InGaAs Avalanche Photodiode KPDEA005-56F
Description
InGaAs avalanche photodiode.
InGaAs Avalanche Photodiode KPDEA005-56F
Specifications |
|
|---|---|
| APD Type: | InGaAs |
| Operational Wavelength (Typical): | 1310 nm |
| Operational Wavelength Range: | 1310-1550nm |
Features
High speed (Up to 1.25Gbps)
Low dark current
High sensitivity
Applications
SONET
GE-PON
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Ships from:
United States
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On FindLight:
External Vendor
Claim Kyosemi Opto America Corp Page to edit and add data
Frequently Asked Questions
The maximum speed of the KPDEA005-56F is up to 1.25Gbps.
The operating temperature range for the KPDEA005-56F is -40 to +85 degrees Celsius.
The dark current of the KPDEA005-56F is between 10 and 50 nA.
The breakdown voltage of the KPDEA005-56F is between 35 and 55 V.
The responsivity of the KPDEA005-56F is 0.85 to 0.95 A/W at 1310nm and 0.95 to 1.05 A/W at 1550nm.
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