All Categories

1-25 of 454 results for "Semiconductors". Did you mean "semiconductor"?

Filter ()
Categories
Organizations
Supplier Country
Average Power
Load Capacity (Vertical)
Reflectivity
Base Vacuum
Wavelength
Polarization Extinction Ratio
# Pixels (Height)
Processing Speed
Energy Stability (RMS)
Length
Max Substrate Temperature
Minimum Scan Time
Detection Spectral Range
Load Capacity (Horizontal)
Edge Thickness, Te
Height
Focus Repeatability (full range)
Maximum Power
Magnification
Max Output Power
Max Speed
3dB Optical Bandwidth
Substrate Size
Pulse Duration
Beam Quality (M^2)
Center Wavelength
Effective Focal Length
Max Repetition Rate
Output Power
Fiber Cladding Diameter
Focal Length
# Pixels (Width)
Linear Dispersion (Avg)
Noise Equivalent Power
Pixel Size (Square)
Laser Output Power
Min Input Power
Lowest Level Detection (LLD) Range
Full Frame Rate
Wavelength Range (reflectance)
Spectral Resolution (Avg)
Pulse Energy
Nominal Gain
Center Wavelength (typical)
Pointing Stability (RMS)
Travel Range
Output Power (avg)
Wavelength Accuracy
Size
Avg. Power
Operating Wavelength
Spectral Range
Max Average Power Density
Diffraction Grating
Wavelength Range
Bit Depth
Power Consumption
Focus Accuracy (full range)
Spectral Bandwidth
Central Wavelength
Thickness
Center Wavelength Range
Operating Power (typical)
Repetition Rate
Saturation Output Power
Diameter
Peak Quantum Efficiency
Weight
Fiber Core Diamater
Grating Blaze Wavelength
Spectral Resolution
Peak Power
Fiber Length
Work Area (X)
Work Area (Y)
Pulse-to-Pulse Stability (RMS)
Output Fiber Length
Width
Spectral Linewidth
Bandwidth (FWHM)
Resolution

Search Results

AIX 2800G4-TM IC2 DEPOSITION SYSTEM FOR COMPOUND SEMICONDUCTORS

AIX 2800G4-TM IC2 DEPOSITION SYSTEM FOR COMPOUND SEMICONDUCTORS

  1. Material Production
  2. Coating
  3. In Thin Film Deposition
Inquire Price

Specifications
Substrate Size: 203.2-152.4 mm
Base Vacuum: -- Torr
Max Substrate Temperature: -- degC
Process Type: Pulsed Laser Deposition (PLD)
Silicon Wafers

Silicon Wafers

  1. Optics
  2. Optical Materials
  3. In Raw Wafers
Inquire Price

Specifications
Wafer Material: Silicon (Si)
Diameter: 101.6-304.8 mm
Thickness: -- um
microPREP PRO Laser-Based Sample Preparation for Microstructure Diagnostics

microPREP PRO Laser-Based Sample Preparation for Microstructure Diagnostics

  1. Laser Material Processing
  2. Micromachining Lasers
  3. In Laser Micromachining Systems
Inquire Price

Specifications
Materials: Metals, Thermoset Plastics, Thermoplastics, Polimers, Textile, Wood, Paper, Stones, Ceramics
Laser Type: CO2
Laser Wavelength: 1070 nm (IR)
Laser Output Power: -- W
640 NX Laser - Single Frequency CW DPSS

640 NX Laser - Single Frequency CW DPSS

  1. Lasers
  2. Solid State Lasers
  3. In CW DPSS Lasers
Inquire Price

Specifications
Wavelength: 640 nm
Max Output Power: 1500 mW
Spectral Bandwidth: ≤ 0.5 MHz
Spatial Mode: TEM00
microFLEX Roll-to-Roll Laser Processing Platform

microFLEX Roll-to-Roll Laser Processing Platform

  1. Laser Material Processing
  2. Micromachining Lasers
  3. In Multipurpose Laser Workstations
Inquire Price

Specifications
Processes: Ablation, Cutting
Materials: Metals, Polimers
Laser Type: Fiber
Laser Safety: Not classified
2-Color Ratio Fiber Optic Infrared Temperature Measurement and Control System iR2

2-Color Ratio Fiber Optic Infrared Temperature Measurement and Control System iR2

  1. Light Analysis
  2. Detectors
  3. In Thermal Detectors
Inquire Price

Specifications
Detector Type: Thermal Absorber (thermopile)
Spectral Range: 0.8-1.7 um
Size: 62 mm
Maximum Power: 5 W
High Resolution Research Spectrometer 1250M

High Resolution Research Spectrometer 1250M

  1. Spectral Analysis
  2. Spectrometers
  3. In Spectrographs and Monochromators
Inquire Price
  • Sold by:
    HORIBA
  • Ships from:

    United States

Specifications
Monochromator Type: Not Specified
Effective Focal Length: 1250 mm
Diffraction Grating: 1200 lines/mm
Grating Blaze Wavelength: 313.183 nm
IQ1C190 Semiconductor Laser

IQ1C190 Semiconductor Laser

  1. Lasers
  2. Semiconductor Lasers
  3. In CW Semiconductor Lasers
Inquire Price

Specifications
Center Wavelength: 0.375 um
Output Power: 190 mW
Meterology Instrument Semiconductor

