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Page 7 - Pulsed Semiconductor Lasers

QPGAx2S03H Pulsed Laser Diodes
Pacer USA LLC
Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 58 W
TPGAx2S09H Pulsed Laser Diodes
Pacer USA LLC
Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 150 W
TPGAx2S03H Pulsed Laser Diodes
Pacer USA LLC
Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 45 W
QPGAx1S09H Pulsed Laser Diodes
Pacer USA LLC
Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 90 W
QPGAx1S03H Pulsed Laser Diodes
Pacer USA LLC
Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 30 W
TPGAx1S09H Pulsed Laser Diodes
Pacer USA LLC
Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 75 W
TPGAx1S03H Pulsed Laser Diodes
Pacer USA LLC
Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 23 W
DPGAx1S09H Pulsed Laser Diodes
Pacer USA LLC
Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 50 W
DPGAx1S03H Pulsed Laser Diodes
Pacer USA LLC
Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 16 W
PGAx1S09H Pulsed Laser Diodes
Pacer USA LLC
Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 25 W
PGAx1S03H Pulsed Laser Diodes
Pacer USA LLC
Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications

Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 8 W
NL742 Ultra-stable Nanosecond Laser
EKSPLA
The main feature of NL740 series is the output of ultra-stable tunable duration (2 – 10 ns) narrow bandwidth nanosecond pulses based on temporally driven CW diode laser seeder and amplification stages. Start of the system is the single mode DFB laser with temporal output power modulator. Such front-end ensures reliable ...

Specifications

Output Power (avg): 0.01 W
Wavelength: 1.064 um
Pulse Duration: 3-10ns
Tuning Range Around Center Wavelength: Not Applicable
NL740 Ultra-stable Nanosecond Laser
EKSPLA
The main feature of NL740 series is the output of ultra-stable tunable duration (2 – 10 ns) narrow bandwidth nanosecond pulses based on temporally driven CW diode laser seeder and amplification stages. Start of the system is the single mode DFB laser with temporal output power modulator. Such front-end ensures reliable ...

Specifications

Output Power (avg): 0.0002 W
Wavelength: 1.064 um
Pulse Duration: 3-10ns
Tuning Range Around Center Wavelength: Not Applicable
LASER COMPONENTS Canada has developed a hybrid pulsed laser diode with the currently shortest pulse duration in the world. In one second, the QuickSwitch PLD generates up to 200,000 laser pulses with a typical duration of 2.5 ns. Depending on the operating voltage, it achieves an optical peak power of up to 89 watts. A high current ...

Specifications

Output Power (avg): 89 W
Wavelength: 0.905 um
Pulse Duration: 2.4-3ns
Tuning Range Around Center Wavelength: Not Applicable
These PLDs operate at high power, yet in the eye-safe range of 1550 nm. Common night-vision goggles cannot detect this wavelength, which make them particularly well suited for military laser rangefinders or friend/foe identification.

Specifications

Output Power (avg): up to 40 W
Wavelength: 1.55 um
Pulse Duration: 150-200ns
Tuning Range Around Center Wavelength: Not Applicable
LASER COMPONENTS 905-Series are available at 905 nm wavelength. They are highly reliable, possess excellent overdrive capabilities, and feature optimal thermal stability at a very precise chip alignment inside the housing.

Specifications

Output Power (avg): up to 650 W
Wavelength: 0.905 um
Pulse Duration: 2-200ns
Tuning Range Around Center Wavelength: Not Applicable
Laser package contains a 905 pulsed laser diode (CVD 46) and a 650nm laser diode mounted side by side(distance between the centers of emission = 720um) on a common platform (+, case, positive). Theemission pattern of the two laser die will be centered on the package axis to within +/- 0.010 in.

Specifications

Output Power (avg): 3 W
Wavelength: 0.905 um
Pulse Duration: 100-100ns
Tuning Range Around Center Wavelength: <= 200nm
Spectral Width FWHM: 5 nm
OSI Laser Diode Inc. provides an extremely high brightness CVLL 1550nm pulsed laser diode capable of up to 75 Wattsoutput power. The CVLL devices are well suited to most range finding applications requiring “eye safe” operation.

Specifications

Output Power (avg): 125 W
Wavelength: 1.550 um
Pulse Duration: 150-150ns
Tuning Range Around Center Wavelength: <= 200nm
Peak Power (min): 10-125W
The LHCVN series incorporates a pulsed laser firing circuit into the same package as the laser diode. The hybridization of the driver permits much narrower pulse widths and faster rise times at lower voltage requirements than discretelaser drivers. The LHCVN series is compatible with all OSI LaserDiode, Inc standard MOCVD laser ...

Specifications

Output Power (avg): 200 W
Wavelength: 0.905 um
Pulse Duration: 10-10ns
Tuning Range Around Center Wavelength: <= 200nm
Emitter Area: 200 X 10 - 200 X 480 um
Stable Output from -40°C to +85°CSingle & Stacked Devices up to 375WFiber Coupled Devices up to 188WHigh Reliability / High Efficiency

Specifications

Output Power (avg): 375 W
Wavelength: 0.915 um
Pulse Duration: 100-100ns
Tuning Range Around Center Wavelength: <= 200nm
Peak Wavelength: 895-915nm