1083.33 Single-Frequency DBR Laser Diode
Description
The 1083.33 nm DBR Laser Diode is a high-performance, single-frequency laser based on advanced Gallium Arsenide (GaAs) monolithic technology. Designed for atomic spectroscopy applications, it provides a stable single-spatial-mode beam with passivated facets for enhanced reliability. This laser is particularly suited for metastable Helium (He*) spectroscopy and other high-precision optical applications, offering a guaranteed wavelength accuracy within ±10°C from room temperature.
Available in low-power (40–120 mW) and high-power (100–350 mW) configurations, the diode features a high side-mode suppression ratio (SMSR) of over 40 dB, ensuring minimal spectral noise. Its precise wavelength tuning capabilities, facilitated by temperature and current adjustments, make it an ideal solution for scientific research and industrial applications requiring stringent frequency stability.
For integration flexibility, the 1083.33 nm DBR Laser Diode is available in multiple package options, including Chip on Submount (CoS), TO-8, C-Mount, and Transmitter Optical Subassembly (TOSA). Additional optical enhancements, such as Mode-Hop Free (MHF) and Virtual Point Source (VPS) lenses, further optimize its performance.
1083.33 Single-Frequency DBR Laser Diode
Specifications |
|
|---|---|
| Center Wavelength: | 1.083 ± 0.6 um |
| Output Power: | 100-350 mW |
| Operating Current, Max (CW & Pulsed): | 550 mA |
| Optical Power At Max Operating Current: | 350 mW |
| Storage Temperature: | 0 to +70 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
| Laser Forward Voltage: | 2 V |
Features
- Single-Frequency Operation: Ensures high spectral purity with a fundamental mode structure
- High Side-Mode Suppression Ratio (SMSR): Provides an SMSR of ≥40 dB for minimal spectral noise
- Wavelength Stability: Tunable within ±0.06 nm/°C (temperature) and ±0.002 nm/mA (current) for precise control
- Multiple Power Ranges: Low-power (40–120 mW) and high-power (100–350 mW) options available
- Versatile Packaging Options: Available in CoS, TO-8, C-Mount, and TOSA with optional optical enhancements
- Reliable Performance: Passivated facets and monolithic DBR structure ensure long-term stability
Applications
- Atomic Spectroscopy: Optimized for metastable Helium (He*) spectroscopy and other atomic transitions
- Laser-Based Sensing: Suitable for high-precision interferometry and frequency stabilization
- Scientific Research: Ideal for laboratory experiments requiring narrow-linewidth, single-frequency lasers
- High-Resolution Metrology: Supports applications in precision measurement and spectroscopy
- Optical Communications: Can be used in specialized fiber-optic transmission and research systems
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Contact Supplier
How to order?
-
Ships from:
United States
-
Sold by:
-
On FindLight:
since 2019
Frequently Asked Questions
The 1083.33 nm DBR Laser Diode is primarily used in atomic spectroscopy, specifically for metastable helium (He*) applications. Its precise wavelength and single-frequency operation make it ideal for high-precision spectroscopic measurements.
The laser diode is available in multiple packaging formats, including Chip on Submount (CoS), 9MM TO-8, C-Mount, and Transmitter Optical Subassembly (TOSA). Additional configurations include Mode-Hop Free (MHF) and Virtual Point Source (VPS) Lens options.
The 1083.33 nm DBR Laser Diode is Spectroscopy Certified, ensuring that it remains within the He* transition range ±10°C from room temperature. The wavelength tuning rate is approximately 0.06 nm/°C for temperature and 0.002 nm/mA for current tuning, providing fine control for precise applications.
The laser diode is available in Low Power (40–120 mW) and High Power (100–350 mW) versions. The maximum operating current is 250 mA for Low Power and 550 mA for High Power, with a slope efficiency of 0.7 W/A.
This device is sensitive to electrostatic discharge (ESD) and must be handled with proper ESD protection, including a grounded work area and wrist straps. It should be stored in an antistatic container with all leads shorted together to prevent damage.