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Page 2 - PIN Detectors

HgCdTe (MCT) Photovoltaic Detector
VIGO Photonics
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HgCdTe (MCT) Photovoltaic Detector
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2.4 – 4.3 µm, ambient temperature, optically immersed PVI-2TE-4-1×1-TO8-wAl2O3-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 4.0 ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 4000 nm
Spectral Response: 2.4 – 4.3 µm
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InAs Photovoltaic Detector
VIGO Photonics
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InAs Photovoltaic Detector
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2.0 – 3.4 µm, two-stage thermoelectrically cooled PVA-2TE-3-0.1×0.1-TO8-wAl2O3-70 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAs alloy. It does not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted ...

Specifications
Diode Type: Other
Wavelength Of Operation: 3000 nm
Spectral Response: 2.0 – 5.5 µm
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HgCdTe (MCT) Multi Channel Detectors
VIGO Photonics
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HgCdTe (MCT) Multi Channel Detectors
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2.0 – 12.0 µm HgCdTe ambient temperature photovoltaic multiple junction quadrant detectorPVMQ is uncooled IR photovoltaic multiple junction quadrant detector based on sophisticated HgCdTe heterostructures for the best performance and stability. Quadrant detector consists of four separate active elements arranged in a quadrant ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 10,600 nm
Spectral Range: 2.0 – 12.0 µm
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HgCdTe (MCT) Photoconductive Detector
VIGO Photonics
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HgCdTe (MCT) Photoconductive Detector
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1.0 – 14.0 µm, three-stage thermoelectrically cooled, optically immersed PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12 µm. ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 12000 nm
Spectral Range: 1 to 14 µm
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AP-35 PbS Detector For 1-3.1µm
AP Technologies Ltd
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AP-35 PbS Detector For 1-3.1µm
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The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...

Specifications
Diode Type: PbS
Wavelength Of Operation: 1000 nm
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AP-25G PbS Detector For 1-3.1µm
AP Technologies Ltd
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AP-25G PbS Detector For 1-3.1µm
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The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...

Specifications
Diode Type: PbS
Wavelength Of Operation: 1000 nm
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AP-15G PbS Detector For 1-3.1µm
AP Technologies Ltd
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AP-15G PbS Detector For 1-3.1µm
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The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...

Specifications
Diode Type: PbS
Wavelength Of Operation: 1000 nm
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InGaAs PIN Photodiode PIN0500-17-D-TO
ANDANTA GmbH
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InGaAs PIN Photodiode PIN0500-17-D-TO
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InGaAs PIN Photodiodes.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 900 nm
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25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
Connector Optics LLC
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25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
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Our compact, top illuminated, low capacitance, high speed GaAs-based p-i-n photodiode (PD) chips and PD array chips are available as engineering samples and well suited for applications in 850 nm range optical data communicationssystems, optical interconnects, and general research and development. The PDs are available with a range ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850 nm
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InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C
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InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C
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InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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InGaAs PIN Photodiode PIN0500-17-D-T0
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN0500-17-D-T0
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InGaAs PIN Photodiode PIN0500-17-D-T0.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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LM-Pbs DETECTOR
Eddy Co
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LM-Pbs DETECTOR
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LM-Pbs DETECTOR.

Specifications
Diode Type: PbSe
Wavelength Of Operation: - nm
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Low Noise 400 kHz Photoreceiver With Si PIN Photodiode LCA-S-400K-SI
FEMTO Messtechnik GmbH
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Low Noise 400 kHz Photoreceiver With Si PIN Photodiode LCA-S-400K-SI
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By combining state of the art photodiodes with the proven and outstanding FEMTO LCA Current Amplifier technology we designed a new family of photoreceivers with a remarkable performance. The LCA-S-400K is available with either a large area Si or InGaAs photodiode covering a spectral range from 400 to 1100 nm and 900 to 1700 nm, ...

Specifications
Diode Type: Si
Wavelength Of Operation: 320-1060 nm
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Ultra-Low Noise 2 kHz Photoreceiver With Si-PIN Photodiode PWPR-2K-SI
FEMTO Messtechnik GmbH
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Ultra-Low Noise 2 kHz Photoreceiver With Si-PIN Photodiode PWPR-2K-SI
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In addition to precise and fast cw-measurements the relatively large bandwidth from DC to 2 kHz also allows time-resolved and modulated measurements. Particularly the combination with lock-in amplifiers results in ultra-sensitive measurement systems being almost immune to disturbances from external sources. In this way the PWPR-2K ...

Specifications
Diode Type: Si
Wavelength Of Operation: 320-1060 nm
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Femtowatt Photoreceiver With Si Photodiode FWPR-20-SI
FEMTO Messtechnik GmbH
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Femtowatt Photoreceiver With Si Photodiode FWPR-20-SI
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The series FWPR-20 photoreceivers combine low noise Si or InGaAs PIN photodiodes with a specially designed transimpedance amplifier with extremely high gain of up to 1012 V/A and very low noise. This unique combination results in a photoreceiver with Femtowatt sensitivity due to its exceptional low NEP of 0.7 fW/√Hz. Direct detection ...

Specifications
Diode Type: Si
Wavelength Of Operation: 320-1060 nm
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INPHORA Detectors
INPHORA Inc
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INPHORA Detectors
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Inphora\'s light measuring detectors are built using selected, stability tested, high-grade silicon PIN photocells. The photocells are matched high quality custom color glass filters to ensure long-life and consistent performance. 

Specifications
Diode Type: Other
Wavelength Of Operation: 400-900 nm
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PbSe 2 Watt Cooled Photoconductive IR Detector B1-( )C3T
Infrared Materials Inc
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PbSe 2 Watt Cooled Photoconductive IR Detector B1-( )C3T
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TE Cooled Infrared Detectors with Fast Response and High Sensitivity in the 1 – 5.5 um Wavelength Band.

Specifications
Diode Type: PbSe
Wavelength Of Operation: 4300 nm
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PbSe 4 Channel Infrared Detector
Infrared Materials Inc
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PbSe 4 Channel Infrared Detector
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Multi-element assembly available with two to four discreet optical channels in a single package.  

Specifications
Diode Type: PbSe
Wavelength Of Operation: -- nm
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PbSe Non-Cooled Photoconductive IR Detector B1-
Infrared Materials Inc
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PbSe Non-Cooled Photoconductive IR Detector B1-
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Room Temperature Infrared Detectors with Fast Response & High Sensitivity in the 1 – 5.5 um Wavelength Band.

Specifications
Diode Type: PbSe
Wavelength Of Operation: 3800 nm
Data Sheet
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