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InGaAs PIN Detectors

ROF High Sensitivity Photodetector - InGaAs Photoreceiver - High Speed InGaAs Photodetector
Beijing Rofea Optoelectronics Co,. Ltd.
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ROF High Sensitivity Photodetector - InGaAs Photoreceiver - High Speed InGaAs Photodetector
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Rofea independently developed photodetector integrated photodiode and low noise amplifier circuit, while providing a variety of products, for scientific research users Provide quality product customization service, technical support and convenient after-sales service. The current product line includes: analog signal photodetector ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1000-1650 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 1-10 nA
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InGaAsPIN Balance Detector
CSRayzer Optical Technology
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InGaAsPIN Balance Detector
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Introducing the RZPD-200M-AC, a high-performing InGaAsPIN balancing detector that offers both low noise and high bandwidth for ultra-sensitive detection applications. This detector is designed with two balanced photodiodes and an ultra-low noise high-speed amplification circuit, along with a noise floor power supply, to ensure ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1550 nm
Operating Temperature: -40 to +85 degC
Storage Temperature: -55 t +100 degC
Saturation Input Optical Power: 150 uW
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300MHz Low noise and high bandwidth InGaAs PIN Balance Detector RZPD-300M-AC
CSRayzer Optical Technology
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300MHz Low noise and high bandwidth InGaAs PIN Balance Detector RZPD-300M-AC
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The RZPD-300M-AC is a low-noise, high-bandwidth InGaAsPIN balancing detector consisting of two balanced photodiodes, ultra-low noise high-speed amplification circuit, and noise floor power supply. The two photodiodes are matched to achieve an excellent common-mode rejection ratio (CMRR) for better noise reduction. It is ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: RZPD-300M-AC nm
Max Frequency Response: Other / Not specified
Active Area Size: N/A
Dark Current: N/A
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ROF Si Photodetector PR-200M Series Photodetector High-Speed PIN Detector
Beijing Rofea Optoelectronics Co,. Ltd.
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ROF Si Photodetector PR-200M Series Photodetector High-Speed PIN Detector
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ROF-PR-200M series photodetector integrates high-speed PIN detector and low noise amplifier, fiber or free space coupling, SMA connector output, with high gain, high sensitivity, gain flat and other characteristics, mainly used for analog optical signal reception and fiber optic sensing systems. Beijing Rofea Optoelectronics Co., ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850-1650 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 10-100 nA
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High Speed InGaAs PIN Photodiode FD80W
Fermionics
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High Speed InGaAs PIN Photodiode FD80W
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High-speed, low dark current, low capacitance photodiode for high-speed communication systems. The photosensitive area is 80 microns in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Storage Temperature: -40 - +100 °C
Responsivity: 0.85 A/W
Forward Current: 5 mA
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InGaAs PIN Photodiode PIN0500-17-D-TO
ANDANTA GmbH
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InGaAs PIN Photodiode PIN0500-17-D-TO
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InGaAs PIN Photodiodes.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 900 nm
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25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
Connector Optics LLC
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25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
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Our compact, top illuminated, low capacitance, high speed GaAs-based p-i-n photodiode (PD) chips and PD array chips are available as engineering samples and well suited for applications in 850 nm range optical data communicationssystems, optical interconnects, and general research and development. The PDs are available with a range ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850 nm
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InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C
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InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C
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InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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InGaAs PIN Photodiode PIN0500-17-D-T0
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN0500-17-D-T0
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InGaAs PIN Photodiode PIN0500-17-D-T0.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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Low Polarization Dependent Loss (PDL) InGaAs Photodiodes
GPD Optoelectronics Corp
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Low Polarization Dependent Loss (PDL) InGaAs Photodiodes
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Low Polarization Dependent Loss (PDL) InGaAs Photodiodes

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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Large Area InGaAs Photodiodes
GPD Optoelectronics Corp
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Large Area InGaAs Photodiodes
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Large Area InGaAs Photodiodes

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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High Speed InGaAs Photodiodes
GPD Optoelectronics Corp
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High Speed InGaAs Photodiodes
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High Speed InGaAs Photodiodes

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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Large Area InGaAs PIN Photodiodes FD3000W
Fermionics
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Large Area InGaAs PIN Photodiodes FD3000W
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 3 mm in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
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Large Area InGaAs PIN Photodiodes FD2000W
Fermionics
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Large Area InGaAs PIN Photodiodes FD2000W
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. High shunt resistance allows high sensitivity to low level optical signals. The photosensitive area is 2 mm in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
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Large Area InGaAs PIN Photodiodes FD1500W
Fermionics
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Large Area InGaAs PIN Photodiodes FD1500W
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1.5 mm in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850 nm
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Large Area InGaAs PIN Photodiodes FD1000W
Fermionics
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Large Area InGaAs PIN Photodiodes FD1000W
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1 mm in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850 nm
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High Speed InGaAs PIN Photodiodes FD500 Series
Fermionics
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High Speed InGaAs PIN Photodiodes FD500 Series
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General purpose InGaAs PIN photodiodes useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 500 microns in diameter.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
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High Speed InGaAs PIN Photodiodes FD300 Series
Fermionics
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High Speed InGaAs PIN Photodiodes FD300 Series
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General purpose InGaAs PIN photodiodes useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 300 microns in diameter.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Data Sheet
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On FindLight marketplace you will find 29 different InGaAs PIN Detectors from suppliers around the world. With just a few clicks you can compare different InGaAs PIN Detectors and get accurate price quotes based on your needs and quantity required. Note that some wholesale suppliers may offer discounts for large quantities. From any product page you can directly contact any vendor within seconds.