Page 5 - PIN Detectors

ODD-15W Visible Blue And Red Enhanced Detectors
Opto Diode
OPTO DIODE Visible Blue and Red Enhanced Detectors.  

Specifications

Diode Type: Si
Wavelength Of Operation: 300 - 1100 nm
Responsivity At 632m: 0.4 A/W
ODD-12WB Visible Blue And Red Enhanced Detectors
Opto Diode
OPTO DIODE Visible Blue and Red Enhanced Detectors.  

Specifications

Diode Type: Si
Wavelength Of Operation: 400 - 1100 nm
Responsivity At 450m: 0.28 A/W
ODD-12W Red Enhanced Photodiode In TO-8 Hermetic Pkg
Opto Diode
OPTO DIODE Photodiode 12mm2.  

Specifications

Diode Type: Si
Wavelength Of Operation: 300 - 1100 nm
Responsivity At 632m: 0.4 A/W
ODD-1 Red Enhanced Photodiode In TO-18 Pkg
Opto Diode
OPTO DIODE Photodiode 1mm^2 for OEM, industrial, and scientific aplications.    

Specifications

Diode Type: Si
Wavelength Of Operation: 300 - 1100 nm
Responsivity At 632m: 0.4 A/W
ODD-8SMD-D General Purpose SMD Photodiode With Daylight Filter
Opto Diode
OPTO DIODE Surface Mount Photodiode with Daylight Filter.  

Specifications

Diode Type: Si
Wavelength Of Operation: 600 - 1200 nm
Responsivity At 940m: 0.44 A/W
ODD-8SMD General Purpose SMD Photodiode
Opto Diode
OPTO DIODE Surface Mount Photodiode for OEM, industrial, and scientific applications.   

Specifications

Diode Type: Si
Wavelength Of Operation: 120 - 1150 nm
Responsivity At 940m: 0.44 A/W
Polycrystalline lead sulfide detectors (PbS) detect infrared radiation in the wavelength range between 1 µm and 3.3 µm and provide the best price-performance ratio in large active areas for the SWIR region. Although they are famous for their operation at room temperature in comparison to other detector technology, ...

Specifications

Diode Type: PbS
Wavelength Of Operation: 3300 nm
Polycrystalline PbSe is still one of the best MWIR detectors on the market for high performance without cooling. The detectors can be used uncooled at a wavelength up to 4.7 μm. At low temperatures, they achieve even higher performance levels and the wavelength shifts to 5.2 μm.

Specifications

Diode Type: PbSe
Wavelength Of Operation: up to 5200 nm
The IG22-26 are a series of panchromatic PIN photodiodes with a wavelength range covering 500 - 2600 nm, depending on the option. The series have been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: up to 2600 nm
The IG17-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 1.7um. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: up to 1700 nm
The OSI Laser Diode Inc. LDPA 0003R PINFET provides an excellent solution for optical receiver systemsthat require both high sensitivity and wide dynamic range. Applications include telecommunications lineterminatingequipment or repeaters and optical sensor systems where a user adjustable gain may bedesirable for optimizing system ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1550 nm
Bandwidth (3dB): 3 MHz
Optical Input Overload: -6 dBm
Responsivity (1550nm): 0.9 A/W
The OSI Laser Diode Inc. PINFET provides an excellent solution for optical receiver systems that require both high sensitivity andwide dynamic range. Applications include telecommunications line-terminating equipment or repeaters and optical sensor systems.The receiver package offers high reliability satisfying Telcordia specifications.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850, 1310, 1550 nm
Operating Temperature: -40-70C
Minimum Bandwidth: 5-250MHz
Suggested Data Rate: 6-350Mb/s
The OSI Laser Diode Inc. InGaAs PIN detector provides both small size and high performance in a miniature coaxial module. Designed to provide high responsivity and low leakage, LDI\\\'s detector modules exhibit low back reflection along with low polarization dependent loss (PDL). The detector module offers high reliability satisfying ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1310,1550 nm
Bandwidth: 2.5 GHz
Detector Diameter: 75 um
Responsivity: 0.8-0.9A/W
• High Sensitivity/Wide Dynamic Range• High Responsivity and Low Dark Current• InGaAs Pin Detector• 4Mb/s, 52Mb/s, 155Mb/s & 622Mb/s• Single Supply Capable• Hermetic Package

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1310/1550 nm
Dark Current: 0.5 nA
Operating Temperature: -40-80C
Detector Bias: -10 V