739 nm Distributed Bragg Reflector Laser Diode
Description
The Photodigm 739 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, single-frequency laser designed for applications requiring exceptional spectral purity and precision. Based on Photodigm’s advanced Gallium Arsenide (GaAs) monolithic laser technology, this edge-emitting diode provides a single spatial mode beam with excellent reliability due to its passivated facets.
Operating at 739 nm with a narrow linewidth of 500 kHz, this DBR laser is ideal for frequency-doubled Yb atomic spectroscopy, Raman spectroscopy, and other quantum optical applications. The temperature tuning rate of 0.06 nm/°C and current tuning rate of 0.002 nm/mA enable fine control over the output wavelength, making it well-suited for precision metrology.
The 739 nm DBR laser diode is available in multiple package configurations, including Chip on Submount (CoS), C-Mount, TO-8, and Transmitter Optical Subassembly (TOSA), with Mode-Hop Free (MHF) options for enhanced wavelength stability. Designed for researchers and engineers working in quantum optics and spectroscopy, this device delivers high power levels of up to 80 mW while maintaining superior side-mode suppression and polarization purity.
739 nm Distributed Bragg Reflector Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 0.739 ± .0.006 um |
| Output Power: | 40-80 mW |
| Operating Current, Max (CW & Pulsed): | 200 mA |
| Optical Power At Max Operating Current: | 80 mW |
| Storage Temperature: | 0 to +70 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 °C |
Features
- Single-Frequency Operation: Monolithic DBR structure ensures a stable, single-wavelength output
- High Optical Power: Output power up to 80 mW with a slope efficiency of 0.8 W/A
- Narrow Linewidth: Laser linewidth of 500 kHz, ideal for high-resolution spectroscopy
- Superior Spectral Purity: Side Mode Suppression Ratio (SMSR) exceeding 40 dB
- Excellent Wavelength Stability: Temperature tuning rate of 0.06 nm/°C and current tuning rate of 0.002 nm/mA
- Multiple Packaging Options: Available in CoS, C-Mount, TO-8, and TOSA configurations
- Reliable and Durable: Passivated facets ensure long-term performance and stability
Applications
- Atomic Spectroscopy: Supports Yb-based frequency-doubled atomic research and laser cooling
- Raman Spectroscopy: Provides high spectral resolution for molecular analysis
- Quantum Optics: Essential for quantum communication, sensing, and precision metrology
- Optical Pumping: Used in magneto-optical trapping and precision optical alignment
- Laser Interferometry: Ideal for high-precision measurements requiring stable single-frequency output
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
since 2019
Frequently Asked Questions
This laser diode is primarily used in frequency-doubled Ytterbium (Yb) atomic spectroscopy, Raman spectroscopy, and high-precision optical sensing.
The laser provides a power output ranging from 40 mW to 80 mW, depending on the operating conditions.
Yes, the wavelength can be adjusted using temperature tuning (0.06 nm/°C) and current tuning (0.002 nm/mA).
The laser has a narrow linewidth of 500 kHz and an SMSR greater than 40 dB, ensuring high spectral purity.
The laser is available in Chip on Submount (CoS), TO-8, C-Mount, and Transmitter Optical Subassembly (TOSA) configurations.