760 Single-Frequency DBR Laser Diode
Description
The 760 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 760 nm Series DBR devices are used in O2 sensing, LiDAR, and remote-sensing applications.
With mode-hop-free operation and high slope efficiency, these semiconductor laser diodes ensure superior spectral performance, making them ideal for use in quantum technologies, metrology, and space-based navigation systems. The availability of Virtual Point Source (VPS) lenses further enhances beam quality and focusing capabilities, extending their applicability to biomedical imaging, scientific research, and material characterization. Whether employed in industrial, aerospace, or research settings, the 760 nm DBR Series laser diodes delivers exceptional stability and power efficiency, meeting the stringent demands of next-generation optical systems.
760 Single-Frequency DBR Laser Diode
Specifications |
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Center Wavelength: | 0.760 ± .0006 um |
Output Power: | 40-60 mW |
Operating Current, Max (CW & Pulsed): | 150 mA |
Optical Power At Max Operating Current: | 60 mW |
Storage Temperature: | 0 to +70 °C |
Nominal Laser Linewidth @ LIV Current: | 500 kHz |
Temperature Tuning Rate: | 0.06 nm/ºC |
Features
- Available in several package styles
- Pulsed operation for spectral stability at short pulse lengths
- High power for CW applications
- High slope efficiency
- Mode-Hop Free options
- Virtual Point Sources (VPS) Lens availability
Applications
- Biomedical, Spectroscopy
- Quantum, Metrology
- Scientific Research
- Space & Navigation
- Material CharacterizationRemote Sensing
For pricing, technical or any other questions please contact the supplier
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- No markups, no fees
- Direct contact with supplier
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Ships from:
United States
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Sold by:
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On FindLight:
since 2019
Frequently Asked Questions
The 760 nm DBR Laser Diode is widely used in applications such as oxygen (O₂) sensing, LiDAR, and remote sensing. Its single-frequency operation and high spectral purity make it ideal for precision measurements and scientific research.
The 760 nm DBR Laser Diode is available in multiple packaging options, including Chip on Submount (CoS), TO-8, C-Mount, and Transmitter Optical Subassembly (TOSA). Additional free-space package add-ons such as Mode-Hop Free (MHF) and Virtual Point Source (VPS) Lens are also available.
The laser exhibits a temperature tuning rate of approximately 0.06 nm/°C, meaning that its wavelength shifts slightly with temperature changes. For precise operation, temperature control using a Thermoelectric Cooler (TEC) is recommended.
This laser diode is sensitive to electrostatic discharge (ESD) and should be handled in an ESD-safe environment using grounded workstations and wrist straps. It should always be stored in an antistatic container with leads shorted together to prevent damage.
The 760 nm DBR Laser Diode has a high Side Mode Suppression Ratio (SMSR) of -40 dB, ensuring single-frequency operation with minimal interference from unwanted modes.