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Page 7 - Not Applicable Pulsed Semiconductor Lasers

PGEW1S09H 905 nm Pulsed Semiconductor Laser
Pacer USA LLC
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PGEW1S09H 905 nm Pulsed Semiconductor Laser
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Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 20-20ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 23 W
Data Sheet
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QPGAx3S09H Pulsed Laser Diodes
Pacer USA LLC
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QPGAx3S09H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 255 W
Data Sheet
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QPGAx3S03H Pulsed Laser Diodes
Pacer USA LLC
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QPGAx3S03H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 85 W
Data Sheet
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QPGAx2S09H Pulsed Laser Diodes
Pacer USA LLC
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QPGAx2S09H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 175 W
Data Sheet
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QPGAx2S03H Pulsed Laser Diodes
Pacer USA LLC
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QPGAx2S03H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 58 W
Data Sheet
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TPGAx2S09H Pulsed Laser Diodes
Pacer USA LLC
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TPGAx2S09H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 150 W
Data Sheet
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TPGAx2S03H Pulsed Laser Diodes
Pacer USA LLC
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TPGAx2S03H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 45 W
Data Sheet
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QPGAx1S09H Pulsed Laser Diodes
Pacer USA LLC
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QPGAx1S09H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 90 W
Data Sheet
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QPGAx1S03H Pulsed Laser Diodes
Pacer USA LLC
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QPGAx1S03H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 30 W
Data Sheet
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TPGAx1S09H Pulsed Laser Diodes
Pacer USA LLC
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TPGAx1S09H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 75 W
Data Sheet
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TPGAx1S03H Pulsed Laser Diodes
Pacer USA LLC
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TPGAx1S03H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 23 W
Data Sheet
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DPGAx1S09H Pulsed Laser Diodes
Pacer USA LLC
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DPGAx1S09H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 50 W
Data Sheet
Inquire Price
DPGAx1S03H Pulsed Laser Diodes
Pacer USA LLC
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DPGAx1S03H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 16 W
Data Sheet
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PGAx1S09H Pulsed Laser Diodes
Pacer USA LLC
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PGAx1S09H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 25 W
Data Sheet
Inquire Price
PGAx1S03H Pulsed Laser Diodes
Pacer USA LLC
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PGAx1S03H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 8 W
Data Sheet
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NL742 Ultra-stable Nanosecond Laser
EKSPLA
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NL742 Ultra-stable Nanosecond Laser
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The main feature of NL740 series is the output of ultra-stable tunable duration (2 – 10 ns) narrow bandwidth nanosecond pulses based on temporally driven CW diode laser seeder and amplification stages. Start of the system is the single mode DFB laser with temporal output power modulator. Such front-end ensures reliable ...

Specifications
Output Power (avg): 0.01 W
Wavelength: 1.064 um
Pulse Duration: 3-10ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
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NL740 Ultra-stable Nanosecond Laser
EKSPLA
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NL740 Ultra-stable Nanosecond Laser
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The main feature of NL740 series is the output of ultra-stable tunable duration (2 – 10 ns) narrow bandwidth nanosecond pulses based on temporally driven CW diode laser seeder and amplification stages. Start of the system is the single mode DFB laser with temporal output power modulator. Such front-end ensures reliable ...

Specifications
Output Power (avg): 0.0002 W
Wavelength: 1.064 um
Pulse Duration: 3-10ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
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QuickSwitch Hybrid Pulsed Laser Diode with Shortest Pulse Duration
Laser Components USA, Inc.
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QuickSwitch Hybrid Pulsed Laser Diode with Shortest Pulse Duration
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LASER COMPONENTS Canada has developed a hybrid pulsed laser diode with the currently shortest pulse duration in the world. In one second, the QuickSwitch PLD generates up to 200,000 laser pulses with a typical duration of 2.5 ns. Depending on the operating voltage, it achieves an optical peak power of up to 89 watts. A high current ...

Specifications
Output Power (avg): 89 W
Wavelength: 0.905 um
Pulse Duration: 2.4-3ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
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High Power Pulsed Laser Diodes 1550-Series
Laser Components USA, Inc.
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High Power Pulsed Laser Diodes 1550-Series
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These PLDs operate at high power, yet in the eye-safe range of 1550 nm. Common night-vision goggles cannot detect this wavelength, which make them particularly well suited for military laser rangefinders or friend/foe identification.

Specifications
Output Power (avg): up to 40 W
Wavelength: 1.55 um
Pulse Duration: 150-200ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
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High-End and Low-Cost Pulsed Laser Diodes 905-Series
Laser Components USA, Inc.
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High-End and Low-Cost Pulsed Laser Diodes 905-Series
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LASER COMPONENTS 905-Series are available at 905 nm wavelength. They are highly reliable, possess excellent overdrive capabilities, and feature optimal thermal stability at a very precise chip alignment inside the housing.

Specifications
Output Power (avg): up to 650 W
Wavelength: 0.905 um
Pulse Duration: 2-200ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
Inquire Price