>= 500um Terahertz Imaging

The detectors are fabricated with a GaAs high-mobility heterostructure in the standard semiconductor cycle using conventional optical lithography. The imaging sensor is manufactured on a single wafer. That process ensures high homogeneity and reproducibility of the plasmonic detector parameters (pixel-to-pixel deviation responsivity ...

Specifications

Scan Range: <= 100mm X 100mm
Resolution (X Direction): >= 500um um
Resolution (Y Direction): >= 500um
The detectors are fabricated with a GaAs high-mobility heterostructure in the standard semiconductor cycle using conventional optical lithography. The imaging sensor is manufactured on a single wafer. That process ensures high homogeneity and reproducibility of the plasmonic detector parameters (pixel-to-pixel deviation responsivity ...

Specifications

Scan Range: <= 100mm X 100mm
Resolution (X Direction): >= 500um um
Resolution (Y Direction): >= 500um
The detectors are fabricated with a GaAs high-mobility heterostructure in the standard semiconductor cycle using conventional optical lithography. The imaging sensor is manufactured on a single wafer. That process ensures high homogeneity and reproducibility of the plasmonic detector parameters (pixel-to-pixel deviation responsivity ...

Specifications

Scan Range: <= 100mm X 100mm
Resolution (X Direction): >= 500um um
Resolution (Y Direction): >= 500um
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