InGaAs Avalanche Photodiodes
Description
InGaAs Avalanche Photodiodes
InGaAs Avalanche Photodiodes
Specifications |
|
|---|---|
| APD Type: | InGaAs |
| Operational Wavelength (Typical): | 1300 nm |
| Operational Wavelength Range: | 1000-1630nm |
Features
- Active Diameter (80µm to 350µm)
- 900nm to 1650nm Spectral Response
- Linear Operation
- Low Dark Current for High Sensitivity
- Low Capacitance for High Speed
- Fiber Pigtail (Single or Multi Mode) including Hi-Reliability or Hi-Rel Pigtail
- Packages (TO-46 and Sub-mount with Ball Lens Option)
Applications
- Free Space Optics (FSO)
- LIDAR/LADAR
- High Sensitivity Photometry
- Optical Communications
- Optical Time Domain Reflectometer (OTDR)
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Ships from:
United States
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Frequently Asked Questions
The InGaAs Avalanche Photodiode can be used in a variety of applications, including free space optics (FSO), LIDAR/LADAR, high sensitivity photometry, optical communications, and optical time domain reflectometer (OTDR).
The InGaAs Avalanche Photodiode features an active diameter ranging from 80µm to 350µm, a spectral response of 900nm to 1650nm, linear operation, low dark current for high sensitivity, low capacitance for high speed, and fiber pigtail (single or multi-mode) including hi-reliability or hi-rel pigtail packages (TO-46 and sub-mount with ball lens option).
An InGaAs Avalanche Photodiode is a type of photodiode that is designed to operate in the infrared range of the electromagnetic spectrum.
The bandwidth of the InGaAs Avalanche Photodiode ranges from 1 GHz to 3 GHz at M=5, 1 GHz to 2 GHz at M=10, and 1.5 GHz to 2.5 GHz at M=20.
The maximum storage temperature for the InGaAs Avalanche Photodiode is -40ºC to 85ºC.