Meterology Instrument Semiconductor

  1. Engineering Solutions
  2. Design and Manufacturing
  3. In Opto-Mechanical Design
Inquire Price

Specifications
Atomic Force Microscopy

Atomic Force Microscopy

  1. Engineering Solutions
  2. Measurement and Repair
  3. In Measurement and Calibration
Inquire Price

Specifications
Autofocus AF910

Autofocus AF910

  1. Optics
  2. Lenses
  3. In Autofocus Lens
Inquire Price

Specifications
Objective Lens Options: 2X, 5X, 10X, 20X, 50X, 100X
Focus Repeatability (full Range): 0.4 um
Focus Accuracy (full Range): 0.6 um
Resolution: 2.00 um
High Power Industrial Femtosecond Laser IFRIT

High Power Industrial Femtosecond Laser IFRIT

  1. Lasers
  2. Ultrafast Lasers
  3. In Amplified Lasers
Inquire Price

Specifications
Center Wavelength: 780 nm
Repetition Rate: 1-1 kHz
Pulse Energy: 1 mJ
Energy Stability (RMS): 0.9 %
LG Standard CW Semiconductor Laser

LG Standard CW Semiconductor Laser

  1. Lasers
  2. Semiconductor Lasers
  3. In CW Semiconductor Lasers
Inquire Price

Specifications
Center Wavelength: 0.638 um
Output Power: 100 mW
LD635‐5‐1 Semiconductor Laser

LD635‐5‐1 Semiconductor Laser

  1. Lasers
  2. Semiconductor Lasers
  3. In CW Semiconductor Lasers
Inquire Price

Specifications
Center Wavelength: 635 um
Output Power: 5 mW
λ-Amp Semiconductor Optical Amplifier

λ-Amp Semiconductor Optical Amplifier

  1. Lasers
  2. Fiber Lasers
  3. In Fiber Amplifiers
Inquire Price

Specifications
Amplifier Type: SOA - Semiconductor Optical Amplifier
Wavelength Range: 950-1090 nm
Min Input Power: -30 dBm
Max Output Power: 27 dBm
LT Safe CW Semiconductor Laser

LT Safe CW Semiconductor Laser

  1. Lasers
  2. Semiconductor Lasers
  3. In CW Semiconductor Lasers
Inquire Price

Specifications
Center Wavelength: 0.520 um
Output Power: 30 mW
SESAM (Semiconductor Saturable Absorber Mirror)

SESAM (Semiconductor Saturable Absorber Mirror)

  1. Lasers
  2. Ultrafast Lasers
  3. In Accessories
Inquire Price

Specifications
Central Wavelength: 2800nm | 3500nm | 3500nm |3500nm
Absorptivity: 40% | 38% | 38% | 38%
Modulation Depth: 15% | 11.5% | 14% | 11.5%
Absorption Recovery Time: 680ps | 720ps | 7ps | 1.4ps
Sapphire Wafer for Semiconductor and Photonics Applications

Sapphire Wafer for Semiconductor and Photonics Applications

  1. Optics
  2. Laser Windows
  3. In Flat Windows
Inquire Price

Specifications
Substrate Material: Sapphire
Antireflection Coating: Uncoated
Diameter: 203.2 mm
Surface Quality: 60-40 scratch-dig
Synapse Linear Extended InGaAs Array SYN-512X1-25-2200

Synapse Linear Extended InGaAs Array SYN-512X1-25-2200

  1. Imaging and Vision
  2. Cameras
  3. In Imaging & Spectroscopy
Inquire Price
  • Sold by:
    HORIBA
  • Ships from:

    United States

Specifications
Sensor Type: InGaAs Array
# Pixels (Width): 25
# Pixels (Height): 250
Pixel Size (Square): 512 um
Synapse Linear InGaAs Array SYN-512X1-25-1700

Synapse Linear InGaAs Array SYN-512X1-25-1700

  1. Imaging and Vision
  2. Cameras
  3. In Imaging & Spectroscopy
Inquire Price
  • Sold by:
    HORIBA
  • Ships from:

    United States

Specifications
Sensor Type: InGaAs Array
# Pixels (Width): 25
# Pixels (Height): 500
Pixel Size (Square): 512 um
Bluephoton CWA.L.WS 375nm CW Semiconductor Laser

Bluephoton CWA.L.WS 375nm CW Semiconductor Laser

  1. Lasers
  2. Semiconductor Lasers
  3. In CW Semiconductor Lasers
Inquire Price

Specifications
Center Wavelength: 0.375 um
Output Power: 16 mW
Redphoton CWA.L.NB 1060nm CW Semiconductor Laser

Redphoton CWA.L.NB 1060nm CW Semiconductor Laser

  1. Lasers
  2. Semiconductor Lasers
  3. In CW Semiconductor Lasers
Inquire Price

Specifications
Center Wavelength: 0.106 um
Output Power: 150 mW
Redphoton CWA.L.NB 763nm CW Semiconductor Laser

Redphoton CWA.L.NB 763nm CW Semiconductor Laser

  1. Lasers
  2. Semiconductor Lasers
  3. In CW Semiconductor Lasers
Inquire Price

Specifications
Center Wavelength: 0.763 um
Output Power: 30 mW
LD405‐200‐1 CW Semiconductor Laser

LD405‐200‐1 CW Semiconductor Laser

  1. Lasers
  2. Semiconductor Lasers
  3. In CW Semiconductor Lasers
Inquire Price

Specifications
Center Wavelength: 405 um
Output Power: 200 mW
LD405‐100‐1 CW Semiconductor Laser

LD405‐100‐1 CW Semiconductor Laser

  1. Lasers
  2. Semiconductor Lasers
  3. In CW Semiconductor Lasers
Inquire Price

Specifications
Center Wavelength: 405 um
Output Power: 100 mW