778.105 Single-Frequency DBR Laser Diode
Description
The 778.105 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, edge-emitting laser diode that utilizes advanced monolithic Gallium Arsenide (GaAs) technology. This laser diode is designed specifically for precision atomic spectroscopy, especially in rubidium-based (Rb) applications, offering unparalleled performance and reliability. It delivers a single spatial mode beam that ensures a consistent and stable output, ideal for high-precision measurements in scientific and research environments.
This DBR laser diode is equipped with passivated facets, which enhance its durability and reliability, ensuring long-lasting performance in demanding applications. It is spectroscopically certified to guarantee that it hits the rubidium two-photon transition (2PT) with a tolerance of ±10°C from room temperature, making it highly accurate and dependable for rubidium spectroscopy.
With a power range of 80–180 mW and a slope efficiency of 0.85 W/A, this laser diode offers high output and excellent efficiency. The 778.105 nm DBR laser is designed with tunability in mind, allowing precise adjustments in both temperature and current, offering flexibility for various experimental setups.
Additionally, this laser diode is the perfect solution for research applications in atomic physics, quantum optics, and other high-precision fields. Whether in a laboratory, research environment, or advanced analytical system, the 778.105 nm DBR laser diode stands out as a versatile and reliable component for spectroscopy and high-precision measurement systems.
778.105 Single-Frequency DBR Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 0.778 ± .0.006 um |
| Output Power: | 80-180 mW |
| Operating Current, Max (CW & Pulsed): | 250 mA |
| Optical Power At Max Operating Current: | 180 mW |
| Storage Temperature: | 0 to +70 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
Features
- Single Spatial Mode Beam: Ensures high precision and reliability in spectroscopy applications
- Passivated Facets: Guarantees enhanced device longevity and durability
- Spectroscopy Certified: Guaranteed performance at the rubidium two-photon transition (±10°C from room temperature)
- High Power Output: Power range of 80–180 mW, providing strong, stable output
- Temperature and Current Tunable: Offers precise control for various experimental setups
- Monolithic GaAs Technology: Ensures excellent beam quality and reliability
Applications
- Atomic Spectroscopy: Ideal for rubidium-based (Rb) atomic spectroscopy applications
- Precision Measurement Systems: Perfect for systems requiring stable and high-output laser sources
- Research & Development: Essential for experimental setups in quantum optics and atomic physics
- High-Precision Analytical Systems: Suitable for systems that require accurate wavelength control and stability
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Ships from:
United States
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On FindLight:
since 2019
Frequently Asked Questions
The 778.105 nm DBR Laser Diode is primarily used in atomic spectroscopy for rubidium-based (Rb) applications. It is spectroscopically certified to hit the rubidium two-photon transition (2PT) with high accuracy, making it ideal for precise measurements in atomic physics and quantum optics experiments.
The nominal wavelength of the 778.105 nm DBR Laser Diode is 778.105 nm ± 0.6 nm. This precise wavelength is optimal for rubidium spectroscopy, ensuring excellent accuracy for applications requiring specific wavelength handling.
The 778.105 nm DBR Laser Diode can achieve a maximum optical power output of 180 mW at a maximum operating current of 250 mA. This high-power output ensures sufficient intensity for demanding applications in spectroscopy and other scientific experiments.
The 778.105 nm DBR Laser Diode is designed to operate stably within a temperature range of 5°C to 70°C at the case level and 5°C to 45°C at the laser chip. The device is also spectroscopically certified to work accurately with rubidium spectroscopy within ±10°C of room temperature, ensuring reliable performance in a range of environments.
Key features include: High Power Output: Provides up to 180 mW optical power for high-performance applications. Single Spatial Mode: Ensures beam consistency for precise measurements. Passivated Facets: Enhances reliability and durability. Spectroscopy Certified: Guaranteed to meet the rubidium two-photon transition (2PT) specifications within a ±10°C range from room temperature. Excellent Slope Efficiency: Nominal slope efficiency of 0.85 W/A, ensuring high efficiency.