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Page 2 - PIN Detectors

HgCdTe (MCT) Photovoltaic Detector
VIGO Photonics
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HgCdTe (MCT) Photovoltaic Detector
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2.4 – 4.3 µm, ambient temperature, optically immersed PVI-2TE-4-1×1-TO8-wAl2O3-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 4.0 ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 4000 nm
Spectral Response: 2.4 – 4.3 µm
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InAs Photovoltaic Detector
VIGO Photonics
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InAs Photovoltaic Detector
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2.0 – 3.4 µm, two-stage thermoelectrically cooled PVA-2TE-3-0.1×0.1-TO8-wAl2O3-70 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAs alloy. It does not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted ...

Specifications
Diode Type: Other
Wavelength Of Operation: 3000 nm
Spectral Response: 2.0 – 5.5 µm
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HgCdTe (MCT) Multi Channel Detectors
VIGO Photonics
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HgCdTe (MCT) Multi Channel Detectors
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2.0 – 12.0 µm HgCdTe ambient temperature photovoltaic multiple junction quadrant detectorPVMQ is uncooled IR photovoltaic multiple junction quadrant detector based on sophisticated HgCdTe heterostructures for the best performance and stability. Quadrant detector consists of four separate active elements arranged in a quadrant ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 10,600 nm
Spectral Range: 2.0 – 12.0 µm
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HgCdTe (MCT) Photoconductive Detector
VIGO Photonics
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HgCdTe (MCT) Photoconductive Detector
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1.0 – 14.0 µm, three-stage thermoelectrically cooled, optically immersed PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12 µm. ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 12000 nm
Spectral Range: 1 to 14 µm
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InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C
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InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C
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InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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InGaAs PIN Photodiode PIN0500-17-D-T0
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN0500-17-D-T0
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InGaAs PIN Photodiode PIN0500-17-D-T0.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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PbS Detectors PB-Series
Laser Components USA, Inc.
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PbS Detectors PB-Series
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Polycrystalline lead sulfide detectors (PbS) detect infrared radiation in the wavelength range between 1 µm and 3.3 µm and provide the best price-performance ratio in large active areas for the SWIR region. Although they are famous for their operation at room temperature in comparison to other detector technology, ...

Specifications
Diode Type: PbS
Wavelength Of Operation: 3300 nm
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PbSe Detectors PB-Series
Laser Components USA, Inc.
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PbSe Detectors PB-Series
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Polycrystalline PbSe is still one of the best MWIR detectors on the market for high performance without cooling. The detectors can be used uncooled at a wavelength up to 4.7 μm. At low temperatures, they achieve even higher performance levels and the wavelength shifts to 5.2 μm.

Specifications
Diode Type: PbSe
Wavelength Of Operation: up to 5200 nm
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Extended InGaAs Photodiodes IG22-26 Series
Laser Components USA, Inc.
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Extended InGaAs Photodiodes IG22-26 Series
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The IG22-26 are a series of panchromatic PIN photodiodes with a wavelength range covering 500 - 2600 nm, depending on the option. The series have been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: up to 2600 nm
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InGaAs Photodiodes IG17-Series
Laser Components USA, Inc.
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InGaAs Photodiodes IG17-Series
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The IG17-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 1.7um. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: up to 1700 nm
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PINFET LDPA 0003R
OSI Laser Diode Inc.
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PINFET LDPA 0003R
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The OSI Laser Diode Inc. LDPA 0003R PINFET provides an excellent solution for optical receiver systemsthat require both high sensitivity and wide dynamic range. Applications include telecommunications lineterminatingequipment or repeaters and optical sensor systems where a user adjustable gain may bedesirable for optimizing system ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1550 nm
Bandwidth (3dB): 3 MHz
Optical Input Overload: -6 dBm
Responsivity (1550nm): 0.9 A/W
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PINFET Optical Receiver Modules
OSI Laser Diode Inc.
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PINFET Optical Receiver Modules
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The OSI Laser Diode Inc. PINFET provides an excellent solution for optical receiver systems that require both high sensitivity andwide dynamic range. Applications include telecommunications line-terminating equipment or repeaters and optical sensor systems.The receiver package offers high reliability satisfying Telcordia specifications.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850, 1310, 1550 nm
Operating Temperature: -40-70C
Minimum Bandwidth: 5-250MHz
Suggested Data Rate: 6-350Mb/s
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InGaAs PIN Photodiode Modules for Telecom Applications
OSI Laser Diode Inc.
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InGaAs PIN Photodiode Modules for Telecom Applications
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The OSI Laser Diode Inc. InGaAs PIN detector provides both small size and high performance in a miniature coaxial module. Designed to provide high responsivity and low leakage, LDI\\\'s detector modules exhibit low back reflection along with low polarization dependent loss (PDL). The detector module offers high reliability satisfying ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1310,1550 nm
Bandwidth: 2.5 GHz
Detector Diameter: 75 um
Responsivity: 0.8-0.9A/W
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PINAMP Mini-DIL Optical Receivers
OSI Laser Diode Inc.
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PINAMP Mini-DIL Optical Receivers
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• High Sensitivity/Wide Dynamic Range• High Responsivity and Low Dark Current• InGaAs Pin Detector• 4Mb/s, 52Mb/s, 155Mb/s & 622Mb/s• Single Supply Capable• Hermetic Package

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1310/1550 nm
Dark Current: 0.5 nA
Operating Temperature: -40-80C
Detector Bias: -10 V
Data Sheet
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