TFMD5000B Silicon PIN Photodiode
Description
TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for responsivity from visible to 1000nm; a red encapsulant lens for applications that are required to filter out visible ambient light interference; and a black encapsulant lens for applications where higher responsivity in the infrared region is required
TFMD5000B Silicon PIN Photodiode
Specifications |
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|---|---|
| Diode Type: | Si |
| Wavelength Of Operation: | 950 nm |
Features
Large radiant sensitive area (8.1mm2)
Wide angle of half sensitivity φ= ±65°
High photo sensitivity
Fast response times
Small junction capacitance
Applications
Sensor
Encoders
Medical
Fiber Optics
Automotive
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United States
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Frequently Asked Questions
The absolute maximum ratings for the TFMD5000B include a reverse voltage of 60V, power dissipation of 215mW, junction temperature of 100°C, storage temperature range of -55°C to +100°C, and a soldering temperature of 260°C for up to 3 seconds.
The TFMD5000B can be used in sensors, encoders, medical equipment, fiber optics, and automotive applications.
The TFMD5000B comes in 3 different versions: standard clear encapsulation lens for responsivity from visible to 1000nm; a red encapsulant lens for applications that are required to filter out visible ambient light interference; and a black encapsulant lens for applications where higher responsivity in the infrared region is required.
The TFMD5000B has a large radiant sensitive area (8.1mm2), wide angle of half sensitivity φ= ±65°, high photo sensitivity, fast response times, and small junction capacitance.
The TFMD5000B is a new device that is a super low profile and has an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square.