Page 2 - InGaAs PIN Detectors

High Speed InGaAs PIN Photodiodes FD300 Series
Fermionics
General purpose InGaAs PIN photodiodes useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 300 microns in diameter.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
High Speed InGaAs PIN Photodiodes FD150 Series
Fermionics
High-speed, low dark current, low capacitance photodiode for high speed communication systems, LANs, and FDDI applications. The 150 micron diameter photosensitive area improves coupling to multi-mode fiber using active device receptacles. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
High Speed InGaAs PIN Photodiodes FD100 Series
Fermionics
High-speed, low dark current, low capacitance photodiode for high speed communication systems, LANs, and FDDI applications. The photosensitive area is 100 microns in diameter. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
High Speed InGaAs PIN Photodiodes FD50 Series
Fermionics
Very high speed, low capacitance, low dark current photodiode for very high bit rate receiver applications. The photosensitive area is 50 microns in diameter. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
The IG22-26 are a series of panchromatic PIN photodiodes with a wavelength range covering 500 - 2600 nm, depending on the option. The series have been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: up to 2600 nm
The IG17-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 1.7um. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: up to 1700 nm
The OSI Laser Diode Inc. LDPA 0003R PINFET provides an excellent solution for optical receiver systemsthat require both high sensitivity and wide dynamic range. Applications include telecommunications lineterminatingequipment or repeaters and optical sensor systems where a user adjustable gain may bedesirable for optimizing system ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1550 nm
Bandwidth (3dB): 3 MHz
Optical Input Overload: -6 dBm
Responsivity (1550nm): 0.9 A/W
The OSI Laser Diode Inc. PINFET provides an excellent solution for optical receiver systems that require both high sensitivity andwide dynamic range. Applications include telecommunications line-terminating equipment or repeaters and optical sensor systems.The receiver package offers high reliability satisfying Telcordia specifications.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850, 1310, 1550 nm
Operating Temperature: -40-70C
Minimum Bandwidth: 5-250MHz
Suggested Data Rate: 6-350Mb/s
The OSI Laser Diode Inc. InGaAs PIN detector provides both small size and high performance in a miniature coaxial module. Designed to provide high responsivity and low leakage, LDI\\\'s detector modules exhibit low back reflection along with low polarization dependent loss (PDL). The detector module offers high reliability satisfying ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1310,1550 nm
Bandwidth: 2.5 GHz
Detector Diameter: 75 um
Responsivity: 0.8-0.9A/W
• High Sensitivity/Wide Dynamic Range• High Responsivity and Low Dark Current• InGaAs Pin Detector• 4Mb/s, 52Mb/s, 155Mb/s & 622Mb/s• Single Supply Capable• Hermetic Package

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1310/1550 nm
Dark Current: 0.5 nA
Operating Temperature: -40-80C
Detector Bias: -10 V