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Frequently Asked Questions

The electro-optical characteristics of the ODD-1 Red Enhanced Photodiode include an active area of 1mm^2, responsivity of 0.36 A/W, dark current of 251 nA, reverse breakdown voltage of 0.4 V, capacitance of 0.2 pF, rise time of 8 nsec, and series resistance of 15 Ohms.

The ODD-1 Red Enhanced Photodiode features a TO-18 package, low cost format, low dark current, and low capacitance.

The thermal parameters of the ODD-1 Red Enhanced Photodiode include a storage and operating temperature range of -55°C to 100°C, maximum junction temperature of 100°C, and lead soldering temperature of 260°C for 10 seconds.

The ODD-1 Red Enhanced Photodiode is used for OEM, industrial, and scientific applications such as metrology, spectroscopy, industrial, and laser optics.

You can find more information about the ODD-1 Red Enhanced Photodiode on the Opto Diode website at www.optodiode.com.

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