Gentec-EO High Power Detector PH100-SI-HA-OD2-D0
Description
The Gentec-EO Photo Detector family includes nine photo detectors sensors.
The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium photodiode. The PE3B-In detectors use a InGaAs photodiode.
Gentec-EO High Power Detector PH100-SI-HA-OD2-D0
Specifications |
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Diode Type: | Si |
Wavelength Of Operation: | 630 - 1080 nm |
Features
All detector heads are 27.4mm thick by 38.1 mm in diameter.
The PH and PE series are supplied with a 180 cm long flexible cable terminated with a DB-15 "intelligent" male connector, for use with Gentec-EO Monitors.
Applications
- Laser power detection
- Laser optics
- Spectroscopy
- Metrology
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
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Ships from:
Canada
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Sold by:
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On FindLight:
since 2014
Frequently Asked Questions
The Gentec-EO High Power Detector PH100-SI-HA-OD2-D0 has an aperture diameter of 10 mm, dimensions of 38.1Ø x 36D mm, and weighs 0.14 kg. The distance to the sensor face is 13.7 mm.
The Gentec-EO High Power Detector PH100-SI-HA-OD2-D0 is used for laser power detection, laser optics, spectroscopy, and metrology.
The maximum average power of the Gentec-EO High Power Detector PH100-SI-HA-OD2-D0 is 750 mW.
The noise equivalent power of the Gentec-EO High Power Detector PH100-SI-HA-OD2-D0 is 1 nW.
The spectral range of the Gentec-EO High Power Detector PH100-SI-HA-OD2-D0 is 630 - 1080 nm.