Page 6 - CW Semiconductor Lasers

Gas Detection DFB Butterfly Device-SGNLD-XXXX-XX-XX-FA-14-XX-X

Gas Detection DFB Butterfly Device-SGNLD-XXXX-XX-XX-FA-14-XX-X

Gas Detection DFB Butterfly Device Introducing the Gas Detection DFB Butterfly Device, a premium quality component designed to enhance the performance of optical transmitter systems. This device features a ...

Specifications
Center Wavelength: 1550 um
Output Power: 60 mW
Threshold Current: 55 mA
Center Wavelength: λc nm
Side-mode Suppression Ratio: 40 dB
High-Power Raman Lasers 532nm 638nm 785nm 1064nm

High-Power Raman Lasers 532nm 638nm 785nm 1064nm

Our high-power, spectrum-stabilized Raman lasers are engineered for exceptional performance in Raman spectroscopy and pump laser applications. These lasers feature side mode suppression ratios better than 40 dB, ...

Sold by: Ocean Optics Ships from: United States
Specifications
Center Wavelength: 0.532 um
Output Power: 100 mW
Laser Source: Diode
Typical Output Power (1064 Nm): Adjustable to >500 mW
Typical Output Power (785 Nm): >350 mW
LDX-3105-1550: Multimode Laser Diode 1550nm

LDX-3105-1550: Multimode Laser Diode 1550nm

The LDX Optronics 1064–1850 nm Laser Diode Series delivers high-power, high-reliability solutions for demanding infrared applications. Covering a broad near-IR to mid-IR wavelength range, these laser diodes are ...

Sold by: RPMC Lasers, Inc. Ships from: United States
Specifications
Center Wavelength: 1.55 um
Output Power: 1000 mW
Package Types: Chip on Carrier, C-Mount, B-Mount, Q-Mount, 9mm, TO-3 no TEC, HHL, 9mm SMA, 2-Pin FC, 8-pin HHL, 9-pin HHL
Operating Temperature: 25 °C
Threshold Current (mA) Typ: 350 mA
LDX-2410-645: 645nm 400mW Multimode Laser Diode

LDX-2410-645: 645nm 400mW Multimode Laser Diode

The LDX Optronics 445–665 nm Laser Diode Series delivers exceptional performance for precision optical applications, offering a broad range of wavelengths, emitter sizes, and output powers. Designed for both ...

Sold by: RPMC Lasers, Inc. Ships from: United States
Specifications
Center Wavelength: 0.645 um
Output Power: 400 mW
Emitter Size: 100 um
Min Fiber Size HHL & BTF: 100 um
Min Fiber Size 9mm SMA: 250 um
LDX-2205-627: 627nm 250mW Multimode Laser Diode

LDX-2205-627: 627nm 250mW Multimode Laser Diode

The LDX Optronics 445–665 nm Laser Diode Series delivers exceptional performance for precision optical applications, offering a broad range of wavelengths, emitter sizes, and output powers. Designed for both ...

Sold by: RPMC Lasers, Inc. Ships from: United States
Specifications
Center Wavelength: 0.627 um
Output Power: 250 mW
Emitter Size: 50 um
Min Fiber Size HHL & BTF: 100 um
Min Fiber Size 9mm SMA: 200 um
808nm High Stability Single-mode Pump Laser Source

808nm High Stability Single-mode Pump Laser Source

Connet VENUS series 808nm single-mode pump laser source uses a single-mode semiconductor laser with FBG wavelength- stabilized grating, which has stable wavelength and high output power.     The ...

Specifications
Center Wavelength: 0.808 um
Output Power: 250 mW
Dimensions: 340(L) x 240(W) x 100(H) mm
Storage Temperature: -40 to +85 ℃
Operating Temperature: 0 to +50 ℃
LDX-4224-750: 750nm Laser Diode Bar Package

LDX-4224-750: 750nm Laser Diode Bar Package

High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options ...

Sold by: RPMC Lasers, Inc. Ships from: United States
Specifications
Center Wavelength: 0.75 um
Output Power: 20000 mW
High-Power Red Diode Lasers Emitting at 680nm with Customizable Options

High-Power Red Diode Lasers Emitting at 680nm with Customizable Options

The SDL-680-LM-XXXT is a high-performance red diode laser emitting at 680nm with an output power of 1-1000mW. It features TTL modulation and customizable options such as power stability, analog modulation, line ...

Specifications
Center Wavelength: 0.68 um
Output Power: 1000 mW
LD Mode: Multi Mode
Operation Mode: CW
Power Stability Over 2 Hours After Warm-up: < 5 %
USHIO HL63290HD 638nm 2200mW Laser Diode

USHIO HL63290HD 638nm 2200mW Laser Diode

The HL63290HD is a high-performance AlGaInP laser diode designed to deliver exceptional optical output power and reliability. With a typical wavelength of 638nm, this laser diode is engineered to meet the demanding ...

