780.241 Single-Frequency DBR Laser Diode
Description
The 780.241 nm Distributed Bragg Reflector (DBR) Laser Diode from Photodigm is engineered for high-precision applications in atomic spectroscopy, particularly for rubidium (Rb) atom-based experiments. Utilizing Photodigm's advanced monolithic single-frequency Gallium Arsenide (GaAs) technology, this laser provides a single spatial mode beam that is stable, focused, and optimized for rubidium D2 transition detection. With passivated facets, the diode guarantees reliable and durable performance under various conditions, ensuring long-lasting functionality.
This laser diode is Spectroscopy Certified, meaning it is guaranteed to hit the rubidium D2 transition within a temperature range of ±10°C from room temperature, which is critical for accurate and consistent spectroscopic measurements. The 780.241 nm DBR series is available in multiple power outputs ranging from 10 mW to 180 mW, with three power configurations: low, medium, and high. It features low threshold currents, with typical values of 30 mA for low-power models, and high slope efficiencies (up to 0.9 W/A for low-power models). These features make it an ideal solution for demanding applications requiring high precision, such as quantum optics, laser-based measurement systems, and advanced laboratory research.
With its robust design and fine-tuned performance specifications, the 780.241 nm DBR Laser Diode ensures exceptional performance for researchers and engineers in both scientific and industrial settings.
780.241 Single-Frequency DBR Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 0.780 ± .0.006 um |
| Output Power: | 10-180 mW |
| Operating Current, Max (CW & Pulsed): | 250 mA |
| Optical Power At Max Operating Current: | 180 mW |
| Storage Temperature: | 0 to +45 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 nm/°C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
| Laser Forward Voltage: | 2 V |
Features
- Single Spatial Mode Beam: Ensures stable and focused output for precise measurements
- Passivated Facets: Provides durability and reliability for long-term use
- Spectroscopy Certified: Guaranteed to hit the rubidium D2 transition ±10°C from room temperature
- High Slope Efficiency: Up to 0.9 W/A for low-power models and 0.85 W/A for high-power models, ensuring efficient energy conversion
- Multiple Power Options: Available in low, medium, and high-power ranges (10–180 mW) for various application needs
- Low Threshold Current: As low as 30 mA for efficient performance and minimal power loss
Applications
- Atomic Spectroscopy: Ideal for rubidium-based atomic physics applications, including spectroscopy
- Quantum Optics: Used in experiments requiring high precision and stability, such as quantum communications and entanglement studies
- Laboratory Research: Essential for advanced laser research in controlled environments where spectral accuracy is critical
- Precision Measurement Systems: Suitable for high-accuracy measurements where wavelength stability is key
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United States
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On FindLight:
since 2019
Frequently Asked Questions
The 780.241 nm DBR Laser Diode is ideal for atomic spectroscopy, especially for rubidium-based (Rb) applications. It is also well-suited for quantum optics, laboratory research requiring high spectral accuracy, and precision measurement systems where stable and reliable laser output is crucial.
The 780.241 nm DBR Laser Diode has a nominal wavelength of 780.241 nm with a tolerance of ±0.6 nm. The device is spectroscopically certified to ensure that it hits the rubidium D2 transition with a tolerance of ±10°C from room temperature, making it highly accurate for atomic spectroscopy.
The 780.241 nm DBR Laser Diode is available in three power configurations: Low Power (10-30 mW), Medium Power (40-80 mW), and High Power (80-180 mW). These options allow for flexible use in various applications, depending on the required power output.
The typical threshold current for the 780.241 nm DBR Laser Diode varies by power configuration: Low Power (30 mA), Medium Power (40 mA), and High Power (60 mA). This low threshold current ensures efficient operation, particularly for low-power configurations, with minimal energy consumption.
The 780.241 nm DBR Laser Diode has the following temperature specifications: Operating Temperature (Case) ranges from 5°C to 70°C, and Operating Temperature (Laser Chip) ranges from 5°C to 45°C. This range ensures the diode operates reliably across various environments while maintaining optimal performance.