Frequently Asked Questions

The 730 nm DBR Laser Diode features a monolithic single-frequency GaAs-based design, providing a single spatial mode beam with high reliability due to passivated facets. It offers a nominal wavelength of 730 ± 0.6 nm, power output of 40–80 mW, and a high side mode suppression ratio (SMSR) of >40 dB.

This laser diode is widely used in biomedical imaging, molecular spectroscopy, atomic and quantum research, and optical sensing. Its narrow linewidth and high spectral purity make it ideal for precision measurements.

The 730 nm DBR Series is available in multiple package configurations, including Chip on Submount (CoS), TO-8, C-Mount, and Transmitter Optical Subassembly (TOSA). Additionally, a Mode-Hop Free (MHF) CoS version is available for applications requiring ultra-stable operation.

The wavelength shifts at a rate of 0.06 nm/°C with temperature and 0.002 nm/mA with current. For precise wavelength control, temperature stabilization is recommended via thermoelectric cooling (TEC).

The device is ESD-sensitive and must be handled in a grounded environment using an anti-static wrist strap. It should be stored in an antistatic container with all leads shorted together to prevent damage. Operation below the dew point should be avoided unless using a hermetically sealed package.

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