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Page 9 - CW Semiconductor Lasers

LR-1-650 Laser Diode Module by WORLD STAR TECH: Crafted for precision, the LR-1-650 laser diode module is distinguished for its collimated beam quality, high stability, and low noise. Featuring ESD & reverse polarity protection, this laser module ensures safety and longevity. All these stellar features are presented at a ...

Specifications

Center Wavelength: 650 um
Output Power: 1 mW
Power Stability (with Heat Sink): < 1 %
Wavelength Drift: 0.2 nm/°C
Laser Class: Class 2
LQB-Series Laser diode modules encapsulate efficiency and precision in a compact brass body. Designed for robust industrial applications, they integrate a laser driver circuit, advanced aspherical plastic lens optics, and a high-performance laser diode. The module's compact design, superior beam quality, and cost-effectiveness set it ...

Specifications

Center Wavelength: 0.635 um
Output Power: 0.4 mW
Laser Power Stability (with Heat Sink): < 1 %
Wavelength Drift: 0.2 nm/°C
Laser Class: Class 1
World Star Tech presents the WLD-175-405, a premium 405 nm single mode blue-violet laser diode that delivers 175 mW optical power (CW). With its compact 5.6mm package, this laser diode is an optimal choice for various applications, particularly in the biomedical field where consistent performance, longevity, and stability are ...

Specifications

Center Wavelength: 0.405 um
Output Power: 175 mW
Optical Output Power (Max): 210 mW
Reverse Voltage: 2 V
Operating Case Temperature Range: -5 to +85 °C
Ushio Opto Semiconductor offers a diverse range of laser diodes spanning from 405nm to 850nm. The HL40033G, a 1000mW 405nm violet diode, is tailored for imaging, biomedical, and various industrial needs. For those seeking a single mode 405nm diode, the HL40071MG from Ushio offers up to 300 mW of power. Within the red laser diode ...

Specifications

Center Wavelength: 0.670 um
Output Power: 15 mW
Operation Temperature: -10 to +60 °C
Operating Voltage: 2.3 to 2.7 V
Package Diameter: φ5.6 mm
Ushio Opto Semiconductor is at the forefront of laser diode technology, presenting a vast range of Ushio/Opnext Laser Diodes that span from 405nm to 850nm. Our collection is tailored to various power levels to address diverse needs: HL40033G (405nm, 1000mW): This violet diode is meticulously designed for imaging, biomedical, and ...

Specifications

Center Wavelength: 0.670 um
Output Power: 10 mW
Threshold Current (typ.): 20 mA
Operating Current (typ.): 30 mA
Operating Voltage (typ.): 2.2 V
Ushio Opto Semiconductor, also known as Ushio/Opnext, offers an extensive range of Laser Diodes, spanning wavelengths from 405nm to 850nm and varying power levels. Highlighted Products: HL40033G (1000mW, 405nm): A violet diode, perfect for imaging, biomedical, and industrial applications. HL40071MG: A new addition to our ...

Specifications

Center Wavelength: 0.633 um
Output Power: 100 mW
LD Reverse Voltage: 2 V
Operating Temperature: -10 to +40 C
Storage Temperature: -40 to +85 C
The 830L-1XA Laser Diode Module is a compact and versatile laser source from RPMC Lasers Inc. It operates at a wavelength of 830nm and offers multiple fiber-coupled options. With its ultra-compact all-in-one design and thermally stabilized optics, this laser module ensures reliable and maintenance-free operation. It features ...

Specifications

Center Wavelength: 0.83 um
Output Power: 130 mW
Polarization Direction: Horizontal
Polarization Contrast: 2000:1
Longitudinal Modes: Multiple
The HL65221DG/222DG/223DG AlGaInP Laser Diode is a high-performance laser diode designed for various applications that require a visible light source. With a lasing wavelength of 660nm and a single transverse mode, this laser diode offers reliable and precise optical output power for your needs. Whether it's sensor applications or ...

Specifications

Center Wavelength: 0.660 um
Output Power: 210 mW
Threshold Current: 60 mA
Operating Current: 230 mA
Operating Current (Pulse): 405 mA
The HL65232DG/232DG/233DG AlGaInP Laser Diode is a high-performance laser diode designed for various applications that require a visible light source. With a lasing wavelength of 660nm and single transverse mode operation, this laser diode delivers reliable and efficient performance. It offers a visible light output of 160mW ...

Specifications

Center Wavelength: 0.660 um
Output Power: 160 mW
Optical Output Power (Pulse): 320 mW
Operating Current (CW): 190 mA
Operating Current (Pulse): 310 mA
Introducing the USHIO HL6523X Red Laser Diode, an impeccable choice for sensor applications and optical equipment. Operating at a 660nm wavelength, this compact laser diode delivers high-powered performance with 160mW continuous wave (CW) and 320mW pulsed output. Its low operating current and single transverse mode make it an ...

