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Avalanche Photodiodes (APD)

Conquer Eo Modulator Avalanche Photodiodes Detector | PIN Photodetector | APD Photodetector
Beijing Conquer Photonics Co., Ltd.
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Conquer Eo Modulator Avalanche Photodiodes Detector | PIN Photodetector | APD Photodetector
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PR-200M series photodetector APD Photodetector, integrates high-speed PIN detector and low noise amplifier, fiber or free space coupling, SMA connector output, with high gain, high sensitivity, gain flat and other characteristics, mainly used for analog optical signal reception and fiber optic sensing systems.

Specifications
APD Type: Other
Operational Wavelength (Typical): - nm
Operational Wavelength Range: 300-1650nm
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800um SI APD Preamplifier Module
CSRayzer Optical Technology
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800um SI APD Preamplifier Module
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The CR800AH-1064-150M is a high-performance device designed for high-speed, ultra-low light detection applications such as laser range finding, LIDAR, and free space communication. It features an 800um SI Avalanche Photodiode (APD) with a hybrid preamplifier for enhanced signal processing capabilities. Packed in a TO8 package with a ...

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1064 nm
Operational Wavelength Range: 400-1100nm
Active Diameter: 800 um
Reverse Breakdown Voltage (Vbr): 350 - 460 V
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80um InGaAs APD Preamplifier Module
CSRayzer Optical Technology
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80um InGaAs APD Preamplifier Module
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Introducing the CR80AH-1550-200M, a cutting-edge solution for high-speed, ultra-low light detection in various applications such as laser range finding, LIDAR, and free space communication. This advanced device combines a 500μm InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier to deliver exceptional performance and ...

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 900-1700nm
Operating Temperature: -40 to +85 degC
Storage Temperature: -55 to +100 degC
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InPhOE Tech 10G InGaAs Avalanche Photodiode ORS35A-10
InPhOE Technologies, Inc.
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InPhOE Tech 10G InGaAs Avalanche Photodiode ORS35A-10
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This is a high sensitivity photodetector that is available both in chip form and in ROSA (Receiver Sub Assembly) form. It has state of the art performance with competitive pricing.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1330 nm
Operational Wavelength Range: 900-1650nm
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500um InGaAs APD Preamplifier Module
CSRayzer Optical Technology
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500um InGaAs APD Preamplifier Module
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The 500μm InGaAs APD Preamplifier Module, specifically the CR500AH-1550-70M, is designed for high-speed, ultra-low light detection in various applications such as laser range finding, LIDAR, and free space communication. This module incorporates a 500μm InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, offering ...

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 1100-1700nm
Active Diameter: 500 um
Reverse Breakdown Voltage (Vbr): 30 - 70 V
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200um 1550nm InGaAs APD Preamplifier for Rangefinder
CSRayzer Optical Technology
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200um 1550nm InGaAs APD Preamplifier for Rangefinder
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The CR200AH-1550-100M-00 is a versatile preamplifier module designed for ultra-low light detection in high-speed applications, including laser range finding, LIDAR, and free space communication. Equipped with a 200um InGaAs Avalanche Photodiode and a hybrid preamplifier, this module delivers high sensitivity of at least 400kV/W, high ...

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1500 nm
Operational Wavelength Range: 1100-1700nm
Reverse Breakdown Voltage: 70 V
Operating Temperature: -40 - +85 degC
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3mm SI APD Preamplifier Module
CSRayzer Optical Technology
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3mm SI APD Preamplifier Module
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The CR3000AH-905-50M is an advanced photodiode designed to deliver exceptional performance in high-speed, ultra-low light detection applications. With its integrated 3mm SI Avalanche Photodiode (APD) and hybrid preamplifier, this device sets new standards in sensitivity, bandwidth, and reliability. The CR3000AH-905-50M is ...

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 905 nm
Operational Wavelength Range: 400-1100nm
Active Diameter: 3 mm
Reverse Breakdown Voltage (Vbr): 130 - 250 V
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lnGaAs Avalanche Photodiode APD0200-17-D
ANDANTA GmbH
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lnGaAs Avalanche Photodiode APD0200-17-D
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lnGaAs Avalanche Photodiodes.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 950 nm
Operational Wavelength Range: 950-1650nm
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InGaAs Avalanche Photodiode 2.5 Gbps
Go!Foton
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InGaAs Avalanche Photodiode 2.5 Gbps
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Go!Foton’s Avalanche Photodiode (APD), front-illuminate type is suitable for 2.5 Gbps applications in G-PON/Ge-PON.  This InGaAs APD has a planer structure for high reliability.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 1000-1625nm
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InGaAs Avalanche Photodiode KPDEA005-56F
Kyosemi Opto America Corp
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InGaAs Avalanche Photodiode KPDEA005-56F
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InGaAs avalanche photodiode.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1310 nm
Operational Wavelength Range: 1310-1550nm
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InGaAs Avalanche Photodiodes KPDEA007-56F
Kyosemi Opto America Corp
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InGaAs Avalanche Photodiodes KPDEA007-56F
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InGaAs avalanche photodiode.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1310 nm
Operational Wavelength Range: 1310-1550nm
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Avalanche Photo-Detector MTAPD-06-005
Marktech Optoelectronics Inc
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Avalanche Photo-Detector MTAPD-06-005
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Marktech Si APD’s offer low-level light and short pulse detection of wavelengths between 400 nm and 1100 nm. They feature a choice of either a 230 μm or 500 μm active area; optical sensitivity optimizations for 800 nm or 905 nm peak response; an internal gain mechanism; high gain at low bias voltage; extremely fast rise times as low ...

