World Star Tech offers a complete line of blue, green and infrared OSRAM laser diodes. Complete characterization services of these diodes are available, making your manufacturing process easier, more reliable and cost effective. We provide wavelength, laser threshold current, slope efficiency, voltage and monitoring diode ...

Specifications

Center Wavelength: 0.5 um
Output Power: 80 mW
World Star Tech offers a complete line of blue, green and infrared OSRAM laser diodes. Complete characterization services of these diodes are available, making your manufacturing process easier, more reliable and cost effective. We provide wavelength, laser threshold current, slope efficiency, voltage and monitoring diode ...

Specifications

Center Wavelength: 0.45 um
Output Power: 80 mW
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...

Specifications

Center Wavelength: 0.647 um
Output Power: 150 mW
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...

Specifications

Center Wavelength: 0.658 um
Output Power: 35 mW
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...

Specifications

Center Wavelength: 0.658 um
Output Power: 85 mW
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...

Specifications

Center Wavelength: 0.658 um
Output Power: 85 mW
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...

Specifications

Center Wavelength: 0.637 um
Output Power: 250 mW
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...

Specifications

Center Wavelength: 0.642 um
Output Power: 150 mW
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...

Specifications

Center Wavelength: 0.642 um
Output Power: 90 mW
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...

Specifications

Center Wavelength: 0.642 um
Output Power: 90 mW