SXUV100DS EUV Enhanced Detectors
Description
OPTO DIODE EUV Enhanced Detectors.
SXUV100DS EUV Enhanced Detectors
Specifications |
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|---|---|
| Diode Type: | Si |
| Wavelength Of Operation: | 1 - 1000 nm |
| Responsivity At 13.5nm: | 0.22 A/W |
Features
Single Active Area
Detection to 1 nm
Stable Response after Exposure to EUV/UV Conditions
Protective Cover Plate2
Applications
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
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Frequently Asked Questions
The electro-optical characteristics of the SXUV100DS EUV Enhanced Detector include an active area of 100 mm2, responsivity of 0.35 A/W, shunt resistance of 10 MOhms, reverse breakdown voltage of 10 Volts, capacitance of 6-15 nF, and response time of 6 µ sec.
The features of the SXUV100DS EUV Enhanced Detector include single active area detection to 1 nm, stable response after exposure to EUV/UV conditions, and a protective cover plate.
The SXUV100DS EUV Enhanced Detector is shipped with a temporary cover to protect the photodiode and wire bonds. Review the Application Note, “Handling Precautions for AXUV, SXUV, and UVG Detectors”, prior to removing cover.
The storage and operating temperature range of the SXUV100DS EUV Enhanced Detector is -10 ° to 40 °C in ambient conditions and -20 °C to 80 °C in nitrogen or vacuum conditions.
The SXUV100DS EUV Enhanced Detector is used for EUV energy measurements and metrology.