1064 Single-Frequency DBR Laser Diode
Description
The 1064 nm DBR Laser Diode is a high-performance, edge-emitting laser designed using Photodigm’s advanced Gallium Arsenide (GaAs) technology. It delivers a single-frequency, single-spatial-mode output, making it an excellent choice for applications requiring precise wavelength stability and low-noise performance. Featuring narrow linewidth (<500 kHz) and a high side mode suppression ratio (>40 dB), this laser diode ensures exceptional beam quality.
Designed for low-noise pump sources and frequency doubling applications, the 1064 nm DBR laser integrates passivated facets for enhanced reliability. It is available in multiple packaging options, including Chip on Submount (CoS), C-Mount, TO-8, and TOSA, allowing seamless integration into various optical systems. With power outputs ranging from 40 mW to 350 mW, this laser diode provides flexible operation across diverse research and industrial environments.
Whether used in quantum optics, atomic cooling, or precision metrology, the 1064 nm DBR laser ensures stable, high-quality optical output with temperature tuning capabilities of 0.06 nm/°C and current tuning of 0.002 nm/mA.
1064 Single-Frequency DBR Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 1.06 ± 0.6 um |
| Output Power: | 100-350 mW |
| Operating Current, Max (CW & Pulsed): | 550 mA |
| Optical Power At Max Operating Current: | 350 mW |
| Storage Temperature: | 0 to +70 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate:: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
| Laser Forward Voltage: | 5 V |
Features
- Single Spatial Mode Beam: Provides high-quality, stable output for precise applications
- Low Noise Performance: Ideal for frequency doubling and low-noise pump sources
- High Reliability: Passivated facets ensure long-term durability and minimal degradation
- Wide Power Range: Available in low-power (40–180 mW) and high-power (100–350 mW) configurations
- Low Threshold Current: Low power threshold current for energy-efficient operation
- Excellent Polarization Extinction Ratio: Maintains high polarization purity with a ratio of 20 dB
- Slope Efficiency: High slope efficiency of 0.75–0.8 W/A for improved performance
Applications
- Frequency Doubling Applications: Used as a reliable pump source for generating higher-frequency lasers
- Precision Optical Systems: Ideal for low-noise applications requiring high stability and power control
- Laser Spectroscopy: Supports precise wavelength and mode characteristics for accurate measurements
- Research and Development: Suitable for laboratory setups requiring single-frequency, high-power lasers
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Ships from:
United States
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On FindLight:
since 2019
Frequently Asked Questions
The 1064 nm DBR Laser Diode is primarily used as a low-noise pump source in frequency doubling applications. It is also ideal for precision optical systems, laser spectroscopy, and research and development that require high stability and narrow linewidth.
The 1064 nm DBR Laser Diode is available in two configurations: low power (40–180 mW) and high power (100–350 mW), providing flexibility for different application needs.
The 1064 nm DBR Laser Diode offers an excellent polarization extinction ratio of 20 dB, ensuring high-quality, stable polarization for demanding applications.
The threshold current for the low-power model is 30 mA, and for the high-power model, it is 50 mA. These low threshold currents contribute to the energy-efficient operation of the laser diode.
The laser diode operates effectively within a temperature range of 5°C to 70°C at the case level and 5°C to 45°C at the laser chip. It is important to ensure that it is operated within these temperatures to maintain optimal performance and avoid damage.