High Speed InGaAs PIN Photodiode FD80W
Description
High Speed InGaAs PIN Photodiode FD80W
Specifications |
|
|---|---|
| Diode Type: | InGaAs |
| Wavelength Of Operation: | 1300 nm |
| Storage Temperature: | -40 - +100 °C |
| Responsivity: | 0.85 A/W |
| Forward Current: | 5 mA |
| Reverse Voltage: | 30 V |
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Contact Supplier
How to order?
-
Ships from:
United States
-
Sold by:
-
On FindLight:
External Vendor
Claim Fermionics Page to edit and add data
Frequently Asked Questions
The photodiode has low capacitance.
The photodiode has low dark current.
The photodiode has a planar-passivated device structure.
The diameter of the photosensitive area is 80 microns.
It is used in high-speed communication systems.
You May Also Like
Don’t have an account?
Please consider registering
NOTE: It may take up to 10 min to receive the registration verification link. For immediate assistance please use the “GUEST” option above.
Your inquiry has been received
by adding a password
Benefits of having an account:
- Save time on filling future request forms
- Track your prior Requests
- Save favorite products in your account
- Choose your contact preferences
- If you change your mind later, you may close you account with 1 click
The Leading Photonics Marketplace
Within 3-10 minutes you will receive an email with a validation link to activate your account.
If you don't receive the confirmation link soon, please let us know at contact@findlight.net
Useful quick links