770.108 Single-Frequency DBR Laser Diode

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Specifications

Center Wavelength: 0.77 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 100 mW
Storage Temperature: 0 to +70 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 °C
Laser Forward Voltage: 2 V
Beam Divergence @ FWHM (θ|| X θ⊥): 6 x 28 º
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Features


  • Single-Frequency Operation: Provides a stable, narrow-linewidth output with minimal mode hopping

  • High Spectral Purity: Side mode suppression ratio (SMSR) of >40 dB ensures precise frequency selection

  • Optimized for Potassium Spectroscopy: Wavelength aligned to the K D1 transition at 770.108 nm (±0.6 nm)

  • Narrow Linewidth: 500 kHz linewidth for high-resolution spectroscopy and sensing.

  • High Output Power: Power range from 40 mW to 100 mW with a slope efficiency of 0.6 W/A

  • Temperature and Current Tuning: Tuning coefficients of 0.06 nm/°C (temperature) and 0.002 nm/mA (current) for precise wavelength control

  • Multiple Packaging Options: Available in CoS, TO-8, C-Mount, and TOSA configurations for flexible integration

  • Passivated Facets for Longevity: Enhanced reliability with reduced facet degradation over time

  • Electrostatic Discharge (ESD) Protection: Requires proper handling with anti-static precautions

Applications


  • Atomic Spectroscopy: Precision spectroscopy for potassium (K) D1 transitions

  • Quantum Optics: Used in quantum communication, computing, and atomic cooling applications

  • Raman Spectroscopy: Ideal for high-resolution Raman analysis in scientific research

  • Optical Metrology: Suitable for precision measurement applications requiring stable laser sources

  • Cold Atom Experiments: Used in trapping and cooling of potassium atoms in quantum physics research