Sold by: The Optoelectronics Company Ltd Ships from: United Kingdom
Specifications
Center Wavelength: 0.638 um
Output Power: 2200 mW
Optical Output Power (Pulse): 2.5 W
Operating Current: 2.4 A
Pulse Operating Current: 2.5 A
USHIO HL63520HD 638nm 2400mW Laser Diode

USHIO HL63520HD 638nm 2400mW Laser Diode

The HL63520HD is a cutting-edge AlGaInP laser diode designed to deliver exceptional performance in a compact form factor. This laser diode operates at a shorter wavelength of 638nm, making it ideal for applications ...

Sold by: The Optoelectronics Company Ltd Ships from: United Kingdom
Specifications
Center Wavelength: 0.638 um
Output Power: 2400 mW
Pulse Optical Output Power: 3.5 W
Wavelength: 638 nm
LD Reverse Voltage: 2 V
USHIO HL40033G 405nm 1000mW Laser Diode

USHIO HL40033G 405nm 1000mW Laser Diode

The HL400 Violet Laser Diode is a cutting-edge component designed to deliver exceptional performance in a variety of applications. Operating at a wavelength of 405nm, this laser diode is engineered to provide a ...

Sold by: The Optoelectronics Company Ltd Ships from: United Kingdom
Specifications
Center Wavelength: 0.405 um
Output Power: 1000 mW
Package: f9.0 mm
Operating Temperature: 0 ~ +30 °C
Storage Temperature: -40 ~ +85 °C
USHIO HL6501MG 658nm 35mW AlGaInP Laser Diode

USHIO HL6501MG 658nm 35mW AlGaInP Laser Diode

The HL6501MG is a high-performance AlGaInP laser diode designed to deliver exceptional visible light output at a typical wavelength of 658 nm. This laser diode is engineered to provide a stable and reliable optical ...

Sold by: The Optoelectronics Company Ltd Ships from: United Kingdom
Specifications
Center Wavelength: 0.658 um
Output Power: 35 mW
Operating Temperature: -10 ~ +60 °C
Storage Temperature: -40 ~ +85 °C
Threshold Current: 30-70 mA
USHIO HL63193MG 638nm 700mW AlGaInP Laser Diode

USHIO HL63193MG 638nm 700mW AlGaInP Laser Diode

The HL63193MG is a high-performance laser diode designed to deliver exceptional visible light output at a typical wavelength of 638nm. This laser diode is engineered with advanced AlGaInP technology, ensuring robust ...

Sold by: The Optoelectronics Company Ltd Ships from: United Kingdom
Specifications
Center Wavelength: 0.638 um
Output Power: 700 mW
Small Package: φ 5.6 mm
Optical Output Power (1): 700 mW
Operating Temperature: -10 ~ +40 °C
USHIO HL40085G 405nm 1000mW Laser Diode

USHIO HL40085G 405nm 1000mW Laser Diode

The HL40085G is a high-performance violet laser diode designed to deliver exceptional optical output power of 1,000mW at a typical wavelength of 405nm. This laser diode is engineered for precision and efficiency, ...

Sold by: The Optoelectronics Company Ltd Ships from: United Kingdom
Specifications
Center Wavelength: 0.405 um
Output Power: 1000 mW
Operating Voltage: 5.0 V
Package: 9.0mm
Optical Output Power (Max): 1,100 mW
USHIO HL40071MG 405nm 300mW Violet Laser Diode

USHIO HL40071MG 405nm 300mW Violet Laser Diode

Introducing the HL40071MG, a cutting-edge violet laser diode designed to deliver exceptional performance and reliability. This laser diode operates at a wavelength of 405nm, providing a vibrant violet light that is ...

Sold by: The Optoelectronics Company Ltd Ships from: United Kingdom
Specifications
Center Wavelength: 0.405 um
Output Power: 300 mW
Operation Temperature: -0~+70°C
Package: 5.6mm
Optical Output Power (Max): 360mW
PLT5 520B Green Laser Diode in TO56 Package

PLT5 520B Green Laser Diode in TO56 Package

The PLT5 520B is a cutting-edge green laser diode housed in a robust TO56 package, designed to deliver exceptional performance for a variety of applications. This laser diode is engineered to provide a continuous ...

Sold by: The Optoelectronics Company Ltd Ships from: United Kingdom
Specifications
Center Wavelength: 0.52 um
Output Power: 80 mW
Operating Temperature Range: -20 °C to 60 °C
Storage Temperature Range: -40 °C to 85 °C
Junction Temperature Max: 120 °C