Specifications

Center Wavelength: 0.660 um
Output Power: 160 mW
Optical Output Power (Pulse): 320 mW
Operating Current (CW): 190 mA
Operating Current (Pulse): 310 mA
This AlGaInP laser diode emits visible light at 658nm with a typical optical output power of 85mW (CW) and 310mW (Pulse). It operates at low current and features single transverse mode and TE mode oscillation. Designed for sensor applications and as a light source in optical equipment.

Specifications

Center Wavelength: 0.660 um
Output Power: 130 mW
Threshold Current: 30-50 mA
Operating Current: 90-120 mA
Operating Voltage: 2.6-3.3 V
The HL65223DG/222DG/223DG AlGaInP Laser Diode is a high-performance laser diode designed for various applications that require a visible light source. With a lasing wavelength of 660nm and a single transverse mode, this laser diode offers reliable and precise optical output power for your needs. Whether it's sensor applications or ...

Specifications

Center Wavelength: 0.660 um
Output Power: 210 mW
Threshold Current: 60 mA
Operating Current: 230 mA
Operating Current (Pulse): 405 mA
The HL7301MG-A/02MG-A is a high-performance InGaAsP laser diode with a lasing wavelength of 730nm and an optical output power of 50mW (continuous wave). It is designed for various applications that require precise and reliable laser output. With its compact package and advanced features, this laser diode offers exceptional ...

Specifications

Center Wavelength: 0.730 um
Output Power: 50 mW
Threshold Current: 30 mA
Operating Current: 100 mA
Operating Voltage: 2.5 V
The HL8340MG-A/41MG-A is a high-performance GaAlAs laser diode with a lasing wavelength of 852nm and an optical output power of 50mW (CW). It operates at a low voltage of up to 2.4V and features a compact package size of φ5.6mm. With single transverse mode and TE mode oscillation, it is ideal for sensor applications, night ...

Specifications

Center Wavelength: 0.852 um
Output Power: 50 mW
Threshold Current: 20 mA
Operating Current: 75 mA
Operating Voltage: 1.9 V
The LQB-0.4S-650 Laser Diode Module by World Star Tech is a compact and reliable laser module designed for various applications. With a wavelength of 650nm and an optical output power of less than 0.4mW, it provides a collimated beam with high stability and low noise. The laser module operates in a continuous mode and features a ...

Specifications

Center Wavelength: 0.650 um
Output Power: 0.4 mW
Laser Power Stability: <1% (with heat sink)
Wavelength Drift: 0.2 nm/°C
Laser Class: Class 1
The UH5-10G-635 Laser Diode Module by World Star Tech is a high-performance laser module designed for a variety of applications. With a wavelength of 635nm and an optical output power of 10mW, it provides a reliable and stable laser beam. The laser module operates in a continuous mode and features a single-mode laser structure. It ...

Specifications

Center Wavelength: 0.635 um
Output Power: 10 mW
Laser Power Stability: <1% (with heat sink)
Wavelength Drift: 0.2 nm/°C
Laser Class: Class IIIB
The HL8337MG-A/38MG-A is a high-performance GaAlAs laser diode designed for various sensor applications, night vision systems, machine vision applications, and as a light source for optical equipment. With its compact package and single transverse mode, this laser diode offers reliable and efficient performance. It operates at a low ...

Specifications

Center Wavelength: 0.830 um
Output Power: 50 mW
Threshold Current: 20 mA
Operating Current: 75 mA
Operating Voltage: 1.9 V
The HL8337MG-A/38MG-A is a high-performance GaAlAs laser diode designed for various sensor applications, night vision systems, machine vision applications, and as a light source for optical equipment. With its compact package and single transverse mode, this laser diode offers reliable and efficient performance. It operates at a low ...

Specifications

Center Wavelength: 0.830 um
Output Power: 50 mW
Threshold Current: 20 mA
Operating Current: 75 mA
Operating Voltage: 1.9 V
The HL7001MG-A/02MG-A is a high-performance laser diode designed for various applications. With its infrared lasing capability at 705nm and an optical output power of 50mW, this laser diode offers reliable and efficient performance. It operates at low voltage, features a compact package size of φ5.6mm, and is suitable for ...

Specifications

Center Wavelength: 0.705 um
Output Power: 50 mW
Threshold Current: 30 mA
Operating Current: 75 mA
Operating Voltage: 2.5 V
The HL7002MG-A/02MG-A is a high-performance laser diode designed for various applications. With its infrared lasing capability at 705nm and an optical output power of 50mW, this laser diode offers reliable and efficient performance. It operates at low voltage, features a compact package size of φ5.6mm, and is suitable for ...

Specifications

Center Wavelength: 0.705 um
Output Power: 50 mW
Threshold Current: 30 mA
Operating Current: 75 mA
Operating Voltage: 2.5 V