Large Area InGaAs PIN Photodiodes FD1000W
Description
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1 mm in diameter. Planar-passivated device structure.
Large Area InGaAs PIN Photodiodes FD1000W
Specifications |
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Diode Type: | InGaAs |
Wavelength Of Operation: | 850 nm |
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Ships from:
United States
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On FindLight:
External Vendor
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Frequently Asked Questions
Yes, Very High Shunt Resistance devices are available upon request.
The maximum forward current is 100 mA.
The photosensitive area is 1 mm in diameter.
The shunt resistance is between 2 and 20 MΩ.
The spectral response range is from 800 nm to 1700 nm.
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