794.978 Single-Frequency DBR Laser Diode
Description
The Photodigm 794.978 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, monolithic, single-frequency laser designed for precision applications in atomic spectroscopy, rubidium-based quantum sensing, and optical metrology. Engineered with Gallium Arsenide (GaAs) technology, it delivers a single spatial mode beam with passivated facets for enhanced reliability.
This DBR laser diode ensures superior spectral stability, offering a nominal wavelength of 794.978 nm ± 0.6 nm, making it ideal for applications requiring high coherence and low noise. It supports multiple power levels, ranging from 10 mW to 180 mW, with a mode-hop-free (MHF) option for enhanced stability. Additionally, the temperature tuning rate of 0.06 nm/°C ensures precise wavelength control.
Available in various packaging options, including Chip on Submount (CoS), TO-8, and Transmitter Optical Subassembly (TOSA), this laser diode is designed for easy integration into demanding optical systems. Spectroscopy Certified, it guarantees wavelength accuracy within ±10°C of room temperature, ensuring consistent performance in laboratory and industrial environments.
794.978 Single-Frequency DBR Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 0.794 ± .0.006 um |
| Output Power: | 80-180 mW |
| Operating Current, Max (CW & Pulsed): | 250 mA |
| Optical Power At Max Operating Current: | 180 mA |
| Storage Temperature: | 0 to +75 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
| Laser Forward Voltage: | 2 V |
Features
- Single Spatial Mode Beam: Ensures high precision and reliability in spectroscopy applications
- Passivated Facets: Guarantees enhanced device longevity and durability
- Spectroscopy Certified: Guaranteed performance at the rubidium two-photon transition (±10°C from room temperature)
- High Power Output: Power range of 80–180 mW, providing strong, stable output
- Temperature and Current Tunable: Offers precise control for various experimental setups
- Monolithic GaAs Technology: Ensures excellent beam quality and reliability
Applications
- Atomic Spectroscopy: Ideal for rubidium-based (Rb) atomic spectroscopy applications
- Precision Measurement Systems: Perfect for systems requiring stable and high-output laser sources
- Research & Development: Essential for experimental setups in quantum optics and atomic physics
- High-Precision Analytical Systems: Suitable for systems that require accurate wavelength control and stability
For pricing, technical or any other questions please contact the supplier
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
since 2019
Frequently Asked Questions
The 794.978 nm DBR laser diode is primarily used in rubidium-based atomic spectroscopy and quantum sensing applications. Its precise wavelength control makes it ideal for high-precision measurements in research and industrial settings.
The laser utilizes monolithic GaAs DBR technology, providing a single-frequency, single-spatial-mode beam. It is Spectroscopy Certified, guaranteeing operation at the rubidium D1 transition (±10°C from room temperature), ensuring minimal drift and precise wavelength control.
The 794.978 nm DBR series offers different power ranges based on operating current. Low-power versions operate between 10 to 30 mW, medium-power versions range from 40 to 80 mW, and high-power models deliver 80 to 180 mW of optical output.
The wavelength can be tuned through temperature and current adjustments. Temperature tuning occurs at a rate of 0.06 nm per degree Celsius, while current tuning allows for fine adjustments at 0.002 nm per milliampere. This flexibility enables precise control for various spectroscopy and experimental applications.
The 794.978 nm DBR Laser Diode is available in multiple package configurations to suit different integration requirements. Options include Chip on Submount (CoS), CoS with Mode-Hop Free (MHF) design, CoS with Virtual Point Source (VPS) lens, 9MM TO-8 package, C-Mount, and Transmitter Optical Subassembly (TOSA).