785 Single-Frequency DBR Laser Diode
Description
The 785 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance edge-emitting laser designed for applications requiring a single-frequency, stable, and reliable optical source. Built using Photodigm’s advanced monolithic GaAs laser technology, this diode provides a single spatial mode beam and features passivated facets for enhanced reliability.
With a nominal wavelength of 785 nm (±0.6 nm) and a high side mode suppression ratio (SMSR), this DBR laser diode is optimized for Raman spectroscopy, precision metrology, and scientific research applications. It offers low noise operation, excellent wavelength stability, and precise tuning capabilities, making it a preferred choice for demanding optical systems.
Available in multiple power configurations, the low-power version operates within a range of 40–80 mW, while the high-power variant delivers 80–180 mW. With its robust design, hermetically sealed package options, and support for add-ons such as Mode-Hop Free (MHF) and Virtual Point Source (VPS) lenses, the 785 nm DBR laser diode ensures reliable performance across a wide temperature range.
785 Single-Frequency DBR Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 0.785 ± .0.006 um |
| Output Power: | 80-180 mW |
| Operating Current, Max (CW & Pulsed): | 250 mA |
| Optical Power At Max Operating Current: | 180 mW |
| Storage Temperature: | 0 to +70 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
| Laser Forward Voltage: | 2 V |
Features
- Single Spatial Mode Beam: Ensures high precision and reliability in spectroscopy applications
- Passivated Facets: Guarantees enhanced device longevity and durability
- Spectroscopy Certified: Guaranteed performance at the rubidium two-photon transition (±10°C from room temperature)
- High Power Output: Power range of 80–180 mW, providing strong, stable output
- Temperature and Current Tunable: Offers precise control for various experimental setups
- Monolithic GaAs Technology: Ensures excellent beam quality and reliability
Applications
- Atomic Spectroscopy: Ideal for rubidium-based (Rb) atomic spectroscopy applications
- Precision Measurement Systems: Perfect for systems requiring stable and high-output laser sources
- Research & Development: Essential for experimental setups in quantum optics and atomic physics
- High-Precision Analytical Systems: Suitable for systems that require accurate wavelength control and stability
For pricing, technical or any other questions please contact the supplier
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
since 2019
Frequently Asked Questions
The 785 nm DBR laser diode offers a single spatial mode beam with a narrow linewidth, ensuring high precision and stability for spectroscopy applications. Its monolithic GaAs construction and passivated facets enhance reliability, making it an excellent choice for atomic and molecular spectroscopy.
The laser diode features a distributed Bragg reflector (DBR) design that provides intrinsic wavelength stability. Additionally, temperature and current tuning allow for fine control, ensuring stable operation within ±0.6 nm of the nominal 785 nm wavelength.
The laser diode is available in two power configurations: low power (40–80 mW) and high power (80–180 mW). The high-power version is ideal for applications requiring stronger optical output, while the low-power version is suitable for more sensitive experimental setups.
The 785 nm DBR laser diode is available as a chip on submount (CoS) and with additional package options, including Mode-Hop Free (MHF) CoS, Virtual Point Source (VPS) Lens CoS, TO-8, C-Mount, and Transmitter Optical Subassembly (TOSA) packages. These options provide flexibility for integration into various systems.