Large Area InGaAs PIN Photodiodes FD2000W
Description
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. High shunt resistance allows high sensitivity to low level optical signals. The photosensitive area is 2 mm in diameter. Planar-passivated device structure.
Large Area InGaAs PIN Photodiodes FD2000W
Specifications |
|
|---|---|
| Diode Type: | InGaAs |
| Wavelength Of Operation: | 1300 nm |
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Frequently Asked Questions
The capacitance ranges from 400 pF to 1000 pF.
The maximum reverse voltage is 2 V.
The photosensitive area is 2 mm in diameter.
The high shunt resistance allows high sensitivity to low level optical signals.
The spectral response range is from 800 nm to 1700 nm.
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