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InGaAs Avalanche Photodiodes (APD)

Introducing the CR80AH-1550-200M, a cutting-edge solution for high-speed, ultra-low light detection in various applications such as laser range finding, LIDAR, and free space communication. This advanced device combines a 500μm InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier to deliver exceptional performance and ...

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 900-1700nm
Operating Temperature: -40 to +85 degC
Storage Temperature: -55 to +100 degC
This is a high sensitivity photodetector that is available both in chip form and in ROSA (Receiver Sub Assembly) form. It has state of the art performance with competitive pricing.

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 1330 nm
Operational Wavelength Range: 900-1650nm
The CR200AH-1550-100M-00 is a versatile preamplifier module designed for ultra-low light detection in high-speed applications, including laser range finding, LIDAR, and free space communication. Equipped with a 200um InGaAs Avalanche Photodiode and a hybrid preamplifier, this module delivers high sensitivity of at least 400kV/W, high ...

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 1500 nm
Operational Wavelength Range: 1100-1700nm
Reverse Breakdown Voltage: 70 V
Operating Temperature: -40 - +85 degC
The CR3000AH-905-50M is an advanced photodiode designed to deliver exceptional performance in high-speed, ultra-low light detection applications. With its integrated 3mm SI Avalanche Photodiode (APD) and hybrid preamplifier, this device sets new standards in sensitivity, bandwidth, and reliability. The CR3000AH-905-50M is ...

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 905 nm
Operational Wavelength Range: 400-1100nm
Active Diameter: 3 mm
Reverse Breakdown Voltage (Vbr): 130 - 250 V
lnGaAs Avalanche Photodiode APD0200-17-D
ANDANTA GmbH
lnGaAs Avalanche Photodiodes.

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 950 nm
Operational Wavelength Range: 950-1650nm
nortus Optronic Photodiodes
DOEHRER Elektrooptik GmbH
With us you will find high quality InGaAs photodiodes with high clock rates, low dark currents and low capacitance with active areas of 50 to 5000nm. Different housings are available and of course we can also offer customer-specific solutions.

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): -- nm
Operational Wavelength Range: 50-5000nm
InGaAs Avalanche Photodiode 2.5 Gbps
Go!Foton
Go!Foton’s Avalanche Photodiode (APD), front-illuminate type is suitable for 2.5 Gbps applications in G-PON/Ge-PON.  This InGaAs APD has a planer structure for high reliability.

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 1000-1625nm
InGaAs Avalanche Photodiode KPDEA005-56F
Kyosemi Opto America Corp
InGaAs avalanche photodiode.

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 1310 nm
Operational Wavelength Range: 1310-1550nm
InGaAs Avalanche Photodiodes KPDEA007-56F
Kyosemi Opto America Corp
InGaAs avalanche photodiode.

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 1310 nm
Operational Wavelength Range: 1310-1550nm
InGaAs Avalanche Photodiodes
GPD Optoelectronics Corp
InGaAs Avalanche Photodiodes

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 1300 nm
Operational Wavelength Range: 1000-1630nm
The ultra-low-noise H1-series is supplied in a 12-pin TO-8 package and features a built-in temperature sensor to allow temperature compensation. The maximum bandwidth is 1 MHz to 25 MHz depending on the version.

Specifications

APD Type: Si, InGaAs
Operational Wavelength (Typical): 400 - 1100 nm
Operational Wavelength Range: 900-1700nm
The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630nm wavelength range. The peak responsitivity at 1550 nm is ideally suited to eye-safe range finding applications.

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 1000-1630nm
The OSI Laser Diode Inc LAPD 3030-SMR is a 30um InGaAs APD housed in a 3 pin coaxial packagecoupled to an SMF pigtail. The low noise, high sensitivity and broad Vbr curve make LAPD 3030-SMR idealfor OTDR\'s, range finders, and high sensitivity line receivers. Other breakdown voltage ranges available onrequest. The LAPD 3030 coaxial ...

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 1260-1650nm
Operating Temp. Range: -40-85oC
Active Area Diameter: 30 UM
The LAPD 1550-30R is a 30um InGaAs mesa structure APD housed in a hermetic 3 pin TO46 Packagewith lens cap. The low noise, high sensitivity and broad Vbr curve make the LAPD 1550-30R APD idealfor use in range finders and high sensitivity line receivers. The device is RoHS compliant.

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 1260-1650nm
Responsivity: 1 A/W
Dark Current: 30 nA
The LAPD 1550-200R is a 200um InGaAs APD housed in a hermetic 3 pin TO46 Package. The low noise and high sensitivityof the LAPD 1550-200R APD make it ideal for use in range finding, sensors, OTDRs and any other low light level detectionapplication.

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 1250 nm
Operational Wavelength Range: 800-1700nm
Dark Current: 20 nA
Bandwidth: 200 MHz
On FindLight marketplace you will find 17 different InGaAs Avalanche Photodiodes (APD) from suppliers around the world. With just a few clicks you can compare different InGaAs Avalanche Photodiodes (APD) and get accurate price quotes based on your needs and quantity required. Note that some wholesale suppliers may offer discounts for large quantities. From any product page you can directly contact any vendor within seconds.