737 nm DBR Single-Frequency Laser Diode
Description
The 737 nm Distributed Bragg Reflector (DBR) Laser Diode from Photodigm is a high-performance edge-emitting laser designed for precision optical applications. Utilizing monolithic single-frequency GaAs-based laser technology, this device delivers a single spatial mode beam, ensuring excellent spectral purity and stability.
With a power output range of 40–80 mW, this laser diode offers high efficiency with a nominal slope efficiency of 0.8 W/A. The passivated facets enhance device reliability, while the narrow linewidth (500 kHz typical) and high side mode suppression ratio (-40 dB) ensure optimal performance in demanding applications.
Engineered for NV-center research, optical-pumped magnetometry, and quantum optics, this DBR laser diode provides precise wavelength control, with temperature and current tuning rates of 0.06 nm/°C and 0.002 nm/mA, respectively. It is available in various free-space package configurations, including Chip on Submount (CoS), TO-8, C-Mount, and TOSA.
For applications requiring mode-hop-free (MHF) operation, an MHF version is also available.
Ideal for research and industrial applications, the 737 nm DBR laser diode ensures superior performance, stability, and reliability.
737 nm DBR Single-Frequency Laser Diode
Specifications |
|
|---|---|
| Center Wavelength: | 0.737 ± .0.006 um |
| Output Power: | 40-80 mW |
| Operating Current, Max (CW & Pulsed): | 200 mA |
| Optical Power At Max Operating Current: | 80 mW |
| Storage Temperature: | 0 to +70 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +40 °C |
Features
- Single-Frequency DBR Laser: Monolithic GaAs-based edge-emitting laser with a fundamental mode structure
- High Optical Power: Output power ranges from 40 mW to 80 mW for versatile applications
- Excellent Spectral Purity: Narrow linewidth (500 kHz typical) with a high side mode suppression ratio (-40 dB)
- Stable and Reliable: Passivated facets enhance reliability and long-term performance
- Precision Tuning: Temperature tuning rate of 0.06 nm/°C and current tuning rate of 0.002 nm/mA for precise wavelength control
- Multiple Packaging Options: Available in Chip on Submount (CoS), TO-8, C-Mount, and TOSA packages
- Mode-Hop-Free (MHF) Option: Provides enhanced wavelength stability for critical applications
- High Polarization Extinction Ratio: ≥17 dB, ensuring polarization stability
Applications
- NV-Center Research: Ideal for quantum computing and single-photon emission studies
- Optical-Pumped Magnetometry: Used in high-precision magnetic field sensing applications
- Quantum Optics & Computing: Supports research in atomic, molecular, and optical physics (AMO)
- Spectroscopy & Metrology: Provides high-resolution spectral analysis for scientific applications
- Laser Cooling & Trapping: Enables atomic and molecular cooling techniques in experimental physics
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Contact Supplier
How to order?
-
Ships from:
United States
-
Sold by:
-
On FindLight:
since 2019
Frequently Asked Questions
The 737 nm DBR laser diode is commonly used in NV-center research and optically pumped magnetometry applications. It provides a single spatial mode beam with high spectral purity, making it ideal for quantum technology and precision measurement systems.
The 737 nm DBR laser diode is available in multiple packaging configurations, including Chip on Submount (CoS), C-Mount, TO-8, and Transmitter Optical Subassembly (TOSA). Mode-Hop Free (MHF) versions are also available for applications requiring enhanced wavelength stability.
The operating temperature range varies based on the component: 5°C to 70°C for the case and 5°C to 45°C for the laser chip. It is recommended to avoid operation below the dew point unless using a hermetically sealed package.
The 737 nm DBR laser diode is highly sensitive to ESD (Electrostatic Discharge). It must be handled in a grounded work area using an antistatic wrist strap and container. Leads should be shorted together when stored to prevent damage.
The wavelength exhibits temperature tuning at a rate of 0.06 nm/°C and current tuning at 0.002 nm/mA. These properties allow for fine wavelength adjustments in precision optical systems.