SXUV20CDS EUV Enhanced Detectors
Description
OPTO DIODE EUV Enhanced Detectors.
SXUV20CDS EUV Enhanced Detectors
Specifications |
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Diode Type: | Si |
Wavelength Of Operation: | 1 - 1000 nm |
Responsivity At 13.5nm: | 0.22 A/W |
Features
Circular Active Area
Ideal for EUV Detection
Higher Overall Responsivity
Lower Noise
Superior Radiation Hardness
High Photon Flux Robustness
TO-8 package
Applications
For pricing, technical or any other questions please contact the supplier
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Ships from:
United States
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Sold by:
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On FindLight:
External Vendor
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Frequently Asked Questions
The active area of the SXUV20CDS EUV Enhanced Detector is 20 mm2 and it has a circular shape.
This detector is ideal for EUV energy measurements and metrology.
The maximum junction temperature of the detector is 100°C.
The rise time of the detector is 2 usec.
The storage temperature range of the detector is -20°C to 100°C.
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