Specifications
APD Type: Si
Operational Wavelength (Typical): 800 nm
Operational Wavelength Range: 400-1100nm
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Avalanche Photo-Detector MTAPD-06-001
Marktech Optoelectronics Inc
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Avalanche Photo-Detector MTAPD-06-001
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Marktech Si APD’s offer low-level light and short pulse detection of wavelengths between 400 nm and 1100 nm. They feature a choice of either a 230 μm or 500 μm active area; optical sensitivity optimizations for 800 nm or 905 nm peak response; an internal gain mechanism; high gain at low bias voltage; extremely fast rise times as low ...

Specifications
APD Type: Si
Operational Wavelength (Typical): 800 nm
Operational Wavelength Range: 400-1100nm
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Avalanche Photo=Detector MTAPD-05-003
Marktech Optoelectronics Inc
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Avalanche Photo=Detector MTAPD-05-003
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Marktech Si APD’s offer low-level light and short pulse detection of wavelengths between 400 nm and 1100 nm. They feature a choice of either a 230 μm or 500 μm active area; optical sensitivity optimizations for 800 nm or 905 nm peak response; an internal gain mechanism; high gain at low bias voltage; extremely fast rise times as low ...

Specifications
APD Type: Si
Operational Wavelength (Typical): 800 nm
Operational Wavelength Range: 400-1100nm
Data Sheet
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InGaAs Avalanche Photodiodes
GPD Optoelectronics Corp
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InGaAs Avalanche Photodiodes
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InGaAs Avalanche Photodiodes

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1300 nm
Operational Wavelength Range: 1000-1630nm
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Ge Avalanche Photodiodes
GPD Optoelectronics Corp
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Ge Avalanche Photodiodes
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Avalanche Photodiodes

Specifications
APD Type: Ge
Operational Wavelength (Typical): 1300 nm
Operational Wavelength Range: 800-1800nm
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H1-Series APD Receiver with Integrated Pre-amplifier and Temperature Sensor
Laser Components USA, Inc.
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H1-Series APD Receiver with Integrated Pre-amplifier and Temperature Sensor
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The ultra-low-noise H1-series is supplied in a 12-pin TO-8 package and features a built-in temperature sensor to allow temperature compensation. The maximum bandwidth is 1 MHz to 25 MHz depending on the version.

Specifications
APD Type: Si, InGaAs
Operational Wavelength (Typical): 400 - 1100 nm
Operational Wavelength Range: 900-1700nm
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Silicon Avalanche Photodiodes SAE-, SAR-, SARF-Series
Laser Components USA, Inc.
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Silicon Avalanche Photodiodes SAE-, SAR-, SARF-Series
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Silicon Avalanche Photodiodes are used in the wavelength range between 250 nm and 1100 nm. The avalanche effect of these photodiodes make them well suited for the detection of extremely weak light intensities. Different versions are optimized for each of their own wavelength ranges.

Specifications
APD Type: Si
Operational Wavelength (Typical): 250 - 1100 nm
Operational Wavelength Range: 250-1100nm
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InGaAs Avalanche Photodiode IAG-Series
Laser Components USA, Inc.
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InGaAs Avalanche Photodiode IAG-Series
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The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630nm wavelength range. The peak responsitivity at 1550 nm is ideally suited to eye-safe range finding applications.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 1000-1630nm
Data Sheet
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Low-Cost Silicon Avalanche Photodiode SAH-Series
Laser Components USA, Inc.
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Low-Cost Silicon Avalanche Photodiode SAH-Series
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The SAH230M2 and SAH500M2 are low-cost, general purpose silicon APDs in a miniature SMD package. Responsivity is optimized for 850nm and 905nm rangefinders.

Specifications
APD Type: Si
Operational Wavelength (Typical): 905 nm
Operational Wavelength Range: 400-1000nm
Data Sheet
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Frequently Asked Questions

An Avalanche Photodiode (APD) is a highly sensitive semiconductor device that operates in the reverse-biased mode to achieve internal multiplication of carriers.

APDs offer higher sensitivity, lower noise, and faster response compared to standard photodiodes. They are commonly used in low-light and high-speed applications.

APDs are available for various wavelength ranges, including UV, visible, and near-infrared (NIR). Make sure to select an APD that matches your desired wavelength.

Consider factors such as wavelength range, responsivity, dark current, gain, and operating voltage to select the appropriate APD for your specific application.

Yes, many suppliers offer custom configurations and arrays of APDs to meet specific requirements. Contact the suppliers directly to discuss your custom needs.

There are 24 different Avalanche Photodiodes (APD) from suppliers and manufacturers listed in this category. In just a few clicks you can compare different Avalanche Photodiodes (APD) with each other and get an accurate quote based on your needs and specifications. Please note that the prices of Avalanche Photodiodes (APD) vary significantly for different products based on various factors including technical parameters, features, brand name, etc. Please contact suppliers directly to inquire about the details and accurate pricing information for any product model. Simply navigate to the product page of interest and use the orange button to directly reach out to the respective supplier with one click.

Did You know?

Avalanche photodiode (APD) finds its application in laser range finders, optical tomography, fiber optic communication systems, LIDAR, fluorescence detection, particle sizing and other photon counting situations. It has the advantage of high sensitivity and high response time. APDs are generally recommended for high bandwidth applications or where internal gain is needed to overcome high preamplifier noise. APDs are commercially available that span the wavelength range from 300nm to 1700nm. Silicon APDs can be used at wavelengths of 300nm-1100nm, Germanium: 800nm-1600nm, and InGaAs: 900nm-1700nm. Quantum efficiency, total leakage current and noise are important factors in choosing the right APD for your application.
Read more in our Blog
External links:
1 - Applications of Si photodiodes