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Page 4 - PIN Detectors

High Speed InGaAs PIN Photodiodes FD100 Series
Fermionics
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High Speed InGaAs PIN Photodiodes FD100 Series
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High-speed, low dark current, low capacitance photodiode for high speed communication systems, LANs, and FDDI applications. The photosensitive area is 100 microns in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
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High Speed InGaAs PIN Photodiodes FD50 Series
Fermionics
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High Speed InGaAs PIN Photodiodes FD50 Series
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Very high speed, low capacitance, low dark current photodiode for very high bit rate receiver applications. The photosensitive area is 50 microns in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
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CLD240 Silicon Photodiodes
Clairex Technologies
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CLD240 Silicon Photodiodes
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The CLD240 series are new, direct replacements for the older CLD140 series and feature larger (0.060” x 0.060”) active area silicon PIN photodiode chips. Also featured are faster switching and lower junction capacitance. Three different lensing options are offered which satisfy the majority of application requirements. ...

Specifications
Diode Type: Si
Wavelength Of Operation: 850 nm
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CFD470 Fiber Optic PIN Photodiode
Clairex Technologies
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CFD470 Fiber Optic PIN Photodiode
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The CFD470 contains a PIN silicon photodiode mounted on a TO-18 header. The devices are designed to self-align in the 0.228” (5.79mm) bore of a standard fiber-optic receptacle. Three crush ribs on the outside of the case provide press-fit installation and precise alignment. The CFD470 is designed to interface with multimode optical ...

Specifications
Diode Type: Si
Wavelength Of Operation: 880 nm
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CLD340 Silicon Photodiodes
Clairex Technologies
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CLD340 Silicon Photodiodes
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The CLD340 is a high temperature AlGaAs photodiode designed for sensitivity from 830 to 910nm. This specialty detector eliminates the need for signal modulation or filtering of ambient light when used where background illumination could cause problems. The 0.040\" by 0.040\" chip is mounted in a flat window TO-46 package. The CLE335 ...

Specifications
Diode Type: GaInAsSb
Wavelength Of Operation: 880 nm
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CLD171 Silicon Photodiodes
Clairex Technologies
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CLD171 Silicon Photodiodes
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The CLD171 and CLD171R, are 0.122\" x 0.122\" active area silicon photodiodes featuring high linearity and low dark current. They are epoxy encapsulated for lower cost applications. Wide acceptance angle permits use in IR air communications, ambient light detection, safety and monitoring, security systems, etc.  

Specifications
Diode Type: Si
Wavelength Of Operation: 860 nm
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CLD160 Silicon Photodiodes
Clairex Technologies
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CLD160 Silicon Photodiodes
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The CLD160 is a 0.122\" x 0.122\" active area silicon photodiode mounted in a flat window TO-5 package. Wide acceptance angle permits use in IR air communications ambient light detection, safety and monitoring, security systems, etc. For additional information, call Clairex.

Specifications
Diode Type: Si
Wavelength Of Operation: 860 nm
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CLD156 Silicon Photodiodes
Clairex Technologies
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CLD156 Silicon Photodiodes
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The CLD156 and CLD156R are 0.122\" x 0.222\" active area silicon photodiodes featuring high linearity and low dark current. The TO-5 header provides thermal environment for reliable operation over a wide temperature range. Wide acceptance angle permits use in IR air communications, ambient light detection, safety and monitoring, ...

Specifications
Diode Type: Si
Wavelength Of Operation: 860 nm
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PbS Detectors PB-Series
Laser Components USA, Inc.
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PbS Detectors PB-Series
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Polycrystalline lead sulfide detectors (PbS) detect infrared radiation in the wavelength range between 1 µm and 3.3 µm and provide the best price-performance ratio in large active areas for the SWIR region. Although they are famous for their operation at room temperature in comparison to other detector technology, ...

Specifications
Diode Type: PbS
Wavelength Of Operation: 3300 nm
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PbSe Detectors PB-Series
Laser Components USA, Inc.
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PbSe Detectors PB-Series
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Polycrystalline PbSe is still one of the best MWIR detectors on the market for high performance without cooling. The detectors can be used uncooled at a wavelength up to 4.7 μm. At low temperatures, they achieve even higher performance levels and the wavelength shifts to 5.2 μm.

Specifications
Diode Type: PbSe
Wavelength Of Operation: up to 5200 nm
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Extended InGaAs Photodiodes IG22-26 Series
Laser Components USA, Inc.
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Extended InGaAs Photodiodes IG22-26 Series
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The IG22-26 are a series of panchromatic PIN photodiodes with a wavelength range covering 500 - 2600 nm, depending on the option. The series have been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: up to 2600 nm
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InGaAs Photodiodes IG17-Series
Laser Components USA, Inc.
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InGaAs Photodiodes IG17-Series
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The IG17-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 1.7um. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: up to 1700 nm
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PINFET LDPA 0003R
OSI Laser Diode Inc.
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PINFET LDPA 0003R
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The OSI Laser Diode Inc. LDPA 0003R PINFET provides an excellent solution for optical receiver systemsthat require both high sensitivity and wide dynamic range. Applications include telecommunications lineterminatingequipment or repeaters and optical sensor systems where a user adjustable gain may bedesirable for optimizing system ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1550 nm
Bandwidth (3dB): 3 MHz
Optical Input Overload: -6 dBm
Responsivity (1550nm): 0.9 A/W
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PINFET Optical Receiver Modules
OSI Laser Diode Inc.
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PINFET Optical Receiver Modules
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The OSI Laser Diode Inc. PINFET provides an excellent solution for optical receiver systems that require both high sensitivity andwide dynamic range. Applications include telecommunications line-terminating equipment or repeaters and optical sensor systems.The receiver package offers high reliability satisfying Telcordia specifications.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850, 1310, 1550 nm
Operating Temperature: -40-70C
Minimum Bandwidth: 5-250MHz
Suggested Data Rate: 6-350Mb/s
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InGaAs PIN Photodiode Modules for Telecom Applications
OSI Laser Diode Inc.
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InGaAs PIN Photodiode Modules for Telecom Applications
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The OSI Laser Diode Inc. InGaAs PIN detector provides both small size and high performance in a miniature coaxial module. Designed to provide high responsivity and low leakage, LDI\\\'s detector modules exhibit low back reflection along with low polarization dependent loss (PDL). The detector module offers high reliability satisfying ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1310,1550 nm
Bandwidth: 2.5 GHz
Detector Diameter: 75 um
Responsivity: 0.8-0.9A/W
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PINAMP Mini-DIL Optical Receivers
OSI Laser Diode Inc.
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PINAMP Mini-DIL Optical Receivers
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• High Sensitivity/Wide Dynamic Range• High Responsivity and Low Dark Current• InGaAs Pin Detector• 4Mb/s, 52Mb/s, 155Mb/s & 622Mb/s• Single Supply Capable• Hermetic Package

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1310/1550 nm
Dark Current: 0.5 nA
Operating Temperature: -40-80C
Detector Bias: -10 V
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