HgCdTe (MCT) Photovoltaic Detector
Description
2.4 – 4.3 µm, ambient temperature, optically immersed
PVI-2TE-4-1×1-TO8-wAl2O3-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 4.0 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.
HgCdTe (MCT) Photovoltaic Detector
Specifications |
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|---|---|
| Diode Type: | HgCdTe |
| Wavelength Of Operation: | 4000 nm |
| Spectral Response: | 2.4 – 4.3 µm |
Features
High performance in 2.4 - 4.3 µm spectral range
Two-stage thermoelctrically cooled
Hyperhemiimmersion microlens technology applied
No bias required
No 1/f noise
D* better by one order of magnitude compared with the same type uncooled detector
Wide dynamic range
Quantity discounted price
Fast delivery
For pricing, technical or any other questions please contact the supplier
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
since 2022
Frequently Asked Questions
The wavelength range of the HgCdTe Photovoltaic Detector is 2.4 - 4.3 µm.
No, the detector does not require biasing.
The detectivity of the detector at the peak wavelength is ≥4.0×10^11 cm·Hz^(1/2)/W.
The sapphire window prevents unwanted interference effects.
The detector is suitable for gas detection, monitoring and analysis, breath analysis, explosion prevention, flue gas denitrification, and emission control.