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Si PIN Detectors

PH100-SI-HA-OD2-D0 Photodiode Laser Power Detector
Gentec-EO
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PH100-SI-HA-OD2-D0 Photodiode Laser Power Detector
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The PH100-SI-HA-OD2-D0 is a high-quality photodiode detector designed for laser power measurement up to 750 mW. It offers accurate and reliable power measurement capabilities with a large aperture of 10 mm Ø for the silicon sensors. With three different versions available, including Silicon 350-1080 nm (up to 750 mW), ...

Specifications
Diode Type: Si
Wavelength Of Operation: 630-1080 nm
Maximum Average Power: 750 mW
Noise Equivalent Power: 2 nW
Typical Rise Time: 0.2 s
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Gentec-EO High Power Detector PH100-SI-HA-OD2-D0
Gentec-EO
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Gentec-EO High Power Detector PH100-SI-HA-OD2-D0
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The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications
Diode Type: Si
Wavelength Of Operation: 630 - 1080 nm
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Gentec-EO High Power Detector PH100-SI-HA-OD1-D0
Gentec-EO
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Gentec-EO High Power Detector PH100-SI-HA-OD1-D0
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The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths.   The PH20-Ge, PH5B-Ge, PE5B-Ge detectors ...

Specifications
Diode Type: Si
Wavelength Of Operation: 420 - 1080 nm
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Gentec-EO Photodiode Detector PH100-SIUV-OD1-D0
Gentec-EO
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Gentec-EO Photodiode Detector PH100-SIUV-OD1-D0
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The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications
Diode Type: Si
Wavelength Of Operation: 400 - 1080 nm
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Gentec-EO Photodiode Detector PH100-SIUV-OD.3-D0
Gentec-EO
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Gentec-EO Photodiode Detector PH100-SIUV-OD.3-D0
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The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications
Diode Type: Si
Wavelength Of Operation: 400 - 1080 nm
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150MHz Low Noise Adjustable Gain SI PIN Balance Detector ZKPD-150M-CG-DC
CSRayzer Optical Technology
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150MHz Low Noise Adjustable Gain SI PIN Balance Detector ZKPD-150M-CG-DC
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ZKPD-150M-CG-DC is a low noise high bandwidth SI PIN balance detector consisting of two balanced photodiodes with ultra-low noise. Sound high-speed adjustable gain amplification circuit and low-noise power supply. The two photodiodes are matched to achieve an excellent common-mode rejection ratio (CMRR) for better noise reduction. It ...

Specifications
Diode Type: Si
Wavelength Of Operation: 320~1080 nm
Max Frequency Response: Other / Not specified
Package Type: Surface Mount
Built-In Amplifier: Yes
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Low Noise 400 kHz Photoreceiver With Si PIN Photodiode LCA-S-400K-SI
FEMTO Messtechnik GmbH
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Low Noise 400 kHz Photoreceiver With Si PIN Photodiode LCA-S-400K-SI
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By combining state of the art photodiodes with the proven and outstanding FEMTO LCA Current Amplifier technology we designed a new family of photoreceivers with a remarkable performance. The LCA-S-400K is available with either a large area Si or InGaAs photodiode covering a spectral range from 400 to 1100 nm and 900 to 1700 nm, ...

Specifications
Diode Type: Si
Wavelength Of Operation: 320-1060 nm
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Ultra-Low Noise 2 kHz Photoreceiver With Si-PIN Photodiode PWPR-2K-SI
FEMTO Messtechnik GmbH
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Ultra-Low Noise 2 kHz Photoreceiver With Si-PIN Photodiode PWPR-2K-SI
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In addition to precise and fast cw-measurements the relatively large bandwidth from DC to 2 kHz also allows time-resolved and modulated measurements. Particularly the combination with lock-in amplifiers results in ultra-sensitive measurement systems being almost immune to disturbances from external sources. In this way the PWPR-2K ...

Specifications
Diode Type: Si
Wavelength Of Operation: 320-1060 nm
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Femtowatt Photoreceiver With Si Photodiode FWPR-20-SI
FEMTO Messtechnik GmbH
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Femtowatt Photoreceiver With Si Photodiode FWPR-20-SI
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The series FWPR-20 photoreceivers combine low noise Si or InGaAs PIN photodiodes with a specially designed transimpedance amplifier with extremely high gain of up to 1012 V/A and very low noise. This unique combination results in a photoreceiver with Femtowatt sensitivity due to its exceptional low NEP of 0.7 fW/√Hz. Direct detection ...

