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Page 6 - Pulsed Semiconductor Lasers

DL-CLS509B-S1550 Ultra Narrow Linewidth Laser
DenseLight Semiconductors
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DL-CLS509B-S1550 Ultra Narrow Linewidth Laser
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DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating, offering very stable performance of lasing wavelength, narrow spectral linewidth and excellent SMSR. The ...

Specifications
Output Power (avg): 0.05 W
Wavelength: 1.550 um
Pulse Duration: 00-00ns
Tuning Range Around Center Wavelength: Not Applicable
Packaging Option: BTF
Data Sheet
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DL-CLS409D-S1383 Ultra Narrow Linewidth Laser
DenseLight Semiconductors
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DL-CLS409D-S1383 Ultra Narrow Linewidth Laser
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DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating, offering very stable performance of lasing wavelength, narrow spectral linewidth and excellent SMSR. The ...

Specifications
Output Power (avg): 0.04 W
Wavelength: 1.383 um
Pulse Duration: 00-00ns
Tuning Range Around Center Wavelength: Not Applicable
Packaging Option: DIL
Data Sheet
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DL-CLS409B-S1383 Ultra Narrow Linewidth Laser
DenseLight Semiconductors
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DL-CLS409B-S1383 Ultra Narrow Linewidth Laser
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DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating, offering very stable performance of lasing wavelength, narrow spectral linewidth and excellent SMSR. The ...

Specifications
Output Power (avg): 0.04 W
Wavelength: 1.383 um
Pulse Duration: 00-00ns
Tuning Range Around Center Wavelength: Not Applicable
Packaging Option: BTF
Data Sheet
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DL-CLS309D-S1260 Ultra Narrow Linewidth Laser
DenseLight Semiconductors
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DL-CLS309D-S1260 Ultra Narrow Linewidth Laser
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DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating. The as-built lasing wavelength can be specified precisely to 1nm, and further precision (down to picometer ...

Specifications
Output Power (avg): 0.03 W
Wavelength: 1.260 um
Pulse Duration: 00-00ns
Tuning Range Around Center Wavelength: Not Applicable
Packaging Option: DIL
Data Sheet
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DL-CLS309B-S1260 Ultra Narrow Linewidth Laser
DenseLight Semiconductors
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DL-CLS309B-S1260 Ultra Narrow Linewidth Laser
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DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating. The as-built lasing wavelength can be specified precisely to 1nm, and further precision (down to picometer ...

Specifications
Output Power (avg): 0.03 W
Wavelength: 1.260 um
Pulse Duration: 00-00ns
Tuning Range Around Center Wavelength: Not Applicable
Packaging Option: BTF
Data Sheet
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CAVILUX Smart UHS System
Cavitar Ltd.
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CAVILUX Smart UHS System
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For ultra-high-speed imaging

Specifications
Output Power (avg): 200 - 500 W
Wavelength: 0.640 or 0.810 um
Pulse Duration: 10-10000ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
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CAVILUX Smart System
Cavitar Ltd.
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CAVILUX Smart System
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For high-speed imaging and monitoring

Specifications
Output Power (avg): 200 - 500 W W
Wavelength: 0.640 or 0.810 um
Pulse Duration: 10-10000ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
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CAVILUX HF UHS System
Cavitar Ltd.
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CAVILUX HF UHS System
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For ultra-high-speed imaging

Specifications
Output Power (avg): 280 or 500 W W
Wavelength: 0.640 or 0.810 um
Pulse Duration: 10-10000ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
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CAVILUX HF System
Cavitar Ltd.
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CAVILUX HF System
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Boost for high-speed imaging

Specifications
Output Power (avg): 280 or 500 W
Wavelength: 0.640 or 0.810 um
Pulse Duration: 10-10000ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
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CAT/TEC-055-473-20 ns Pulsed Diode Laser
Sacher Lasertechnik GmbH
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CAT/TEC-055-473-20 ns Pulsed Diode Laser
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Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications
Output Power (avg): 0.020 W
Wavelength: 0.473 um
Pulse Duration: 5-15ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
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CAT/TEC-055-445-50 ns Pulsed Diode Laser
Sacher Lasertechnik GmbH
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CAT/TEC-055-445-50 ns Pulsed Diode Laser
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Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications
Output Power (avg): 0.050 W
Wavelength: 0.445 um
Pulse Duration: 5-15ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
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CAT/TEC-055-405-120 ns Pulsed Diode Laser
Sacher Lasertechnik GmbH
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CAT/TEC-055-405-120 ns Pulsed Diode Laser
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Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications
Output Power (avg): 0.120 W
Wavelength: 0.405 um
Pulse Duration: 5-15ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
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CAT/TEC-055-405-55 ns Pulsed Diode Laser
Sacher Lasertechnik GmbH
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CAT/TEC-055-405-55 ns Pulsed Diode Laser
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Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications
Output Power (avg): 0.055 W
Wavelength: 0.405 um
Pulse Duration: 5-15ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
Inquire Price
CAT/TEC-055-375-20 ns Pulsed Diode Laser
Sacher Lasertechnik GmbH
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CAT/TEC-055-375-20 ns Pulsed Diode Laser
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Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications
Output Power (avg): 0.02 W
Wavelength: 0.375 um
Pulse Duration: 5-15ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
Inquire Price
MC7803M-7A15 Low Power Diode Lasers
Monocrom
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MC7803M-7A15 Low Power Diode Lasers
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Modulatable & focusable laser diode module at 780nm <1mW

Specifications
Output Power (avg): 0.00093 W
Wavelength: 0.78 um
Pulse Duration: 1700-1700ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
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DPGEW1S03H 905 nm Pulsed Semiconductor Laser
Pacer USA LLC
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DPGEW1S03H 905 nm Pulsed Semiconductor Laser
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Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 00-00ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 13 W
Data Sheet
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PGEW1S03H 905 nm Pulsed Semiconductor Laser
Pacer USA LLC
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PGEW1S03H 905 nm Pulsed Semiconductor Laser
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Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 20-20ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 6.5 W
Data Sheet
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QPGEW1S09H 905 nm Pulsed Semiconductor Laser
Pacer USA LLC
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QPGEW1S09H 905 nm Pulsed Semiconductor Laser
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Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 20-20ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 85 W
Data Sheet
Inquire Price
TPGEW1S09H 905 nm Pulsed Semiconductor Laser
Pacer USA LLC
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TPGEW1S09H 905 nm Pulsed Semiconductor Laser
Compare
Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 20-20ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 70 W
Data Sheet
Inquire Price
DPGEW1S09H 905 nm Pulsed Semiconductor Laser
Pacer USA LLC
Add to watch list
DPGEW1S09H 905 nm Pulsed Semiconductor Laser
Compare
Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 20-20ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 45 W
Data Sheet
Inquire Price