780.241 Single-Frequency DBR Laser Diode

Specifications

Center Wavelength: 0.78 um
Output Power: 10 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +45 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 nm/°C
Beam Divergence @ FWHM (θ|| X θ⊥): 6 x 28 º
Laser Forward Voltage: 2 V
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Features


  • Single Spatial Mode Beam: Ensures stable and focused output for precise measurements

  • Passivated Facets: Provides durability and reliability for long-term use

  • Spectroscopy Certified: Guaranteed to hit the rubidium D2 transition ±10°C from room temperature

  • High Slope Efficiency: Up to 0.9 W/A for low-power models and 0.85 W/A for high-power models, ensuring efficient energy conversion

  • Multiple Power Options: Available in low, medium, and high-power ranges (10–180 mW) for various application needs

  • Low Threshold Current: As low as 30 mA for efficient performance and minimal power loss

Applications


  • Atomic Spectroscopy: Ideal for rubidium-based atomic physics applications, including spectroscopy

  • Quantum Optics: Used in experiments requiring high precision and stability, such as quantum communications and entanglement studies

  • Laboratory Research: Essential for advanced laser research in controlled environments where spectral accuracy is critical

  • Precision Measurement Systems: Suitable for high-accuracy measurements where wavelength stability is key