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Page 3 - PIN Detectors

LN2 Cooled HgCdTe Detectors MCT-5-N-0.05
InfraRed Associates
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LN2 Cooled HgCdTe Detectors MCT-5-N-0.05
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Infrared Associates, Inc. offers high quality Liquid Nitrogen cooled HgCdTe detectors. Each detector is optimized for specified wavebands of; 2µm to 5µm, 2µm to 13µm or our FTIR Series with wavebands up to 2µm to 24µm, as shown in the table below. The FTIR series of HgCdTe detectors are ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 4500 nm
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LN2 Cooled HgCdTe Detectors MCT-5-N-0.10
InfraRed Associates
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LN2 Cooled HgCdTe Detectors MCT-5-N-0.10
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Infrared Associates, Inc. offers high quality Liquid Nitrogen cooled HgCdTe detectors. Each detector is optimized for specified wavebands of; 2µm to 5µm, 2µm to 13µm or our FTIR Series with wavebands up to 2µm to 24µm, as shown in the table below. The FTIR series of HgCdTe detectors are ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 4500 nm
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TFMD5000B Silicon PIN Photodiode
Three Five Materials
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TFMD5000B Silicon PIN Photodiode
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TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications
Diode Type: Si
Wavelength Of Operation: 950 nm
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TFMD5000R Silicon PIN Photodiode
Three Five Materials
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TFMD5000R Silicon PIN Photodiode
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TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications
Diode Type: Si
Wavelength Of Operation: 950 nm
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TFMD5000 Silicon PIN Photodiode
Three Five Materials
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TFMD5000 Silicon PIN Photodiode
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TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications
Diode Type: Si
Wavelength Of Operation: 1050 nm
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Low Polarization Dependent Loss (PDL) InGaAs Photodiodes
GPD Optoelectronics Corp
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Low Polarization Dependent Loss (PDL) InGaAs Photodiodes
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Low Polarization Dependent Loss (PDL) InGaAs Photodiodes

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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4, 8, 12, or 16 Element Monolithic Linear Array
GPD Optoelectronics Corp
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4, 8, 12, or 16 Element Monolithic Linear Array
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Linear Arrays

Specifications
Diode Type: Other
Wavelength Of Operation: 1650 nm
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Large Area InGaAs Photodiodes
GPD Optoelectronics Corp
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Large Area InGaAs Photodiodes
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Large Area InGaAs Photodiodes

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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High Speed InGaAs Photodiodes
GPD Optoelectronics Corp
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High Speed InGaAs Photodiodes
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High Speed InGaAs Photodiodes

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
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Ge Photodiodes
GPD Optoelectronics Corp
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Ge Photodiodes
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Ge Photodiodes

Specifications
Diode Type: Ge
Wavelength Of Operation: 1300 nm
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FP1-850K Photodetectors
Inject Enterprise
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FP1-850K Photodetectors
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A photodiode of the type FP1-850K with a spectral sensitivity range of 810-870 nm with the introduction of radiation into the body through a multimode fiber with a core diameter 50 μm. It is made on the basis of a silicon pin photodiode   for use in fiber-optic communication systems, gyroscopes, measuring equipment and other ...

Specifications
Diode Type: Si
Wavelength Of Operation: 810 nm
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Large Area InGaAs PIN Photodiodes FD3000W
Fermionics
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Large Area InGaAs PIN Photodiodes FD3000W
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 3 mm in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
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Large Area InGaAs PIN Photodiodes FD2000W
Fermionics
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Large Area InGaAs PIN Photodiodes FD2000W
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. High shunt resistance allows high sensitivity to low level optical signals. The photosensitive area is 2 mm in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
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Large Area InGaAs PIN Photodiodes FD1500W
Fermionics
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Large Area InGaAs PIN Photodiodes FD1500W
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1.5 mm in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850 nm
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Large Area InGaAs PIN Photodiodes FD1000W
Fermionics
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Large Area InGaAs PIN Photodiodes FD1000W
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1 mm in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850 nm
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High Speed InGaAs PIN Photodiodes FD500 Series
Fermionics
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High Speed InGaAs PIN Photodiodes FD500 Series
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General purpose InGaAs PIN photodiodes useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 500 microns in diameter.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
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High Speed InGaAs PIN Photodiodes FD300 Series
Fermionics
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High Speed InGaAs PIN Photodiodes FD300 Series
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General purpose InGaAs PIN photodiodes useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 300 microns in diameter.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
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High Speed InGaAs PIN Photodiodes FD150 Series
Fermionics
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High Speed InGaAs PIN Photodiodes FD150 Series
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High-speed, low dark current, low capacitance photodiode for high speed communication systems, LANs, and FDDI applications. The 150 micron diameter photosensitive area improves coupling to multi-mode fiber using active device receptacles. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
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High Speed InGaAs PIN Photodiodes FD100 Series
Fermionics
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High Speed InGaAs PIN Photodiodes FD100 Series
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High-speed, low dark current, low capacitance photodiode for high speed communication systems, LANs, and FDDI applications. The photosensitive area is 100 microns in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
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High Speed InGaAs PIN Photodiodes FD50 Series
Fermionics
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High Speed InGaAs PIN Photodiodes FD50 Series
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Very high speed, low capacitance, low dark current photodiode for very high bit rate receiver applications. The photosensitive area is 50 microns in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Data Sheet
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