Large Area InGaAs PIN Photodiodes FD1000W
Description
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1 mm in diameter. Planar-passivated device structure.
Large Area InGaAs PIN Photodiodes FD1000W
Specifications |
|
|---|---|
| Diode Type: | InGaAs |
| Wavelength Of Operation: | 850 nm |
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Contact Supplier
How to order?
-
Ships from:
United States
-
Sold by:
-
On FindLight:
External Vendor
Claim Fermionics Page to edit and add data
Frequently Asked Questions
Yes, Very High Shunt Resistance devices are available upon request.
The maximum forward current is 100 mA.
The photosensitive area is 1 mm in diameter.
The shunt resistance is between 2 and 20 MΩ.
The spectral response range is from 800 nm to 1700 nm.
You May Also Like
Don’t have an account?
Please consider registering
NOTE: It may take up to 10 min to receive the registration verification link. For immediate assistance please use the “GUEST” option above.
Your inquiry has been received
by adding a password
Benefits of having an account:
- Save time on filling future request forms
- Track your prior Requests
- Save favorite products in your account
- Choose your contact preferences
- If you change your mind later, you may close you account with 1 click
The Leading Photonics Marketplace
Within 3-10 minutes you will receive an email with a validation link to activate your account.
If you don't receive the confirmation link soon, please let us know at contact@findlight.net
Useful quick links