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Page 6 - Pulsed Semiconductor Lasers

DL-CLS259B-S1648 Ultra Narrow Linewidth Laser
DenseLight Semiconductors
DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating, offering very stable performance of lasing wavelength, narrow spectral linewidth and excellent SMSR. The ...

Specifications

Output Power (avg): 0.025 W
Wavelength: 1.648 um
Pulse Duration: 00-00ns
Tuning Range Around Center Wavelength: Not Applicable
Packaging Option: BTF
DL-CLS509B-S1550 Ultra Narrow Linewidth Laser
DenseLight Semiconductors
DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating, offering very stable performance of lasing wavelength, narrow spectral linewidth and excellent SMSR. The ...

Specifications

Output Power (avg): 0.05 W
Wavelength: 1.550 um
Pulse Duration: 00-00ns
Tuning Range Around Center Wavelength: Not Applicable
Packaging Option: BTF
DL-CLS409D-S1383 Ultra Narrow Linewidth Laser
DenseLight Semiconductors
DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating, offering very stable performance of lasing wavelength, narrow spectral linewidth and excellent SMSR. The ...

Specifications

Output Power (avg): 0.04 W
Wavelength: 1.383 um
Pulse Duration: 00-00ns
Tuning Range Around Center Wavelength: Not Applicable
Packaging Option: DIL
DL-CLS409B-S1383 Ultra Narrow Linewidth Laser
DenseLight Semiconductors
DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating, offering very stable performance of lasing wavelength, narrow spectral linewidth and excellent SMSR. The ...

Specifications

Output Power (avg): 0.04 W
Wavelength: 1.383 um
Pulse Duration: 00-00ns
Tuning Range Around Center Wavelength: Not Applicable
Packaging Option: BTF
DL-CLS309D-S1260 Ultra Narrow Linewidth Laser
DenseLight Semiconductors
DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating. The as-built lasing wavelength can be specified precisely to 1nm, and further precision (down to picometer ...

Specifications

Output Power (avg): 0.03 W
Wavelength: 1.260 um
Pulse Duration: 00-00ns
Tuning Range Around Center Wavelength: Not Applicable
Packaging Option: DIL
DL-CLS309B-S1260 Ultra Narrow Linewidth Laser
DenseLight Semiconductors
DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating. The as-built lasing wavelength can be specified precisely to 1nm, and further precision (down to picometer ...

Specifications

Output Power (avg): 0.03 W
Wavelength: 1.260 um
Pulse Duration: 00-00ns
Tuning Range Around Center Wavelength: Not Applicable
Packaging Option: BTF
For ultra-high-speed imaging

Specifications

Output Power (avg): 200 - 500 W
Wavelength: 0.640 or 0.810 um
Pulse Duration: 10-10000ns
Tuning Range Around Center Wavelength: Not Applicable
For high-speed imaging and monitoring

Specifications

Output Power (avg): 200 - 500 W W
Wavelength: 0.640 or 0.810 um
Pulse Duration: 10-10000ns
Tuning Range Around Center Wavelength: Not Applicable
For ultra-high-speed imaging

Specifications

Output Power (avg): 280 or 500 W W
Wavelength: 0.640 or 0.810 um
Pulse Duration: 10-10000ns
Tuning Range Around Center Wavelength: Not Applicable
Boost for high-speed imaging

Specifications

Output Power (avg): 280 or 500 W
Wavelength: 0.640 or 0.810 um
Pulse Duration: 10-10000ns
Tuning Range Around Center Wavelength: Not Applicable
CAT/TEC-055-473-20 ns Pulsed Diode Laser
Sacher Lasertechnik GmbH
Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications

Output Power (avg): 0.020 W
Wavelength: 0.473 um
Pulse Duration: 5-15ns
Tuning Range Around Center Wavelength: Not Applicable
CAT/TEC-055-445-50 ns Pulsed Diode Laser
Sacher Lasertechnik GmbH
Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications

Output Power (avg): 0.050 W
Wavelength: 0.445 um
Pulse Duration: 5-15ns
Tuning Range Around Center Wavelength: Not Applicable
CAT/TEC-055-405-120 ns Pulsed Diode Laser
Sacher Lasertechnik GmbH
Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications

Output Power (avg): 0.120 W
Wavelength: 0.405 um
Pulse Duration: 5-15ns
Tuning Range Around Center Wavelength: Not Applicable
CAT/TEC-055-405-55 ns Pulsed Diode Laser
Sacher Lasertechnik GmbH
Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications

Output Power (avg): 0.055 W
Wavelength: 0.405 um
Pulse Duration: 5-15ns
Tuning Range Around Center Wavelength: Not Applicable
CAT/TEC-055-375-20 ns Pulsed Diode Laser
Sacher Lasertechnik GmbH
Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications

Output Power (avg): 0.02 W
Wavelength: 0.375 um
Pulse Duration: 5-15ns
Tuning Range Around Center Wavelength: Not Applicable
DPGEW1S03H 905 nm Pulsed Semiconductor Laser
Pacer USA LLC
Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 00-00ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 13 W
PGEW1S03H 905 nm Pulsed Semiconductor Laser
Pacer USA LLC
Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 20-20ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 6.5 W
QPGEW1S09H 905 nm Pulsed Semiconductor Laser
Pacer USA LLC
Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 20-20ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 85 W
TPGEW1S09H 905 nm Pulsed Semiconductor Laser
Pacer USA LLC
Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 20-20ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 70 W
DPGEW1S09H 905 nm Pulsed Semiconductor Laser
Pacer USA LLC
Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 20-20ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 45 W