Specifications
Diode Type: Si
Wavelength Of Operation: 320-1060 nm
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TFMD5000B Silicon PIN Photodiode
Three Five Materials
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TFMD5000B Silicon PIN Photodiode
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TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications
Diode Type: Si
Wavelength Of Operation: 950 nm
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TFMD5000R Silicon PIN Photodiode
Three Five Materials
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TFMD5000R Silicon PIN Photodiode
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TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications
Diode Type: Si
Wavelength Of Operation: 950 nm
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TFMD5000 Silicon PIN Photodiode
Three Five Materials
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TFMD5000 Silicon PIN Photodiode
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TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications
Diode Type: Si
Wavelength Of Operation: 1050 nm
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FP1-850K Photodetectors
Inject Enterprise
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FP1-850K Photodetectors
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A photodiode of the type FP1-850K with a spectral sensitivity range of 810-870 nm with the introduction of radiation into the body through a multimode fiber with a core diameter 50 μm. It is made on the basis of a silicon pin photodiode   for use in fiber-optic communication systems, gyroscopes, measuring equipment and other ...

Specifications
Diode Type: Si
Wavelength Of Operation: 810 nm
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CLD240 Silicon Photodiodes
Clairex Technologies
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CLD240 Silicon Photodiodes
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The CLD240 series are new, direct replacements for the older CLD140 series and feature larger (0.060” x 0.060”) active area silicon PIN photodiode chips. Also featured are faster switching and lower junction capacitance. Three different lensing options are offered which satisfy the majority of application requirements. ...

Specifications
Diode Type: Si
Wavelength Of Operation: 850 nm
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CFD470 Fiber Optic PIN Photodiode
Clairex Technologies
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CFD470 Fiber Optic PIN Photodiode
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The CFD470 contains a PIN silicon photodiode mounted on a TO-18 header. The devices are designed to self-align in the 0.228” (5.79mm) bore of a standard fiber-optic receptacle. Three crush ribs on the outside of the case provide press-fit installation and precise alignment. The CFD470 is designed to interface with multimode optical ...

Specifications
Diode Type: Si
Wavelength Of Operation: 880 nm
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CLD171 Silicon Photodiodes
Clairex Technologies
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CLD171 Silicon Photodiodes
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The CLD171 and CLD171R, are 0.122\" x 0.122\" active area silicon photodiodes featuring high linearity and low dark current. They are epoxy encapsulated for lower cost applications. Wide acceptance angle permits use in IR air communications, ambient light detection, safety and monitoring, security systems, etc.  

Specifications
Diode Type: Si
Wavelength Of Operation: 860 nm
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CLD160 Silicon Photodiodes
Clairex Technologies
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CLD160 Silicon Photodiodes
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The CLD160 is a 0.122\" x 0.122\" active area silicon photodiode mounted in a flat window TO-5 package. Wide acceptance angle permits use in IR air communications ambient light detection, safety and monitoring, security systems, etc. For additional information, call Clairex.

Specifications
Diode Type: Si
Wavelength Of Operation: 860 nm
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CLD156 Silicon Photodiodes
Clairex Technologies
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CLD156 Silicon Photodiodes
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The CLD156 and CLD156R are 0.122\" x 0.222\" active area silicon photodiodes featuring high linearity and low dark current. The TO-5 header provides thermal environment for reliable operation over a wide temperature range. Wide acceptance angle permits use in IR air communications, ambient light detection, safety and monitoring, ...

Specifications
Diode Type: Si
Wavelength Of Operation: 860 nm
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SXUV300CDS EUV Enhanced Detectors
Opto Diode
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SXUV300CDS EUV Enhanced Detectors
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OPTO DIODE EUV Enhanced Detectors.

Specifications
Diode Type: Si
Wavelength Of Operation: 1 - 1000 nm
Responsivity At 13.5nm: 0.22 A/W
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On FindLight marketplace you will find 39 different Si PIN Detectors from suppliers around the world. With just a few clicks you can compare different Si PIN Detectors and get accurate price quotes based on your needs and quantity required. Note that some wholesale suppliers may offer discounts for large quantities. From any product page you can directly contact any vendor within seconds.